JP2010092917A5 - - Google Patents

Download PDF

Info

Publication number
JP2010092917A5
JP2010092917A5 JP2008258586A JP2008258586A JP2010092917A5 JP 2010092917 A5 JP2010092917 A5 JP 2010092917A5 JP 2008258586 A JP2008258586 A JP 2008258586A JP 2008258586 A JP2008258586 A JP 2008258586A JP 2010092917 A5 JP2010092917 A5 JP 2010092917A5
Authority
JP
Japan
Prior art keywords
layer
group
semiconductor device
buffer layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008258586A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010092917A (ja
JP5109912B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008258586A priority Critical patent/JP5109912B2/ja
Priority claimed from JP2008258586A external-priority patent/JP5109912B2/ja
Publication of JP2010092917A publication Critical patent/JP2010092917A/ja
Publication of JP2010092917A5 publication Critical patent/JP2010092917A5/ja
Application granted granted Critical
Publication of JP5109912B2 publication Critical patent/JP5109912B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008258586A 2008-10-03 2008-10-03 半導体装置の製造方法、半導体装置 Expired - Fee Related JP5109912B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008258586A JP5109912B2 (ja) 2008-10-03 2008-10-03 半導体装置の製造方法、半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008258586A JP5109912B2 (ja) 2008-10-03 2008-10-03 半導体装置の製造方法、半導体装置

Publications (3)

Publication Number Publication Date
JP2010092917A JP2010092917A (ja) 2010-04-22
JP2010092917A5 true JP2010092917A5 (enExample) 2011-10-27
JP5109912B2 JP5109912B2 (ja) 2012-12-26

Family

ID=42255390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008258586A Expired - Fee Related JP5109912B2 (ja) 2008-10-03 2008-10-03 半導体装置の製造方法、半導体装置

Country Status (1)

Country Link
JP (1) JP5109912B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5206985B2 (ja) * 2009-05-28 2013-06-12 日立電線株式会社 立方晶型窒化物半導体ウェハ及びその製造方法、並びに立方晶型窒化物半導体自立基板の製造方法
US8536022B2 (en) * 2010-05-19 2013-09-17 Koninklijke Philips N.V. Method of growing composite substrate using a relaxed strained layer
FR3143044A1 (fr) * 2022-12-08 2024-06-14 Soitec Structure comprenant une couche d’arseniure de bore de haute conductivite thermique et procede de fabrication
CN118186577A (zh) * 2024-03-15 2024-06-14 华厦半导体(宁波)有限公司 一种氮化镓外延结构及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305322A (ja) * 2001-04-06 2002-10-18 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP4766642B2 (ja) * 2001-09-06 2011-09-07 コバレントマテリアル株式会社 ＳｉＣ半導体とＳｉＣエピタキシャル成長方法
JP4809669B2 (ja) * 2005-03-25 2011-11-09 学校法人同志社 積層構造体、その形成方法および半導体素子

Similar Documents

Publication Publication Date Title
WO2010151857A3 (en) Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
JP2007528593A5 (enExample)
TW200644234A (en) Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction
TW200725753A (en) Method for fabricating silicon nitride spacer structures
JP2006019727A5 (enExample)
JP2013534052A5 (enExample)
JP2008511171A5 (enExample)
TW200816473A (en) A heterojunction bipolar transistor (HBT) with periodic multilayer base
JP2005317978A5 (enExample)
JP2008505834A5 (enExample)
JP2009164158A5 (enExample)
WO2009050871A1 (ja) 半導体装置およびその製造方法
JP2009004736A5 (enExample)
JP2010520620A5 (enExample)
TW200703518A (en) Integration process for fabricating stressed transistor structure
JP2008511173A5 (enExample)
TW200633022A (en) Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
JP2014236093A5 (enExample)
JP2012146838A5 (enExample)
TW200735348A (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
JP2006210555A5 (enExample)
EP2031642A3 (en) Group III nitride semiconductor and a manufacturing method thereof
CN103489898A (zh) 半导体器件以及在该半导体器件中使用的超晶格层
WO2009004889A1 (ja) 薄膜シリコンウェーハ及びその作製法
JP2010092917A5 (enExample)