JP5109912B2 - 半導体装置の製造方法、半導体装置 - Google Patents

半導体装置の製造方法、半導体装置 Download PDF

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Publication number
JP5109912B2
JP5109912B2 JP2008258586A JP2008258586A JP5109912B2 JP 5109912 B2 JP5109912 B2 JP 5109912B2 JP 2008258586 A JP2008258586 A JP 2008258586A JP 2008258586 A JP2008258586 A JP 2008258586A JP 5109912 B2 JP5109912 B2 JP 5109912B2
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buffer layer
group
semiconductor device
lattice constant
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JP2010092917A (ja
JP2010092917A5 (enExample
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浩行 島田
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Seiko Epson Corp
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Seiko Epson Corp
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JP2008258586A 2008-10-03 2008-10-03 半導体装置の製造方法、半導体装置 Expired - Fee Related JP5109912B2 (ja)

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JP2010092917A JP2010092917A (ja) 2010-04-22
JP2010092917A5 JP2010092917A5 (enExample) 2011-10-27
JP5109912B2 true JP5109912B2 (ja) 2012-12-26

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5206985B2 (ja) * 2009-05-28 2013-06-12 日立電線株式会社 立方晶型窒化物半導体ウェハ及びその製造方法、並びに立方晶型窒化物半導体自立基板の製造方法
US8536022B2 (en) * 2010-05-19 2013-09-17 Koninklijke Philips N.V. Method of growing composite substrate using a relaxed strained layer
FR3143044A1 (fr) * 2022-12-08 2024-06-14 Soitec Structure comprenant une couche d’arseniure de bore de haute conductivite thermique et procede de fabrication
CN118186577A (zh) * 2024-03-15 2024-06-14 华厦半导体(宁波)有限公司 一种氮化镓外延结构及其制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305322A (ja) * 2001-04-06 2002-10-18 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP4766642B2 (ja) * 2001-09-06 2011-09-07 コバレントマテリアル株式会社 ＳｉＣ半導体とＳｉＣエピタキシャル成長方法
JP4809669B2 (ja) * 2005-03-25 2011-11-09 学校法人同志社 積層構造体、その形成方法および半導体素子

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