JP2010062262A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2010062262A JP2010062262A JP2008225031A JP2008225031A JP2010062262A JP 2010062262 A JP2010062262 A JP 2010062262A JP 2008225031 A JP2008225031 A JP 2008225031A JP 2008225031 A JP2008225031 A JP 2008225031A JP 2010062262 A JP2010062262 A JP 2010062262A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 215
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 63
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 53
- 239000010408 film Substances 0.000 claims description 304
- 239000000758 substrate Substances 0.000 claims description 124
- 239000012535 impurity Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 9
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- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 13
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- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
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- 239000007789 gas Substances 0.000 description 7
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- 230000001965 increasing effect Effects 0.000 description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000013316 zoning Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008225031A JP2010062262A (ja) | 2008-09-02 | 2008-09-02 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008225031A JP2010062262A (ja) | 2008-09-02 | 2008-09-02 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010062262A true JP2010062262A (ja) | 2010-03-18 |
| JP2010062262A5 JP2010062262A5 (enrdf_load_stackoverflow) | 2011-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008225031A Pending JP2010062262A (ja) | 2008-09-02 | 2008-09-02 | 半導体装置およびその製造方法 |
Country Status (1)
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|---|---|
| JP (1) | JP2010062262A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011104850A1 (ja) * | 2010-02-25 | 2011-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2011243865A (ja) * | 2010-05-20 | 2011-12-01 | Fuji Electric Co Ltd | 超接合半導体装置の製造方法 |
| JP2012009522A (ja) * | 2010-06-23 | 2012-01-12 | Mitsubishi Electric Corp | 電力用半導体装置 |
| JP2013012707A (ja) * | 2011-05-27 | 2013-01-17 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
| JP2013070084A (ja) * | 2012-12-07 | 2013-04-18 | Mitsubishi Electric Corp | 電力用半導体装置 |
| CN103247682A (zh) * | 2012-02-09 | 2013-08-14 | 瑞萨电子株式会社 | 半导体器件 |
| WO2013140621A1 (ja) * | 2012-03-23 | 2013-09-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN111584635A (zh) * | 2020-05-13 | 2020-08-25 | 杰华特微电子（杭州）有限公司 | 半导体器件 |
| US11894457B2 (en) | 2020-05-09 | 2024-02-06 | Joulwatt Technology Co., Ltd. | Semiconductor device and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271679A (ja) * | 1989-04-13 | 1990-11-06 | Fuji Electric Co Ltd | 伝導度変調型ｍｏｓｆｅｔ |
| JP2006237553A (ja) * | 2004-09-02 | 2006-09-07 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
| JP2008153454A (ja) * | 2006-12-18 | 2008-07-03 | Fuji Electric Device Technology Co Ltd | Ｍｏｓ型半導体装置の製造方法 |
| JP2008532257A (ja) * | 2005-03-03 | 2008-08-14 | 富士電機デバイステクノロジー株式会社 | 半導体装置およびその製造方法 |
| JP2009004746A (ja) * | 2007-06-25 | 2009-01-08 | Sharp Corp | 補助ゲート付き薄膜ｓｏｉ高電圧トランジスタ及びその製造方法 |
-
2008
- 2008-09-02 JP JP2008225031A patent/JP2010062262A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271679A (ja) * | 1989-04-13 | 1990-11-06 | Fuji Electric Co Ltd | 伝導度変調型ｍｏｓｆｅｔ |
| JP2006237553A (ja) * | 2004-09-02 | 2006-09-07 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
| JP2008532257A (ja) * | 2005-03-03 | 2008-08-14 | 富士電機デバイステクノロジー株式会社 | 半導体装置およびその製造方法 |
| JP2008153454A (ja) * | 2006-12-18 | 2008-07-03 | Fuji Electric Device Technology Co Ltd | Ｍｏｓ型半導体装置の製造方法 |
| JP2009004746A (ja) * | 2007-06-25 | 2009-01-08 | Sharp Corp | 補助ゲート付き薄膜ｓｏｉ高電圧トランジスタ及びその製造方法 |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8587087B2 (en) | 2010-02-25 | 2013-11-19 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
| WO2011104850A1 (ja) * | 2010-02-25 | 2011-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2011243865A (ja) * | 2010-05-20 | 2011-12-01 | Fuji Electric Co Ltd | 超接合半導体装置の製造方法 |
| US8829600B2 (en) | 2010-06-23 | 2014-09-09 | Mitsubishi Electric Corporation | Power semiconductor device |
| JP2012009522A (ja) * | 2010-06-23 | 2012-01-12 | Mitsubishi Electric Corp | 電力用半導体装置 |
| US9257542B2 (en) | 2010-06-23 | 2016-02-09 | Mitsubishi Electric Corporation | Power semiconductor device with resistance control structure |
| KR101256377B1 (ko) | 2010-06-23 | 2013-04-25 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체장치 |
| US8421145B2 (en) | 2010-06-23 | 2013-04-16 | Mitsubishi Electric Corporation | Power semiconductor device |
| US9166017B2 (en) | 2011-05-27 | 2015-10-20 | Renesas Electronics Corporation | Method of manufacturing semiconductor device and semiconductor device |
| JP2013012707A (ja) * | 2011-05-27 | 2013-01-17 | Renesas Electronics Corp | 半導体装置の製造方法および半導体装置 |
| US8741699B2 (en) | 2011-05-27 | 2014-06-03 | Renesas Electronics Corporation | Method of manufacturing semiconductor device and semiconductor device |
| JP2013179251A (ja) * | 2012-02-09 | 2013-09-09 | Renesas Electronics Corp | 半導体装置 |
| CN103247682A (zh) * | 2012-02-09 | 2013-08-14 | 瑞萨电子株式会社 | 半导体器件 |
| WO2013140621A1 (ja) * | 2012-03-23 | 2013-09-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2013070084A (ja) * | 2012-12-07 | 2013-04-18 | Mitsubishi Electric Corp | 電力用半導体装置 |
| US11894457B2 (en) | 2020-05-09 | 2024-02-06 | Joulwatt Technology Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN111584635A (zh) * | 2020-05-13 | 2020-08-25 | 杰华特微电子（杭州）有限公司 | 半导体器件 |
| CN111584635B (zh) * | 2020-05-13 | 2022-09-20 | 杰华特微电子股份有限公司 | 半导体器件 |
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