JP2010062262A5 - - Google Patents
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- Publication number
- JP2010062262A5 JP2010062262A5 JP2008225031A JP2008225031A JP2010062262A5 JP 2010062262 A5 JP2010062262 A5 JP 2010062262A5 JP 2008225031 A JP2008225031 A JP 2008225031A JP 2008225031 A JP2008225031 A JP 2008225031A JP 2010062262 A5 JP2010062262 A5 JP 2010062262A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- igbt
- semiconductor device
- insulating films
- channel formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008225031A JP2010062262A (ja) | 2008-09-02 | 2008-09-02 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008225031A JP2010062262A (ja) | 2008-09-02 | 2008-09-02 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010062262A JP2010062262A (ja) | 2010-03-18 |
| JP2010062262A5 true JP2010062262A5 (enrdf_load_stackoverflow) | 2011-09-29 |
Family
ID=42188768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008225031A Pending JP2010062262A (ja) | 2008-09-02 | 2008-09-02 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010062262A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5587399B2 (ja) * | 2010-02-25 | 2014-09-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP5560897B2 (ja) * | 2010-05-20 | 2014-07-30 | 富士電機株式会社 | 超接合半導体装置の製造方法 |
| JP5361808B2 (ja) | 2010-06-23 | 2013-12-04 | 三菱電機株式会社 | 電力用半導体装置 |
| JP5816570B2 (ja) * | 2011-05-27 | 2015-11-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP2013179251A (ja) * | 2012-02-09 | 2013-09-09 | Renesas Electronics Corp | 半導体装置 |
| WO2013140621A1 (ja) * | 2012-03-23 | 2013-09-26 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP5546612B2 (ja) * | 2012-12-07 | 2014-07-09 | 三菱電機株式会社 | 電力用半導体装置 |
| CN111584635B (zh) * | 2020-05-13 | 2022-09-20 | 杰华特微电子股份有限公司 | 半导体器件 |
| US11894457B2 (en) | 2020-05-09 | 2024-02-06 | Joulwatt Technology Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271679A (ja) * | 1989-04-13 | 1990-11-06 | Fuji Electric Co Ltd | 伝導度変調型ｍｏｓｆｅｔ |
| JP5114832B2 (ja) * | 2004-09-02 | 2013-01-09 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| WO2006093309A1 (en) * | 2005-03-03 | 2006-09-08 | Fuji Electric Holdings Co., Ltd. | Semiconductor device and the method of manufacturing the same |
| JP2008153454A (ja) * | 2006-12-18 | 2008-07-03 | Fuji Electric Device Technology Co Ltd | Ｍｏｓ型半導体装置の製造方法 |
| US7713821B2 (en) * | 2007-06-25 | 2010-05-11 | Sharp Laboratories Of America, Inc. | Thin silicon-on-insulator high voltage auxiliary gated transistor |
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2008
- 2008-09-02 JP JP2008225031A patent/JP2010062262A/ja active Pending