JP2010016261A5 - - Google Patents

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Publication number
JP2010016261A5
JP2010016261A5 JP2008176167A JP2008176167A JP2010016261A5 JP 2010016261 A5 JP2010016261 A5 JP 2010016261A5 JP 2008176167 A JP2008176167 A JP 2008176167A JP 2008176167 A JP2008176167 A JP 2008176167A JP 2010016261 A5 JP2010016261 A5 JP 2010016261A5
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JP
Japan
Prior art keywords
electrode
nitride semiconductor
layer
type nitride
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008176167A
Other languages
English (en)
Japanese (ja)
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JP2010016261A (ja
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Publication date
Application filed filed Critical
Priority to JP2008176167A priority Critical patent/JP2010016261A/ja
Priority claimed from JP2008176167A external-priority patent/JP2010016261A/ja
Publication of JP2010016261A publication Critical patent/JP2010016261A/ja
Publication of JP2010016261A5 publication Critical patent/JP2010016261A5/ja
Pending legal-status Critical Current

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JP2008176167A 2008-07-04 2008-07-04 窒化物半導体レーザ素子 Pending JP2010016261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008176167A JP2010016261A (ja) 2008-07-04 2008-07-04 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008176167A JP2010016261A (ja) 2008-07-04 2008-07-04 窒化物半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2010016261A JP2010016261A (ja) 2010-01-21
JP2010016261A5 true JP2010016261A5 (enrdf_load_stackoverflow) 2011-01-20

Family

ID=41702070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008176167A Pending JP2010016261A (ja) 2008-07-04 2008-07-04 窒化物半導体レーザ素子

Country Status (1)

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JP (1) JP2010016261A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7856040B2 (en) * 2008-09-24 2010-12-21 Palo Alto Research Center Incorporated Semiconductor light emitting devices with non-epitaxial upper cladding
WO2011105136A1 (ja) * 2010-02-25 2011-09-01 三洋電機株式会社 半導体レーザ装置及び光装置
JP5742325B2 (ja) * 2010-03-25 2015-07-01 日亜化学工業株式会社 半導体レーザ素子及びその製造方法
WO2012127778A1 (ja) * 2011-03-24 2012-09-27 パナソニック株式会社 窒化物半導体発光素子
JP7185867B2 (ja) * 2018-05-18 2022-12-08 旭化成株式会社 レーザダイオード
JP2020129653A (ja) * 2019-02-08 2020-08-27 シャープ株式会社 発光素子及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319703A (ja) * 2001-04-20 2002-10-31 Ricoh Co Ltd 半導体装置およびその作製方法
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6990132B2 (en) * 2003-03-20 2006-01-24 Xerox Corporation Laser diode with metal-oxide upper cladding layer
JP4909533B2 (ja) * 2004-06-21 2012-04-04 パナソニック株式会社 半導体レーザ素子及びその製造方法

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