JP2010016261A5 - - Google Patents
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- Publication number
- JP2010016261A5 JP2010016261A5 JP2008176167A JP2008176167A JP2010016261A5 JP 2010016261 A5 JP2010016261 A5 JP 2010016261A5 JP 2008176167 A JP2008176167 A JP 2008176167A JP 2008176167 A JP2008176167 A JP 2008176167A JP 2010016261 A5 JP2010016261 A5 JP 2010016261A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- nitride semiconductor
- layer
- type nitride
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 4
Claims (3)
前記基板または前記第一ｎ型窒化物半導体層は、第一電極と接し、
前記第二ｎ型窒化物半導体層は、第二電極と接し、
前記第一電極は、アノード電極であり、
前記第二電極は、カソード電極であり、
前記第二ｎ型窒化物半導体層に対し前記活性層とは反対側に、導電性酸化物層を備える、窒化物半導体レーザ素子。 On the substrate, at least a first n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an active layer, and a second n-type nitride semiconductor layer are provided in this order from the substrate side.
The substrate or the first n-type nitride semiconductor layer is in contact with the first electrode;
The second n-type nitride semiconductor layer is in contact with the second electrode;
The first electrode is an anode electrode;
The second electrode is a cathode electrode;
A nitride semiconductor laser device comprising a conductive oxide layer on a side opposite to the active layer with respect to the second n-type nitride semiconductor layer .
前記導電性酸化物層は、第二電極と接し、
前記第一電極は、アノード電極であり、
前記第二電極は、カソード電極である、請求項１に記載の窒化物半導体レーザ素子。 The substrate or the first n-type nitride semiconductor layer is in contact with the first electrode;
The conductive oxide layer is in contact with the second electrode;
The first electrode is an anode electrode;
The nitride semiconductor laser element according to claim 1, wherein the second electrode is a cathode electrode.
前記井戸層のＩｎ組成ｘは、０．１５以上０．３０以下である、請求項１または２に記載の窒化物半導体レーザ素子。 The active layer includes a well layer made of In x Ga 1-x N;
In composition x of the well layer is 0.15 to 0.30, a nitride semiconductor laser device according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008176167A JP2010016261A (en) | 2008-07-04 | 2008-07-04 | Nitride semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008176167A JP2010016261A (en) | 2008-07-04 | 2008-07-04 | Nitride semiconductor laser element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010016261A JP2010016261A (en) | 2010-01-21 |
| JP2010016261A5 true JP2010016261A5 (en) | 2011-01-20 |
Family
ID=41702070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008176167A Pending JP2010016261A (en) | 2008-07-04 | 2008-07-04 | Nitride semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010016261A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7856040B2 (en) * | 2008-09-24 | 2010-12-21 | Palo Alto Research Center Incorporated | Semiconductor light emitting devices with non-epitaxial upper cladding |
| WO2011105136A1 (en) * | 2010-02-25 | 2011-09-01 | 三洋電機株式会社 | Semiconductor laser device and optical device |
| JP5742325B2 (en) * | 2010-03-25 | 2015-07-01 | 日亜化学工業株式会社 | Semiconductor laser device and manufacturing method thereof |
| CN103444021B (en) * | 2011-03-24 | 2016-04-27 | 松下知识产权经营株式会社 | Nitride semiconductor luminescent element |
| JP7185867B2 (en) * | 2018-05-18 | 2022-12-08 | 旭化成株式会社 | laser diode |
| JP2020129653A (en) * | 2019-02-08 | 2020-08-27 | シャープ株式会社 | Light emitting device and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319703A (en) * | 2001-04-20 | 2002-10-31 | Ricoh Co Ltd | Semiconductor device and its manufacturing method |
| US6822991B2 (en) * | 2002-09-30 | 2004-11-23 | Lumileds Lighting U.S., Llc | Light emitting devices including tunnel junctions |
| US6990132B2 (en) * | 2003-03-20 | 2006-01-24 | Xerox Corporation | Laser diode with metal-oxide upper cladding layer |
| JP4909533B2 (en) * | 2004-06-21 | 2012-04-04 | パナソニック株式会社 | Semiconductor laser device and manufacturing method thereof |
-
2008
- 2008-07-04 JP JP2008176167A patent/JP2010016261A/en active Pending
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