WO2011105136A1

WO2011105136A1 - Semiconductor laser device and optical device

Info

Publication number: WO2011105136A1
Application number: PCT/JP2011/050955
Authority: WO
Inventors: 森　和思
Original assignee: 三洋電機株式会社
Priority date: 2010-02-25
Filing date: 2011-01-20
Publication date: 2011-09-01

Abstract

Disclosed is a semiconductor laser device that makes it possible to decrease the size of a package that has three semiconductor laser elements. In said semiconductor laser device (100), a first lead (T1) is electrically connected to: an n-side electrode (n12) for a first semiconductor laser element (LD1) and a second semiconductor laser element (LD2); and a p-side electrode (p3) for a third semiconductor laser element (LD3). A second lead (T2) is electrically connected to a p-side electrode (p1) for the first semiconductor laser element (LD1). A third lead (T3) is electrically connected to a p-side electrode (p2) for the second semiconductor laser element (LD2) and an n-side electrode (n3) for the third semiconductor laser element (LD3).

Description

Semiconductor laser device and optical device

The present invention relates to a semiconductor laser device and an optical device.

Conventionally, optical pickups for recording / reproducing BD (Bru-ray Disc), DVD (Digital Verstal Disc) and CD (Compact Disc) are known. In this optical pickup, there is known a three-wavelength semiconductor laser device in which three semiconductor laser elements capable of emitting laser light of three wavelengths of blue-violet, red, and infrared are arranged in one package (for example, (See Patent Documents 1 and 2). In this optical pickup, the three semiconductor laser elements arranged in the three-wavelength semiconductor laser device are selected according to the type of the optical disc inserted into the optical disc device or the like, instead of emitting laser light of each wavelength simultaneously. Only one semiconductor laser element is driven.

Patent Document 1 describes wiring in a conventional three-wavelength semiconductor laser device. In this conventional three-wavelength semiconductor laser device, the n-side electrodes of the blue-violet semiconductor laser element, the red semiconductor laser element, and the infrared semiconductor laser element are all connected to the ground, and the p-side electrodes are electrically connected to each other. Are connected to each insulated lead terminal. That is, the conventional three-wavelength semiconductor laser device requires three terminals in addition to the ground terminal.

However, as described in Patent Document 2, the blue-violet semiconductor laser element has a higher driving voltage than the red semiconductor laser element and the infrared semiconductor laser element, so that the three semiconductor laser elements are included in one package. In the case of mounting, actually, the p-side electrode and the n-side electrode of the blue-violet semiconductor laser element are not connected to the ground, and are wired (floating wiring) while being insulated from the package. That is, in the conventional three-wavelength semiconductor laser device, each of the n-side electrodes of the red semiconductor laser element and the infrared semiconductor laser element is grounded, and each p-side electrode is connected to each electrically insulated lead terminal. Since they are connected, it is not necessary to drive the three semiconductor laser elements at the same time, and four lead terminals are required in addition to the ground terminal even when they are used separately, for example, in an optical pickup.

JP 2004-304111 A JP 2006-108168 A

In a conventional semiconductor laser device in which three semiconductor laser elements are integrated, four lead terminals are required in addition to the ground terminal as described above even when the three semiconductor laser elements are driven separately. It was difficult to make the package size smaller. In addition, when a photodiode for monitoring the light intensity of the emitted laser beam is mounted in this package, it is necessary to add a lead terminal, which has the disadvantage of further increasing the package size. It was.

Further, when the package of the semiconductor laser device becomes large, there is a problem that it is difficult to reduce the size of the optical device such as an optical pickup device or an optical disk device that mounts the semiconductor laser device.

The present invention has been made to solve the above-described problems, and a first object thereof is to provide a semiconductor laser device capable of downsizing a package on which three semiconductor laser elements are mounted. It is.

The second object of the present invention is to provide an optical device that can be miniaturized.

A semiconductor laser device according to a first aspect of the present invention includes a first semiconductor laser element, a second semiconductor laser element, a third semiconductor laser element, the first semiconductor laser element, and the second semiconductor laser element. And a package in which the third semiconductor laser element is disposed, and a first terminal, a second terminal, and a third terminal that are attached to the package and are electrically insulated from each other. The terminals are electrodes on the first polarity side of the first semiconductor laser element, electrodes on the first polarity side of the second semiconductor laser element, and second polarity of the third semiconductor laser element. The second terminal is electrically connected to the second polarity side electrode of the first semiconductor laser element, and the third terminal is electrically connected to the second electrode. The second semiconductor laser element Said second polarity side of the electrode, and are the third semiconductor laser of the first polarity side electrode electrically connected to the device. In the present invention, the first polarity side electrode and the second polarity side electrode are electrodes on one side and the other side of the anode (positive electrode) and cathode (negative electrode) of each semiconductor laser element, respectively. I mean.

In the semiconductor laser device according to the first aspect of the present invention, since each electrode of each semiconductor laser element is connected to each terminal as described above, a voltage is applied to the first terminal and the second terminal. Thus, the first semiconductor laser element can be driven without driving the second and third semiconductor laser elements. In addition, since the second and third semiconductor laser elements are connected with opposite polarities between the first and third terminals, by changing the polarity of the voltage applied between the first and third terminals, The second and third semiconductor lasers can be driven separately without driving the first semiconductor laser element.

As described above, in the semiconductor laser device according to the first aspect of the present invention, since the three semiconductor laser elements can be separately driven by the three terminals, the package in which each semiconductor laser element is arranged can be downsized. Can do.

In the semiconductor laser device according to the first aspect, preferably, any one of the first terminal, the second terminal, and the third terminal is electrically connected to the package. With this configuration, since the terminal electrically connected to the package can be grounded, the three semiconductor laser elements are driven separately by controlling the voltage applied to the remaining two terminals substantially. can do. As a result, it is only necessary that two terminals are insulated from the package, so that the package can be further downsized.

In the above-described configuration, the light receiving element further preferably includes a light receiving element disposed in the package, and a fourth terminal attached to the package and electrically insulated from the package. The first electrode is connected to the fourth terminal, and the second electrode of the light receiving element is connected to the package. If comprised in this way, three semiconductor laser elements and a light receiving element can be operated by three terminals electrically insulated from the package. As a result, a light receiving element capable of monitoring the light intensity of the laser light emitted from each semiconductor laser element can be disposed in the package without increasing the size of the package.

In the above configuration, more preferably, at least one of the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element is bonded onto the surface of the submount. The light receiving element is disposed on the surface of the submount. With this configuration, it is possible to easily arrange (position) the light receiving elements for receiving the laser light emitted from each semiconductor laser element, and to connect the second electrode of the light receiving element and the package. Can also be done easily.

In the semiconductor laser device according to the first aspect, preferably, the first semiconductor laser element and the second semiconductor laser element include a common semiconductor substrate, and the back surface of the semiconductor substrate includes A shared electrode on the first polarity side shared by the first semiconductor laser element and the second semiconductor laser element is formed. That is, the first polarity side electrode of the first semiconductor laser element and the first polarity side electrode of the second semiconductor laser element are integrated as a first polarity side shared electrode on the back surface of the semiconductor substrate. Is formed. If comprised in this way, the connection of a 1st terminal and each 1st polarity side electrode of a 1st and 2nd semiconductor laser element can be connected by one connection means. Thereby, the structure and manufacturing process of the semiconductor laser device can be simplified.

In addition, since the first and second semiconductor laser elements are monolithically formed, when the first and second semiconductor laser elements are mounted on a package, the light emitting point (laser beam emission position) of each semiconductor laser element is mounted. ) Is not relatively shifted. Thereby, since the relative positional accuracy of the light emitting point of each semiconductor laser element can be improved, the semiconductor laser device can be easily positioned when combining the semiconductor laser device and the external optical system.

In the above configuration, more preferably, the third semiconductor laser element is formed on the back surface of the semiconductor substrate such that the second polarity side electrode of the third semiconductor laser element and the shared electrode face each other. It is joined to. If comprised in this way, the connection of the electrode of the 2nd polarity side of a 3rd semiconductor laser element and a 1st terminal can be easily performed via the shared electrode of a 1st and 2nd semiconductor laser element. Can do. Further, for example, it is not necessary to connect the electrode on the second polarity side of the third semiconductor laser element and the shared electrode of the first and second semiconductor laser elements with a wire or the like. The process can be simplified.

In the semiconductor laser device according to the first aspect, preferably, the third semiconductor laser element includes a semiconductor laser element layer made of a nitride-based semiconductor, and the first terminal and the third terminal are , And electrically insulated from the package. With this configuration, wiring (floating wiring) can be performed in a state where both electrodes of the nitride semiconductor laser element (third semiconductor laser element) having a high driving voltage are electrically insulated from the package. It is possible to drive using the existing laser driver IC, and the third semiconductor laser element can be controlled well.

In the semiconductor laser device according to the first aspect, preferably, the first semiconductor laser element and the second semiconductor laser element include a semiconductor laser element layer made of a nitride-based semiconductor, The terminal, the second terminal, and the third terminal are electrically insulated from the package. According to this structure, wiring (floating wiring) is performed in a state where each electrode of the nitride semiconductor laser element (first and second semiconductor laser elements) having a high driving voltage is electrically insulated from the package. Therefore, the first and second semiconductor laser elements can be easily controlled.

An optical device according to a second aspect of the present invention includes a first semiconductor laser element, a second semiconductor laser element, a third semiconductor laser element, the first semiconductor laser element, the second semiconductor laser element, and A semiconductor laser device having a package in which the third semiconductor laser element is disposed; a first terminal attached to the package; a second terminal; and a third terminal; An optical system for controlling laser light, wherein the first terminal is an electrode on the first polarity side of the first semiconductor laser element, and an electrode on the first polarity side of the second semiconductor laser element , And a second polarity side electrode of the third semiconductor laser element, and the second terminal is an electrode on the second polarity side of the first semiconductor laser element. And electrically connected And the third terminal is electrically connected to the electrode on the second polarity side of the second semiconductor laser element and the electrode on the first polarity side of the third semiconductor laser element. Has been.

In the optical device according to the second aspect of the present invention, as described above, since each electrode of each semiconductor laser element is connected to each terminal, a voltage is applied to the first terminal and the second terminal. The first semiconductor laser element can be driven without driving the second and third semiconductor laser elements. In addition, since the second and third semiconductor laser elements are connected with opposite polarities between the first and third terminals, by changing the polarity of the voltage applied between the first and third terminals, The second and third semiconductor lasers can be driven separately without driving the first semiconductor laser element.

As described above, in the optical device according to the second aspect of the present invention, since the three semiconductor laser elements can be separately driven by the three terminals, the semiconductor laser device capable of downsizing the package is used. Can do. Thereby, an optical apparatus can be reduced in size.

According to the present invention, it is possible to provide a semiconductor laser device and an optical device that can be easily miniaturized.

1 is an external perspective view of a semiconductor laser device 100 according to a first embodiment of the present invention. FIG. 3 is a front view of the semiconductor laser device 100 as viewed from the laser beam emission direction (X direction) with the cap 2 removed. FIG. 3 is a top view when viewed from above (Z direction) perpendicular to the laser beam emission direction (X direction) with the cap 2 of the semiconductor laser device 100 removed. FIG. 3 is an enlarged view of a main part of FIG. 2, and is a front view of a three-wavelength semiconductor laser element 101 arranged in the semiconductor laser device 100. 3 is a wiring diagram of semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 100. FIG. It is sectional drawing in the state which removed the cap 2 of the semiconductor laser apparatus 110 by the 1st modification of 1st Embodiment of this invention. 3 is a wiring diagram of semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 110. FIG. FIG. 6 is a top view of the three-wavelength semiconductor laser element 101 bonded on the submount 116 with the cap 2 of the semiconductor laser device 120 according to the second modification of the first embodiment of the present invention viewed from the Z direction. is there. FIG. 9 is a cross-sectional view taken along line A2-A2 of FIG. It is a top view when the three-wavelength semiconductor laser element 201 joined on the submount 106 with the cap 2 of the semiconductor laser device 200 according to the second embodiment of the present invention removed is viewed from the Z direction. It is a front view when the 3 wavelength semiconductor laser element 201 joined on the submount 106 in the state which removed the cap 2 of the semiconductor laser apparatus 200 by 2nd Embodiment of this invention was seen from the X direction. It is a top view when each semiconductor laser element LD1, LD2, and LD3 joined on the submount 106 in the state where the cap 2 of the semiconductor laser device 300 according to the third embodiment of the present invention is removed is viewed from the Z direction. It is a front view when each semiconductor laser element LD1, LD2, and LD3 joined on the submount 106 in the state where the cap 2 of the semiconductor laser device 300 according to the third embodiment of the present invention is removed is viewed from the X direction. It is a top view when each semiconductor laser element LD1, LD2, and LD3 joined on the submount 106 with the cap 2 of the semiconductor laser device 400 according to the fourth embodiment of the present invention removed is viewed from the Z direction. It is a front view when each semiconductor laser element LD1, LD2, and LD3 joined on the submount 106 in the state where the cap 2 of the semiconductor laser device 400 according to the fourth embodiment of the present invention is removed is viewed from the X direction. 4 is a wiring diagram of semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 400. FIG. 10 is a table showing wiring states of semiconductor laser elements LD1, LD2 and LD3 in

semiconductor laser devices

410, 420 and 430 according to first to third modifications of the fourth embodiment of the present invention. 4 is a wiring diagram of semiconductor laser elements LD1, LD2, and LD3 in a semiconductor laser device 420. FIG. It is a block diagram of the optical pick-up 1000 by 5th Embodiment of this invention. It is a block diagram of the optical disk apparatus 2000 by 6th Embodiment of this invention. It is a block diagram of the projector apparatus 3000 by 7th Embodiment of this invention. 5 is a timing chart of image signals given to projector device 3000.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings. In the following description, the emission direction of the laser beam from the semiconductor laser device is referred to as the front direction (X direction), the X direction surface is referred to as the front surface, and the −X direction surface opposite to the X direction is referred to as the rear surface. A direction orthogonal to the X direction is referred to as an upper surface direction (Z direction), a surface in the Z direction is referred to as an upper surface, and a surface in the −Z direction opposite to the Z direction is referred to as a lower surface. A plane parallel to the X direction and the Z direction is referred to as a side surface.

(First embodiment)
FIG. 1 is an external perspective view of a semiconductor laser device 100 according to the first embodiment of the present invention. 2 and 3 show the laser beam emission direction (X direction) and the direction perpendicular to the emission direction (Z direction) with the cap 2 of the semiconductor laser device 100 removed, respectively. It is the front view and top view of these. FIG. 4 is an enlarged view of the main part of FIG. 2, and is a front view of the three-wavelength semiconductor laser element 101 disposed in the semiconductor laser device 100. FIG. 5 is a wiring diagram of the semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 100. FIG.

As shown in FIG. 1, the semiconductor laser device 100 according to the first embodiment of the present invention includes a package P and a metal first lead T1, a second lead T2, and a third lead T3 attached to the package P. And a fourth lead T4. The first lead T1, the second lead T2, and the third lead T3 are examples of the “first terminal”, the “second terminal”, and the “third terminal” in the present invention, respectively. . The package P includes a disk-shaped metal base 1 and a metal cap 2 attached to the front surface 1 a of the base 1, and a transparent optical material is provided in the opening 2 a on the front surface of the cap 2. A window 3 is attached.

The first lead T1, the second lead T2, and the third lead T3 penetrate the base 1 from the rear surface 1b side of the base 1 and extend into the package P (in the cap 2). The leads T1, T2, and T3 are electrically insulated from the base 1 by insulating members 5 filled in through

holes

1c, 1d, and 1e that penetrate the front surface 1a and the rear surface 1b of the base 1, respectively. It is fixed to. Further, the leads T1, T2, and T3 are electrically insulated from each other. The fourth lead T4 is a ground terminal, is integrally formed with the base 1 so as to extend rearward from the rear surface 1b of the base 1, and is used for grounding the package P.

As shown in FIGS. 2 and 3, in the cap 2, a header 4 formed integrally with the base 1 on the front surface 1a of the base 1 protrudes. A three-wavelength semiconductor laser element 101 to be described later is fixed on the upper surface 4 a of the header 4, and the three-wavelength semiconductor laser element 101 is sealed by the base 1 and the cap 2.

As shown in FIGS. 3 and 4, the three-wavelength semiconductor laser device 101 has a first laser disposed on a submount 106 made of n-type Si so as to emit each laser beam in the same direction (X direction). A semiconductor laser element LD1, a second semiconductor laser element LD2, and a third semiconductor laser element LD3 are provided.

Here, the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are formed monolithically on the n-type GaAs substrate 11. That is, on the lower surface 11a of the n-type GaAs substrate 11, the first semiconductor laser element LD1 is formed in a region along one side surface 11c of the n-type GaAs substrate 11, and in the region along the other side surface 11d. A second semiconductor laser element LD2 is formed. The n-type GaAs substrate 11 is an example of the “common semiconductor substrate” in the present invention.

Specifically, the first semiconductor laser element LD1 includes an n-type AlGaInP cladding layer 12, an MQW active layer 13 made of GaInP / AlGaInP, and a p-type AlGaInP cladding layer 14 on the lower surface 11a of the n-type GaAs substrate 11. A GaInP-based semiconductor laser element layer 15 is sequentially stacked. On the lower surface of the GaInP semiconductor laser element layer 15, a ridge 14a extending in a stripe shape in the X direction is formed. A current blocking layer 16 made of an insulator is formed on the lower surface of the GaInP-based semiconductor laser element layer 15 other than the lower surface of the ridge 14a. A p-side electrode p <b> 1 is formed on the lower surface of the current block layer 16, and is electrically connected to the GaInP-based semiconductor laser element layer 15 on the lower surface of the ridge 14 a exposed from the current block layer 16. The p-side electrode p1 is an example of the “second polarity side electrode of the first semiconductor laser element” in the present invention.

The second semiconductor laser element LD2 is a GaAs semiconductor in which an n-type AlGaAs cladding layer 22, an MQW active layer 23 made of AlGaAs, and a p-type AlGaAs cladding layer 24 are stacked in this order on the lower surface 11a of the n-type GaAs substrate 11. A laser element layer 25 is provided. On the lower surface of the GaAs semiconductor laser element layer 25, a ridge 24a extending in a stripe shape in the X direction is formed in parallel with the ridge 14a. A groove 17 is formed between the GaInP based semiconductor laser element layer 15 and the GaAs based semiconductor laser element layer 25, and the GaInP based semiconductor laser element layer 15 and the GaAs based semiconductor laser element layer 25 are formed apart from each other. Yes. The current blocking layer 16 is formed by extending on the surface of the groove portion 17, and the current blocking layer 16 is formed by extending on the lower surface of the GaAs semiconductor laser element layer 25 other than the lower surface of the ridge 24a. Yes. A p-side electrode p <b> 2 is formed on the lower surface of the current blocking layer 16, and is electrically connected to the GaAs based semiconductor laser element layer 25 on the lower surface of the ridge 24 a exposed from the current blocking layer 16. The p-side electrode p2 is an example of the “second polarity-side electrode of the second semiconductor laser element” in the present invention.

On the upper surface (back surface) 11b opposite to the lower surface 11a of the n-type GaAs substrate 11, an n-side electrode n12 shared by the first semiconductor laser element LD1 and the second semiconductor laser element LD2 is formed. The n-side electrode n12 is an example of the “first polarity side electrode of the first semiconductor laser element” and the “first polarity side electrode of the second semiconductor laser element” of the present invention, It is an example of a “first polarity side shared electrode”. That is, the n-side electrode n12 functions as an n-side electrode of the first semiconductor laser element LD1 and an n-side electrode of the second semiconductor laser element LD2.

An end face coating film (not shown) made of a dielectric material that controls the reflectance of the laser beam is formed on the front surface (emission end surface) 15a and the rear surface (reflection end surface) 15b of the GaInP-based semiconductor laser element layer 15, respectively. Yes. Thereby, in the first semiconductor laser element LD1, the light intensity of the laser light emitted in the X direction from the emission end face 15a is made larger than the light intensity of the laser light emitted in the −X direction from the reflection end face 15b. Thus, red laser light having a wavelength of about 650 nm is emitted from the region (light emitting point) of the MQW active layer 13 in the vicinity of the ridge 14a on the emission end face 15a.

End face coat films (not shown) made of a dielectric material for controlling the reflectance of the laser beam are formed on the front face (outgoing end face) 25a and the rear face (reflecting end face) 25b of the GaAs semiconductor laser element layer 25, respectively. Yes. Thereby, in the second semiconductor laser element LD2, the light intensity of the laser light emitted from the emission end face 25a is made larger than the light intensity of the laser light emitted from the reflection end face 25b. Infrared laser light having a wavelength of about 780 nm is emitted from the region (light emitting point) of the MQW active layer 23 in the vicinity of the ridge 24a.

The third semiconductor laser element LD3 is a GaN in which an n-type AlGaN cladding layer 32, an MQW active layer 33 made of InGaN / GaN, and a p-type AlGaN cladding layer 34 are stacked in this order on the lower surface 31a of the n-type GaN substrate 31. The semiconductor laser element layer 35 is provided. The GaN-based semiconductor laser element layer 35 is an example of the “semiconductor laser element layer made of a nitride-based semiconductor” in the present invention. On the lower surface of the GaN-based semiconductor laser element layer 35, a ridge 34a extending in a stripe shape in the X direction is formed. A current blocking layer 36 made of an insulator is formed on the lower surface of the GaN-based semiconductor laser element layer 35 other than the lower surface of the ridge 34a. A p-side electrode p3 is formed on the lower surface of the current block layer 36, and is electrically connected to the GaN-based semiconductor laser element layer 35 on the lower surface of the ridge 34a exposed from the current block layer 36. The p-side electrode p3 is an example of the “second polarity side electrode of the third semiconductor laser element” in the present invention.

An n-side electrode n3 is formed on the upper surface (back surface) 31b opposite to the lower surface 31a of the n-type GaN substrate 31. The n-side electrode n3 is an example of the “electrode on the first polarity side of the third semiconductor laser element” in the present invention.

An end face coating film (not shown) made of a dielectric that controls the reflectance of the laser beam is formed on the front surface (emission end surface) 35a and the rear surface (reflection end surface) 35b of the GaN-based semiconductor laser element layer 35, respectively. ing. As a result, in the third semiconductor laser element LD3, the light intensity of the laser light emitted from the emission end face 35a is made larger than the light intensity of the laser light emitted from the reflection end face 35b, and is on the emission end face 35a. A blue-violet laser beam having a wavelength of about 405 nm is emitted from the region (light emitting point) of the MQW active layer 33 in the vicinity of the ridge 34a.

The third semiconductor laser element LD3 is configured such that the length in the X direction is shorter than that of the first semiconductor laser element LD1 and the second semiconductor laser element LD2. Here, since the n-type GaN substrate 31 of the third semiconductor laser element LD3 is relatively expensive, the third semiconductor laser element can be provided at low cost by shortening the resonator length. . In addition, in the n-type GaAs substrate 11 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2, the reliability can be increased by increasing the resonator length.

An insulating layer 107 is formed on the upper surface 106a of the submount 106. On the insulating layer 107,

connection electrodes

118 and 128 extending in a strip shape in the X direction are formed apart from each other. The

connection electrodes

118 and 128 are longer in the X direction than the first semiconductor laser element LD1 and the second semiconductor laser element LD2. On the

connection electrodes

118 and 128, the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are arranged so that the p-side electrodes p1 and p2 face each other through the fusion layers 119 and 129 made of solder, respectively. Are joined with a junction-down structure. Here, the front face 106c of the submount 106 and the emission end faces 15a and 25a of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are arranged on the same plane.

In the region corresponding to the upper side of the second semiconductor laser element LD2 on the n-side electrode n12, the third semiconductor laser element LD3 is arranged so that the p-side electrode p3 is opposed via the fusion layer 139 made of solder. It is joined with a junction-down structure. Here, the emission end faces 15a and 25a of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 and the emission end face 35a of the third semiconductor laser element LD3 are arranged on the same plane, and the ridge 34a and the

ridges

14a and 24a are arranged in parallel.

The lower surface (back surface) 106b opposite to the upper surface 106a of the submount 106 is joined to the upper surface 4a of the header 4 via a fusion layer (not shown). Here, the front surface 106c of the submount 106 and the front surface 4c of the header 4 are disposed on the same surface.

One end of the Au wire W1 is bonded onto the first lead T1, and the other end of the Au wire W1 is exposed from the third semiconductor laser element LD3 when viewed from the Z direction. Bonded on the upper surface of the n-side electrode n12. One end portion of the Au wire W2 is bonded onto the second lead T2, and the other end portion of the Au wire W2 is exposed from the first semiconductor laser element LD1 when viewed from the Z direction. Bonding is performed on the upper surface of the connection electrode 118. One end of the Au wire W31 is bonded onto the third lead T3, and the other end of the Au wire W31 is exposed from the second semiconductor laser element LD2 when viewed from the Z direction. Bonding is performed on the upper surface of the connection electrode 128. Further, one end of the Au wire W32 is also bonded on the third lead T3, and the other end of the Au wire W32 is bonded on the n-side electrode n3. Each wire is preferably wired to be as short as possible, but the bonding position on each semiconductor laser element side is in the vicinity of the center of the n-side electrode n12 or n-side electrode n3 in consideration of high-speed pulse response. It is preferable to be formed.

In the semiconductor laser device 100, the first lead T1 is connected to the n-side electrode n12 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 as shown in FIG. Are electrically connected to the p-side electrode p3 of the third semiconductor laser element LD3. The second lead T2 is electrically connected to the p-side electrode p1 of the first semiconductor laser element LD1, and the third lead T3 is connected to the p-side electrode p2 of the second semiconductor laser element LD2. And it is electrically connected to the n-side electrode n3 of the third semiconductor laser element LD3.

In this semiconductor laser device 100, a second semiconductor laser is applied by applying a voltage to the first lead T1 and the second lead T2 so that a forward voltage is applied to the first semiconductor laser element LD1. The first semiconductor laser element LD1 can be driven without driving the element LD2 and the third semiconductor laser element LD3. In addition, the first lead T1 and the third lead are applied so that a forward voltage is applied to the second semiconductor laser element LD2 (so that a reverse voltage is applied to the third semiconductor laser element LD3). By applying a voltage between the leads T3, the second semiconductor laser element LD2 can be driven without driving the first semiconductor laser element LD1 and the third semiconductor laser element LD3. Further, the first lead T1 and the third lead are applied so that a forward voltage is applied to the third semiconductor laser element LD3 (so that a reverse voltage is applied to the second semiconductor laser element LD2). By applying a voltage between the leads T3, the third semiconductor laser element LD3 can be driven without driving the first semiconductor laser element LD1 and the second semiconductor laser element LD2.

As described above, in this semiconductor laser device 100, the three semiconductor laser elements LD1, LD2, and LD3 can be driven separately by the three leads T1, T2, and T3, so that each of the semiconductor laser elements LD1, LD2, and LD3 is driven. It is possible to reduce the size of the package in which the device is disposed.

Further, in this semiconductor laser device 100, the first semiconductor laser element LD1 and the second semiconductor laser element LD2 have a common n-type GaAs substrate 11, and are formed on the back surface 11b of the n-type GaAs substrate 11. The n-side electrode n12 is shared. Thereby, the connection between the first lead T1 and the n-side electrodes of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 can be connected by one connection means (Au wire W1). As a result, the configuration and manufacturing process of the semiconductor laser device 100 can be simplified. In addition, since the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are formed monolithically, when the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are mounted on the package P, The light emitting point (laser beam emission position) of each semiconductor laser element does not relatively shift. As a result, the relative positional accuracy of the light emitting points of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 can be improved. Therefore, when the semiconductor laser device 100 and the external optical system are combined, the semiconductor laser The apparatus 100 can be easily positioned.

Further, in this semiconductor laser device 100, the third semiconductor laser element LD3 has its p-side electrode p3 and the n-side electrode n12 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 facing each other. The n-type GaAs substrate 11 is bonded to the back surface 11b. With this configuration, the p-side electrode p3 of the third semiconductor laser element LD3 and the first lead T1 can be easily connected via the n-side electrode n12. Further, for example, it is not necessary to connect the p-side electrode p3 of the third semiconductor laser element LD3 and the n-side electrode n12 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 with a wire or the like. The configuration and manufacturing process of the laser device 100 can be simplified.

In this semiconductor laser device 100, the third semiconductor laser element LD3 has a GaN-based semiconductor laser element layer 35, and the first lead T1 and the third lead T3 are electrically connected to the package P. Insulated. As a result, wiring (floating wiring) can be performed in a state where both electrodes p3 and n3 of the GaN-based semiconductor laser device (third semiconductor laser device LD3) having a high driving voltage are electrically insulated from the package P. It is possible to drive using the existing laser driver IC, and the third semiconductor laser element can be controlled well. In order to drive the GaN-based semiconductor laser element (third semiconductor laser element LD3) in the state of the floating wiring as described above, the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are driven. Therefore, it is necessary to be able to switch the GND line on the laser driver side to open.

(First modification of the first embodiment)
6 is a cross-sectional view of the semiconductor laser device 110 according to the first modification of the first embodiment of the present invention with the cap 2 removed, and corresponds to a cross-sectional view taken along the line A1-A1 of FIG. To do. In FIG. 6, only the approximate positions of the three-wavelength semiconductor laser element 101 and the submount 106 are indicated by a one-dot chain line, and the description of each Au wire is omitted. FIG. 7 is a wiring diagram of the semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 110. In the following description, the same components as those of the semiconductor laser device 100 according to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

The configuration of the semiconductor laser device 110 according to the first modification of the first embodiment of the present invention is different from the semiconductor laser device 100 in that a photodiode PD1 is provided in the package P. That is, as shown in FIG. 6, the front surface 1a of the base 1 is formed with a recess 1f at a position facing each of the reflection end faces 15b, 25b and 35b (see FIG. 3) of the three-wavelength semiconductor laser element 101. A photodiode PD1 is joined to the recess 1f by a fusion layer (not shown), and the n-side electrode n4 formed on the rear surface of the photodiode PD1 and the front surface 1a of the base 1 are electrically connected. It is connected. The photodiode PD1 is an example of the “light receiving element” in the present invention.

Referring to FIG. 3, the other end of Au wire W2 connected to connection electrode 118 in semiconductor laser device 100 is connected to p-side electrode p4 on the front surface of photodiode PD1. Instead, one end of an Au wire W4 (not shown) is bonded to the upper surface of the connection electrode 118, and the other end of the Au wire W4 (not shown) is bonded to the upper surface 4a of the header 4. It is connected to the. As a result, the p-side electrode p1 of the first semiconductor laser element LD1 is electrically connected to the fourth lead T4 via the package P. Note that the first lead T1, the fourth lead T4, the third lead T3, and the second lead T2 are the “first terminal”, “second terminal”, “third terminal” of the present invention, respectively. It is an example of “terminal” and “fourth terminal”. Other configurations of the semiconductor laser device 110 are the same as those of the semiconductor laser device 100.

In the semiconductor laser device 110, the first lead T1 is connected to the n-side electrode n12 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 as shown in FIG. Are connected to the p-side electrode p3 of the third semiconductor laser element LD3. The p-side electrode p1 of the first semiconductor laser element LD1 is grounded via the package 1 and the fourth lead T4. The third lead T3 is connected to the p-side electrode p2 of the second semiconductor laser element LD2 and the n-side electrode n3 of the third semiconductor laser element LD3.

In the semiconductor laser device 110, since the fourth lead T4 is electrically connected to the package P, the fourth lead T4 electrically connected to the package P can be grounded. Thus, the three semiconductor laser elements LD1, LD2 and LD3 can be driven separately by controlling the voltage applied to the remaining two leads T1 and T3, so that the terminals insulated from the package P Need only be two (first lead T1 and third lead T3). As a result, the second lead T2 is not necessary for the purpose of driving the semiconductor laser elements LD1, LD2, and LD3 (in the absence of the photodiode PD1), and thus the package P of the semiconductor laser device 110 is further reduced in size. Can be

In addition, the semiconductor laser device 110 includes a photodiode PD1 disposed in the package P and a second lead T2 attached to the package P and electrically insulated from the package P. . The p-side electrode p4 of the photodiode PD1 is connected to the second lead T2, and the n-side electrode n4 of the photodiode PD1 is connected to the package P. Accordingly, the three semiconductor laser elements LD1, LD2, and LD3 and the photodiode PD1 can be operated by the package P (fourth lead T4) and the three leads T1, T3, and T2. Accordingly, the photodiode PD1 capable of monitoring the light intensity of the laser light emitted from each of the semiconductor laser elements LD1, LD2, and LD3 can be disposed in the package P without increasing the size of the package P. . Other effects of the semiconductor laser device 110 are the same as the effects of the semiconductor laser device 100.

(Second modification of the first embodiment)
FIG. 8 shows the three-wavelength semiconductor laser device 101 bonded on the submount 116 with the cap 2 removed from the semiconductor laser device 120 according to the second modification of the first embodiment of the present invention when viewed from the Z direction. FIG. FIG. 9 is a cross-sectional view taken along line A2-A2 of FIG. In the following description, the same components as those of the semiconductor laser device 110 according to the first modification are denoted by the same reference numerals and description thereof is omitted.

The configuration of the semiconductor laser device 120 according to the second modification of the first embodiment of the present invention is a submount in place of the photodiode PD1 attached to the front surface 1a of the base 1 as compared with the semiconductor laser device 110. The difference is that the photodiode PD2 is arranged behind the upper surface 116a of the 116 (-X direction). The photodiode PD2 is an example of the “light receiving element” in the present invention.

As shown in FIG. 9, a p-type region 116p is formed in the rear region of the upper surface 116a of the submount 116 made of n-type Si, and constitutes a photodiode PD2 having the p-type region 116p as a light receiving surface. . A p-side electrode p5 is formed on one side end of the p-type region 116p (the end on the side close to the second lead T2). An insulating film 117 is formed on the upper surface 116a of the submount 116 so as to cover a region in the front (X direction) of the p-type region 116p. Further, the insulating film 117 is formed to extend to the region where the p-side electrode p5 is formed on the upper surface 116a of the submount 116 so as to insulate the p-side electrode p5 from the upper surface 116a.

In the semiconductor laser device 120, the other end of the Au wire W2 connected to the second lead T2 is bonded to the p-side electrode p5 of the photodiode PD2. A lower surface (back surface) 116b opposite to the upper surface 116a of the submount 116 is joined to the upper surface 4a of the header 4 via a fusion layer (not shown). Further, the front surface 116c of the submount 116 and the front surface 4c of the header 4 are arranged on the same surface. Other configurations of the semiconductor laser device 120 are the same as those of the semiconductor laser device 110.

In this semiconductor laser device 120, since the photodiode PD2 is formed on the upper surface 116a of the submount 116, the light intensity of the laser light emitted from each of the semiconductor laser elements LD1, LD2, and LD3 can be easily monitored. In addition, it is not necessary to bond individual photodiodes to the recesses 1f (see FIG. 6) of the front surface 1a of the base 1, and the manufacturing process can be simplified. Other effects of the semiconductor laser device 120 are the same as the effects of the semiconductor laser device 110.

(Second Embodiment)
10 and 11 show the three-wavelength semiconductor laser device 201 bonded on the submount 106 with the cap 2 removed from the semiconductor laser device 200 according to the second embodiment of the present invention, respectively, from the Z direction and the X direction. It is the top view and front view when it sees. In the following description, the same components as those of the semiconductor laser device 100 according to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

The semiconductor laser device 200 according to the second embodiment of the present invention differs from the semiconductor laser device 100 in the way of joining the semiconductor laser elements LD1, LD2 and LD3 constituting the three-wavelength semiconductor laser element 201. Yes. That is, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are joined so that the p-side electrode p1, the p-side electrode p2, and the p-side electrode p3 face each other. ing.

Specifically, a groove portion 17 between the first semiconductor laser element LD1 and the second semiconductor laser element LD2 is embedded in the upper surfaces of the first semiconductor laser element LD1 and the second semiconductor laser element LD2. An insulating layer 18 is formed, and the upper surface of the insulating layer 18 is formed flat. A connection electrode 138 is formed on the insulating layer 18. The p-side electrode p3 of the third semiconductor laser element LD3 is electrically connected to the connection electrode 138 via a fusion layer 139 made of solder. Here, the emission end face 35a of the third semiconductor laser element LD3 and the emission end faces 15a and 25a of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are disposed on the same plane, and the

ridge

14a and 24a and the ridge 34a are arranged in parallel to each other.

The n-side electrode n12 shared by the first semiconductor laser element LD1 and the second semiconductor laser element LD2 is electrically connected to the connection electrode 218 on the submount 106 through a fusion layer 219 made of solder. . Here, the front face 106c of the submount 106 and the emission end faces 15a and 25a of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 are arranged on the same plane.

Au wires W11 and W12 are bonded on the first lead T1, and the other end of the Au wire W11 is seen from the Z direction, the first semiconductor laser element LD1 and the second semiconductor laser element. Bonded on the upper surface of the connection electrode 218 exposed from the LD 2, the other end of the Au wire W 12 is on the upper surface of the connection electrode 138 exposed from the third semiconductor laser element LD 3 when viewed from the Z direction. Bonded to. An Au wire W2 is bonded on the second lead T2, and the other end of the Au wire W2 is on the p-side electrode p1 of the first semiconductor laser element LD1 exposed from the current blocking layer 16. Bonded. Au wires W31 and W32 are bonded on the third lead T3, and the other end of the Au wire W31 is the p-side electrode p2 of the second semiconductor laser element LD2 exposed from the current blocking layer 16. The other end of the Au wire W32 is bonded to the n-side electrode n3 of the third semiconductor laser element LD3. The other configuration of the semiconductor laser device 200 is the same as that of the semiconductor laser device 100.

Also in this semiconductor laser device 200, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are connected to each other as shown in FIG. Yes.

In this semiconductor laser device 200, the p-side electrode p1 of the first semiconductor laser element LD1 and the p-side electrode p2 of the second semiconductor laser element LD2 are opposed to the p-side electrode p3 of the third semiconductor laser element LD3. Since they are bonded, the light emitting points of the semiconductor laser elements LD1, LD2, and LD3 can be brought close to each other. Thereby, when combining with an external optical system, it can adjust easily. Other effects of the semiconductor laser device 200 are the same as those of the semiconductor laser device 100.

(Third embodiment)
12 and 13 show the respective semiconductor laser elements LD1, LD2 and LD3 bonded on the submount 106 with the cap 2 removed from the semiconductor laser device 300 according to the third embodiment of the present invention. It is the top view and front view when it sees from a X direction. In the following description, the same components as those of the semiconductor laser device 100 according to the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

In the semiconductor laser device 300 according to the third embodiment of the present invention, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are respectively junction-down on the submount 106. It is joined with. That is, on the insulating layer 107 on the submount 106,

connection electrodes

118, 128, and 138 are formed apart from each other along the X direction. The

connection electrodes

118, 128, and 138 are configured such that the lengths in the X direction are longer than those of the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3, respectively. ing. On the

connection electrodes

118, 128, and 138, the p-side electrode p1 of the first semiconductor laser element LD1 and the p-side of the second semiconductor laser element LD2, respectively, via the fusion layers 119, 129, and 139 made of solder. The electrode p2 and the p-side electrode p3 of the third semiconductor laser element LD3 are joined. Here, the front face 106c of the submount 106 and the emission end faces 15a, 25a, and 35a of the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are arranged on the same plane. In addition, the

ridges

14a and 24a and the ridge 34a are arranged in parallel to each other.

Au wires W11 and W12 are bonded on the first lead T1, and the other end of the Au wire W11 is an n-side electrode n12 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2. The other end of the Au wire W12 is bonded to the upper surface of the connection electrode 138 exposed from the third semiconductor laser element LD3 when viewed from the Z direction. An Au wire W2 is bonded onto the second lead T2, and the other end of the Au wire W2 is on the connection electrode 118 exposed from the first semiconductor laser element LD1 when viewed from the Z direction. Bonded. Au wires W31 and W32 are bonded onto the third lead T3, and the other end of the Au wire W31 is connected electrode 128 exposed from the second semiconductor laser element LD2 when viewed from the Z direction. The other end of the Au wire W32 is bonded to the n-side electrode n3 of the third semiconductor laser element LD3. Other configurations of the semiconductor laser device 300 are the same as those of the semiconductor laser device 100.

Also in this semiconductor laser device 300, by providing the above configuration, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are respectively connected as shown in FIG. Yes.

In this semiconductor laser device 300, all of the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are bonded onto the upper surface 106a of the submount 106 by junction-down. The height of the light emitting point of each semiconductor laser element (distance from the submount 106) can be made substantially equal. Thereby, when combining with an external optical system, it can adjust easily.

In addition, since each of the semiconductor laser elements LD1, LD2, and LD3 is joined on the submount 106 by junction down, the heat dissipation characteristics are improved and the reliability at high output is high. Other effects of the semiconductor laser device 300 are the same as the effects of the semiconductor laser device 100.

(Fourth embodiment)
14 and 15 show the semiconductor laser elements LD1, LD2, and LD3 bonded on the submount 106 with the cap 2 removed from the semiconductor laser device 400 according to the fourth embodiment of the present invention. It is the top view and front view when it sees from a X direction. FIG. 16 is a wiring diagram of the semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 400. In the following description, the same reference numerals are given to the same components as those of the semiconductor laser device 300 according to the third embodiment, and the description thereof is omitted.

In the semiconductor laser device 400 according to the fourth embodiment of the present invention, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3, which are formed separately from each other, are joined together to increase the submount 106. Joined on top.

The first semiconductor laser element LD1 is a GaInP in which an n-type AlGaInP clad layer 52, an MQW active layer 53 made of GaInP / AlGaInP, and a p-type AlGaInP clad layer 54 are laminated on an upper surface 51a of an n-type GaAs substrate 51 in this order. A semiconductor laser element layer 55 is provided. On the upper surface of the GaInP semiconductor laser element layer 55, a ridge 54a extending in a stripe shape in the X direction is formed. On the upper surface of the GaInP-based semiconductor laser element layer 55 other than the upper surface of the ridge 54a, a current blocking layer 56 made of an insulator is formed. A p-side electrode p <b> 1 is formed on the upper surface of the current block layer 56, and is electrically connected to the GaInP-based semiconductor laser element layer 55 on the upper surface of the ridge 54 a exposed from the current block layer 56. The p-side electrode p1 is an example of the “second polarity side electrode of the first semiconductor laser element” in the present invention.

On the lower surface (back surface) 51b opposite to the upper surface 51a of the n-type GaAs substrate 51, an n-side electrode n1 is formed. The n-side electrode n1 is an example of the “electrode on the first polarity side of the first semiconductor laser element” in the present invention.

An end face coating film (not shown) made of a dielectric material that controls the reflectance of the laser beam is formed on the front surface (emission end surface) 55a and the rear surface (reflection end surface) 55b of the GaInP based semiconductor laser element layer 55, respectively. ing. As a result, in the first semiconductor laser element LD1, the light intensity of the laser light emitted from the emission end face 55a is made larger than the light intensity of the laser light emitted from the reflection end face 55b, and is on the emission end face 55a. Red laser light having a wavelength of about 650 nm is emitted from the region (light emitting point) of the MQW active layer 53 in the vicinity of the ridge 54a.

The second semiconductor laser element LD2 is a GaN in which an n-type AlGaN cladding layer 62, an MQW active layer 63 made of InGaN / GaN, and a p-type AlGaN cladding layer 64 are stacked in this order on an upper surface 61a of an n-type GaN substrate 61. A semiconductor laser element layer 65 is formed. The GaN-based semiconductor laser element layer 65 is an example of the “semiconductor laser element layer made of a nitride-based semiconductor” in the present invention. On the upper surface of the GaN-based semiconductor laser element layer 65, a ridge 64a extending in a stripe shape in the X direction is formed. On the upper surface of the GaN-based semiconductor laser element layer 65 other than the upper surface of the ridge 64a, a current blocking layer 66 made of an insulator is formed. A p-side electrode p <b> 2 is formed on the upper surface of the current blocking layer 66, and is electrically connected to the GaN-based semiconductor laser element layer 65 on the upper surface of the ridge 64 a exposed from the current blocking layer 66. The p-side electrode p2 is an example of the “second polarity-side electrode of the second semiconductor laser element” in the present invention.

An n-side electrode n2 is formed on a lower surface (back surface) 61b opposite to the upper surface 61a of the n-type GaN substrate 61. The n-side electrode n2 is an example of the “electrode on the first polarity side of the second semiconductor laser element” in the present invention.

An end face coating film (not shown) made of a dielectric that controls the reflectance of the laser beam is formed on the front surface (emission end surface) 65a and the rear surface (reflection end surface) 65b of the GaN-based semiconductor laser element layer 65, respectively. ing. Thereby, in the second semiconductor laser element LD2, the light intensity of the laser light emitted from the emission end face 65a is made larger than the light intensity of the laser light emitted from the reflection end face 65b. A blue laser beam having a wavelength of about 460 nm is emitted from the region (light emitting point) of the MQW active layer 63 in the vicinity of the ridge 64a.

The third semiconductor laser element LD3 is a GaN in which an n-type AlGaN cladding layer 72, an MQW active layer 73 made of InGaN / GaN, and a p-type AlGaN cladding layer 74 are stacked in this order on an upper surface 71a of an n-type GaN substrate 71. A semiconductor laser element layer 75 is formed. The GaN-based semiconductor laser element layer 75 is an example of the “semiconductor laser element layer made of a nitride-based semiconductor” in the present invention. On the upper surface of the GaN-based semiconductor laser element layer 75, a ridge 74a extending in a stripe shape in the X direction is formed. A current blocking layer 76 made of an insulator is formed on the upper surface of the GaN-based semiconductor laser element layer 75 other than the upper surface of the ridge 74a. A p-side electrode p3 is formed on the upper surface of the current blocking layer 76, and is electrically connected to the GaN-based semiconductor laser element layer 75 on the upper surface of the ridge 74a exposed from the current blocking layer 76. The p-side electrode p3 is an example of the “second polarity side electrode of the third semiconductor laser element” in the present invention.

An n-side electrode n3 is formed on a lower surface (back surface) 71b opposite to the upper surface 71a of the n-type GaN substrate 71. The n-side electrode n3 is an example of the “electrode on the first polarity side of the third semiconductor laser element” in the present invention.

An end face coating film (not shown) made of a dielectric material that controls the reflectance of the laser beam is formed on the front surface (emission end surface) 75a and the rear surface (reflection end surface) 75b of the GaN-based semiconductor laser element layer 75, respectively. ing. Thereby, in the third semiconductor laser element LD3, the light intensity of the laser light emitted from the emission end face 75a is made larger than the light intensity of the laser light emitted from the reflection end face 75b. A green laser beam having a wavelength of about 550 nm is emitted from the region (light emitting point) of the MQW active layer 73 in the vicinity of the ridge 74a.

The first semiconductor laser element LD1 is configured to have a length in the X direction that is shorter than that of the second semiconductor laser element LD2, and the second semiconductor laser element LD2 has a length in the X direction. It is configured to be shorter than the third semiconductor laser element LD3.

On the

connection electrodes

118, 128, and 138, the n-side electrode n1 of the first semiconductor laser element LD1 and the n-side of the second semiconductor laser element LD2, respectively, via the fusion layers 119, 129, and 139 made of solder. The electrode n2 and the n-side electrode n3 of the third semiconductor laser element LD3 are joined. Here, the front surface 106c of the submount 106 and the emission end faces 55a, 65a, and 75a of the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are disposed on the same plane. The

ridges

54a and 64a and the ridge 74a are arranged in parallel to each other.

One end of the Au wire W11 is bonded onto the first lead T1, and the other end of the Au wire W11 is bonded onto the upper surface of the p-side electrode p1 of the first semiconductor laser element LD1. Has been. Further, one end of the Au wire W12 is also bonded on the first lead T1, and the other end of the Au wire W12 is on the upper surface of the p-side electrode p2 of the second semiconductor laser element LD2. Bonded to. Further, one end of the Au wire W13 is also bonded on the first lead T1, and the other end of the Au wire W13 is exposed from the third semiconductor laser element LD3 when viewed from the Z direction. Bonding is performed on the upper surface of the connection electrode 138 formed. One end portion of the Au wire W2 is bonded onto the second lead T2, and the other end portion of the Au wire W2 is exposed from the first semiconductor laser element LD1 when viewed from the Z direction. Bonding is performed on the upper surface of the connection electrode 118. One end of the Au wire W31 is bonded onto the third lead T3, and the other end of the Au wire W31 is exposed from the second semiconductor laser element LD2 when viewed from the Z direction. Bonding is performed on the upper surface of the connection electrode 128. On the third lead T3, one end of the Au wire W32 is also bonded, and the other end of the Au wire W32 is on the upper surface of the p-side electrode p3 of the third semiconductor laser element LD3. Bonded to.

In the semiconductor laser device 400, the first lead T1 is provided to the p-side electrode p1 of the first semiconductor laser element LD1 and the second semiconductor laser element LD2 as shown in FIG. The p-side electrode p2 and the n-side electrode n3 of the third semiconductor laser element LD3 are electrically connected. The second lead T2 is electrically connected to the n-side electrode n1 of the first semiconductor laser element LD1, and the third lead T3 is connected to the n-side electrode n2 of the second semiconductor laser element LD2. And, it is electrically connected to the p-side electrode p3 of the third semiconductor laser element LD3. Other configurations of the semiconductor laser device 400 are the same as those of the semiconductor laser device 300.

In the semiconductor laser device 400, as in the semiconductor laser device 100, the three semiconductor laser elements LD1, LD2, and LD3 can be driven separately by applying a voltage to the leads T1, T2, and T3.

Further, in this semiconductor laser device 400, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are each configured separately, so that the light output of each semiconductor laser, etc. The resonator length (length in the X direction) can be easily adjusted according to the characteristics. Thereby, when using for a display apparatus etc., ideal white light can be obtained easily. Other effects of the semiconductor laser device 400 are the same as those of the semiconductor laser device 300.

(First Modification to Third Modification of Fourth Embodiment)
FIG. 17 is a table showing wiring states of the semiconductor laser elements LD1, LD2, and LD3 in the

semiconductor laser devices

410, 420, and 430 according to the first to third modifications of the fourth embodiment of the present invention. FIG. 18 is a wiring diagram of the semiconductor laser elements LD1, LD2, and LD3 in the semiconductor laser device 420.

In the semiconductor laser device 410, the connection destinations of the leads T1, T2, T3, and T4 and the p-side electrodes p1, p2, p3, and the n-side electrodes n1, n2, and n3 of the semiconductor laser elements LD1, LD2, and LD3 are Except for the difference, the semiconductor laser device 400 has the same configuration as that of the semiconductor laser device 400 of the fourth embodiment. The

semiconductor laser devices

420 and 430 are provided with the same photodiode PD1 as that of the semiconductor laser device 110 according to the first modification of the first embodiment with respect to the

semiconductor laser devices

400 and 410, respectively. Has the same configuration as that of the semiconductor laser device 400 of the fourth embodiment.

In the semiconductor laser device 410, as shown in FIG. 17, the p-side electrode p1 of the first semiconductor laser element LD1 is connected to the second lead T2, and the n-side electrode n1 is connected to the first lead T1. . The p-side electrode p2 of the second semiconductor laser element LD2 is connected to the third lead T3, and the n-side electrode n1 is connected to the first lead T1. The p-side electrode p3 of the third semiconductor laser element LD3 is connected to the first lead T1, and the n-side electrode n3 is connected to the third lead T3. Thereby, in the semiconductor laser device 410, referring to FIG. 5, the first semiconductor laser element LD1, the second semiconductor laser element LD2, and the third semiconductor laser element LD3 are connected to each other. As a result, also in this semiconductor laser device 410, as in the semiconductor laser device 100 according to the first embodiment, the three semiconductor laser elements LD1, LD2, and LD3 can be operated by the three leads T1, T2, and T3. .

In the semiconductor laser device 420, as shown in FIG. 17, the n-side electrode n1 of the first semiconductor laser element LD1 is connected to the fourth lead T4 via the package P, and the p-side electrode p1 is connected to the first lead T1. It is connected to the. The p-side electrode p2 of the second semiconductor laser element LD2 is connected to the first lead T1, and the n-side electrode n1 is connected to the third lead T3. The p-side electrode p3 of the third semiconductor laser element LD3 is connected to the third lead T3, and the n-side electrode n3 is connected to the first lead T1. The p-side electrode p4 of the photodiode PD1 is connected to the second lead T2, and the n-side electrode n4 is connected to the fourth lead T4 through the package P. Thereby, in the semiconductor laser device 420, as shown in FIG. 18, the first semiconductor laser element LD1, the second semiconductor laser element LD2, the third semiconductor laser element LD3, and the photodiode PD1 are connected to each other. As a result, in this semiconductor laser device 420 as well as the semiconductor laser device 110 according to the first modification of the first embodiment, the package P (fourth lead T4) and the three leads T1, T3, and T2 The three semiconductor laser elements LD1, LD2, and LD3 and the photodiode PD1 can be operated.

In the semiconductor laser device 430, as shown in FIG. 17, the p-side electrode p1 of the first semiconductor laser element LD1 is connected to the fourth lead T4 through the package P, and the n-side electrode n1 is connected to the first lead T1. It is connected to the. The p-side electrode p2 of the second semiconductor laser element LD2 is connected to the third lead T3, and the n-side electrode n1 is connected to the first lead T1. The p-side electrode p3 of the third semiconductor laser element LD3 is connected to the first lead T1, and the n-side electrode n3 is connected to the third lead T3. The p-side electrode p4 of the photodiode PD1 is connected to the second lead T2, and the n-side electrode n4 is connected to the fourth lead T4 through the package P. Thereby, in the semiconductor laser device 430, referring to FIG. 7, the first semiconductor laser element LD1, the second semiconductor laser element LD2, the third semiconductor laser element LD3, and the photodiode PD1 are respectively connected. As a result, also in this semiconductor laser device 430, as with the semiconductor laser device 110 according to the first modification of the first embodiment, the package P (fourth lead T4) and the three leads T1, T3, and T2 The three semiconductor laser elements LD1, LD2, and LD3 and the photodiode PD1 can be operated.

Other effects of the

semiconductor laser devices

410, 420, and 430 are the same as those of the semiconductor laser device 400.

(Fifth embodiment)
FIG. 19 is a configuration diagram of an optical pickup 1000 according to the fifth embodiment of the present invention. The optical pickup is an example of the “optical device” in the present invention.

As shown in FIG. 19, an optical pickup 1000 according to the fifth embodiment includes a semiconductor laser device 110 according to a first modification of the first embodiment, and an optical system 500 that adjusts the laser light emitted from the semiconductor laser device 110. And a light detection unit 600 that receives the laser light.

As shown in FIG. 19, the optical system 500 includes a polarization beam splitter (hereinafter abbreviated as polarization BS) 501, a collimator lens 502, a beam expander 503, a λ / 4 plate 504, an objective lens 505, a cylindrical lens 506, and An optical axis correction element 507 is provided.

The polarization BS 501 totally transmits the laser light emitted from the semiconductor laser device 110 and totally reflects the laser light returning from the optical disk DI. The collimator lens 502 converts the laser light transmitted through the polarization BS 501 into parallel light. The beam expander 503 includes a concave lens, a convex lens, and an actuator (not shown). The actuator corrects the wavefront state of the laser light emitted from the semiconductor laser device 110 by changing the distance between the concave lens and the convex lens in accordance with a servo signal from a servo circuit described later.

The λ / 4 plate 504 converts linearly polarized laser light converted into substantially parallel light by the collimator lens 502 into circularly polarized light. The λ / 4 plate 504 converts the circularly polarized laser beam returned from the optical disc DI into linearly polarized light. In this case, the polarization direction of the linearly polarized light is orthogonal to the polarization direction of the linearly polarized light of the laser light emitted from the semiconductor laser device 110. Thereby, the laser beam returning from the optical disk DI is almost totally reflected by the polarized light BS501. The objective lens 505 converges the laser light transmitted through the λ / 4 plate 504 on the surface (recording layer) of the optical disc DI. The objective lens 505 is moved in the focus direction, tracking direction, and tilt direction by an objective lens actuator (not shown) in accordance with servo signals (tracking servo signal, focus servo signal, and tilt servo signal) from a servo circuit described later. It has been made movable.

In addition, a cylindrical lens 506, an optical axis correction element 507, and a light detection unit 600 are arranged along the optical axis of the laser light totally reflected by the polarized light BS501. The cylindrical lens 506 imparts astigmatism to the incident laser light. The optical axis correction element 507 is configured by a diffraction grating, and a spot of zero-order diffracted light of each of blue-violet, red, and infrared laser beams that has passed through the cylindrical lens 506 is on a detection region of the light detection unit 600 described later. They are arranged to match.

The light detection unit 600 outputs a signal based on the intensity distribution of the received laser beam. Here, the light detection unit 600 has a detection area of a predetermined pattern so that a focus error signal, a tracking error signal, and a tilt error signal can be obtained together with the reproduction signal. Thus, the optical pickup 1000 according to the fifth embodiment of the present invention is configured.

The optical pickup 1000 can selectively emit red, infrared, and blue-violet laser light from the semiconductor laser elements LD1, LD2, and LD3 (see FIG. 4) in the semiconductor laser device 110. Laser light emitted from the semiconductor laser device 110 is adjusted by the polarization BS 501, the collimator lens 502, the beam expander 503, the λ / 4 plate 504, the objective lens 505, the cylindrical lens 506, and the optical axis correction element 507 as described above. Then, the light is irradiated onto the detection region of the light detection unit 600.

Here, when reproducing the information recorded on the optical disc DI, the recording on the optical disc DI is performed in a state where the intensity of the laser light emitted from each of the semiconductor laser elements LD1, LD2, and LD3 is controlled to be constant. The layer can be irradiated with laser light, and a reproduction signal output from the light detection unit 600 can be obtained. Here, in order to make the intensity of the laser light emitted from each of the semiconductor laser elements LD1, LD2, and LD3 constant, it is monitored by the photodiode PD1 in the semiconductor laser device 110 and applied between the leads T1, T3, and T4. The feedback control of the voltage is performed. Further, feedback control of the actuator of the beam expander 503 and the objective lens actuator that drives the objective lens 505 can be performed by the focus error signal, tracking error signal, and tilt error signal output from the light detection unit 600, respectively. .

When recording information on the optical disc DI, the optical disc DI is irradiated with laser light while controlling the intensity of the laser light emitted from each of the semiconductor laser elements LD1, LD2, and LD3 based on the information to be recorded. As a result, information can be recorded on the recording layer of the optical disc DI. Similarly to the above, feedback control is performed on the actuator of the beam expander 503 and the objective lens actuator that drives the objective lens 505 by the focus error signal, tracking error signal, and tilt error signal output from the light detection unit 600, respectively. be able to.

In this way, recording and reproduction on the optical disc DI can be performed using the optical pickup 1000 according to the fifth embodiment of the present invention.

In the optical pickup 1000 according to the fifth embodiment, since the semiconductor laser device 110 according to the first modification of the first embodiment is mounted, the optical pickup 1000 can be easily downsized. Other effects of the optical pickup 1000 are the same as the effects of the semiconductor laser device 110 according to the first modification of the first embodiment.

(Sixth embodiment)
FIG. 20 is a block diagram of an optical disc apparatus 2000 according to the sixth embodiment of the present invention. The optical disk device is an example of the “optical device” in the present invention.

As shown in FIG. 20, this optical disc apparatus 2000 includes an optical pickup 1000 according to the fifth embodiment, a drive system having a controller 1001 and a laser drive circuit 1002, a circuit system having a signal generation circuit 1003 and a servo circuit 1004, A disk drive motor 1005.

The controller 1001 receives recording data S1 generated based on information to be recorded on the optical disc DI. The controller 1001 outputs a signal S2 to the laser drive circuit 1002 and outputs a signal S7 to the servo circuit 1004 in response to the recording data S1 and a first output signal S5 from a signal generation circuit 1003 described later. Output. Further, as will be described later, the controller 1001 outputs the reproduction data S10 based on the first output signal S5. The laser drive circuit 1002 outputs a signal S3 for controlling the laser power emitted from the semiconductor laser device 300 in the optical pickup 1000 in response to the signal S2. That is, the semiconductor laser device 300 is driven by the controller 1001 and the laser drive circuit 1002.

In the optical pickup 1000, the optical disc DI is irradiated with a laser beam controlled according to the signal S3. In addition, a signal S 4 is output from the light detection unit 600 in the optical pickup 1000 toward the signal generation circuit 1003. Further, the optical system 500 (the actuator of the beam expander 503 and the objective lens actuator that drives the objective lens 505) in the optical pickup 1000 is controlled by a servo signal S8 from a servo circuit 1004 described later. The signal generation circuit 1003 amplifies and calculates the signal S4 output from the optical pickup 1000, and outputs a first output signal S5 including a reproduction signal to the controller 1001, and performs feedback control of the optical pickup 1000 and A second output signal S6 for controlling the rotation of the optical disk DI described later is output to the servo circuit 1004.

The servo circuit 1004 is a motor that controls the servo signal S8 that controls the optical system 500 in the optical pickup 1000 and the disk drive motor 1005 in accordance with the second output signal S6 and the control signal S7 from the signal generation circuit 1003 and the controller 1001. Servo signal S9 is output. The disk drive motor 1005 controls the rotation speed of the optical disk DI according to the motor servo signal S9.

Here, when reproducing information recorded on the optical disc DI, first, a laser having a wavelength to be irradiated by means for identifying the type (CD, DVD, BD, etc.) of the optical disc DI which is not described here. Light is selected. Next, a signal S2 is output from the controller 1001 to the laser drive circuit 1002 so that the intensity of the laser beam having a wavelength to be emitted from the semiconductor laser device 110 in the optical pickup 1000 is constant. Further, as described in the fifth embodiment, the function of the semiconductor laser device 110, the optical system 500, and the light detection unit 600 of the optical pickup 1000 allows the signal S4 including the reproduction signal to be generated from the light detection unit 600 as a signal generation circuit. The signal generation circuit 1003 outputs the first output signal S5 including the reproduction signal to the controller 1001. The controller 1001 processes the first output signal S5 to extract the reproduction signal recorded on the optical disc DI and output it as reproduction data S10. Using this reproduction data S10, for example, information such as video and audio recorded on the optical disc DI can be output to a monitor, a speaker, or the like. Further, feedback control of each unit is also performed based on the signal S4 from the light detection unit 600.

When recording information on the optical disc DI, first, laser light having a wavelength to be irradiated is selected by means for identifying the same type of optical disc DI (CD, DVD, .BR> AD, etc.) as described above. . Next, a signal S2 is output from the controller 1001 to the laser driving circuit 1002 in accordance with the recording data S1 corresponding to the information to be recorded. Furthermore, as described in the fifth embodiment, the semiconductor laser device 110, the optical system 500, and the light detection unit 600 of the optical pickup 1000 function to record information on the optical disc DI and Based on the signal S4, feedback control of each part is performed.

In this way, recording and reproduction on the optical disc DI can be performed using the optical disc apparatus 2000 according to the sixth embodiment of the present invention.

In the optical disc device 2000 according to the sixth embodiment, since the semiconductor laser device 110 according to the first modification of the first embodiment is mounted in the optical pickup 1000, the optical pickup 1000 can be easily downsized. Thereby, the optical disk device 2000 can be easily downsized. Other effects of the optical disc device 2000 are the same as those of the optical pickup 1000 according to the fifth embodiment.

(Seventh embodiment)
FIG. 21 is a configuration diagram of a projector device 3000 according to the seventh embodiment of the present invention. FIG. 22 is a timing chart of an image signal given to projector apparatus 3000. The projector device is an example of the “optical device” in the present invention.

As shown in FIG. 21, the projector device 3000 includes a semiconductor laser device 420 according to a second modification of the fourth embodiment of the present invention, and an optical system that is a modulation unit that modulates laser light emitted from the semiconductor laser device 420. 510, and a control unit 700 that controls the semiconductor laser device 420 and the optical system 510.

In the optical system 510, the laser light emitted from the semiconductor laser device 420 is converted into parallel light by the lens 511 and then incident on the light pipe 512.

The inner surface of the light pipe 512 is a mirror surface, and the laser light travels through the light pipe 512 while being repeatedly reflected by the inner surface of the light pipe 512. At this time, the intensity distribution of the laser light of each color emitted from the light pipe 512 is made uniform by the multiple reflection action in the light pipe 512. The laser light emitted from the light pipe 512 is incident on a digital micromirror device (DMD) 514 via a relay optical system 513.

The DMD 514 is composed of a group of minute mirrors arranged in a matrix. The DMD 514 expresses (modulates) the gradation of each pixel by switching the light reflection direction at each pixel position between a first direction A toward the projection lens 515 and a second direction B deviating from the projection lens 515. ) Function. Of the laser light incident on each pixel position, the light (ON light) reflected in the first direction A is incident on the projection lens 515 and projected onto the projection surface (screen SC). Further, the light (OFF light) reflected in the second direction B by the DMD 514 is absorbed by the light absorber 516 without entering the projection lens 515.

In the projector device 3000, the control unit 700 is controlled so that pulse power is supplied to the semiconductor laser device 420, whereby each semiconductor laser element LD1 (red semiconductor laser element) and LD2 (blue color) of the semiconductor laser device 420 is controlled. The semiconductor laser element) and the LD3 (green semiconductor laser element) (see FIG. 15) are configured to be divided in time series and periodically driven one by one. In addition, the control unit 700 causes the DMD 514 of the optical system 510 to synchronize with the driving states of the semiconductor laser elements LD1, LD2, and LD3, and to detect each pixel (red (R), blue (B), and green (G)). The light is modulated in accordance with the gradations.

Specifically, as shown in FIG. 22, the R signal related to the driving of the first semiconductor laser element LD1, the B signal related to the driving of the second semiconductor laser element LD2, and the driving of the third semiconductor laser element LD3. The G signal is supplied to the semiconductor laser elements LD1, LD2, and LD3 of the semiconductor laser device 420 by the control unit 700 in a state of being divided in time series so as not to overlap each other. Further, the B image signal, the G image signal, and the R image signal are respectively output from the control unit 700 to the DMD 514 in synchronization with the B signal, the G signal, and the R signal.

Accordingly, the blue light of the second semiconductor laser element LD2 is emitted based on the B signal in the timing chart shown in FIG. 22, and the blue light is modulated by the DMD 514 based on the B image signal at this timing. Is done. Further, the green light of the third semiconductor laser element LD3 is emitted based on the G signal output next to the B signal, and at this timing, the green light is modulated by the DMD 514 based on the G image signal. The Further, the red light of the first semiconductor laser element LD1 is emitted based on the R signal output next to the G signal, and at this timing, the red light is modulated by the DMD 514 based on the R image signal. The Thereafter, the blue light of the second semiconductor laser element LD2 is emitted based on the B signal output next to the R signal, and at this timing, the blue light is again emitted by the DMD 514 based on the B image signal. Modulated. By repeating the above operation, an image by laser light irradiation based on the B image signal, the G image signal, and the R image signal is projected onto the projection surface (screen SC). Thus, the projector device 3000 according to the seventh embodiment of the present invention is configured.

In the projector device 3000 according to the seventh embodiment, since the semiconductor laser device 420 according to the second modification of the fourth embodiment is mounted, the projector device 3000 can be easily downsized. The other effects of the projector device 3000 are the same as those of the semiconductor laser device 420 according to the second modification of the fourth embodiment.

In addition, it should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is shown not by the above description of the embodiments and examples but by the scope of claims for patent, and all modifications within the meaning and scope equivalent to the scope of claims for patent are included.

For example, in the first embodiment, each of the leads T1, T2, and T3 is insulated from the package P. However, the present invention is not limited to this, and any one lead is electrically connected to the package. May be.

In each modification of the first embodiment, the photodiode PD1 is connected to the second lead T2. However, the present invention is not limited to this, and the photodiode PD1 is connected to another lead T1 or T3. Also good. In this case, each Au wire connected to the lead T1 or T3 is wired to the package P.

In the first embodiment, the lead T4 (package P) is grounded. However, the present invention is not limited to this, and may be insulated from the ground.

In the first to third embodiments and the modifications thereof, the three-wavelength semiconductor laser element emitting three colors of red, infrared, and blue-violet is used. However, the present invention is not limited to this, and the fourth embodiment A three-wavelength semiconductor laser element that emits three colors of red, blue, and green may be used by using the material used in the embodiment and its modification. Similarly, each of the semiconductor laser elements LD1, LD2, and LD3 of the fourth embodiment and its modified examples uses the materials used in the first to third embodiments and its modified examples, so that red, infrared, and blue-violet colors can be obtained. A semiconductor laser element that emits light may be used.

In each of the fifth to seventh embodiments, a semiconductor laser device according to another embodiment (and its modification) may be mounted.

In each embodiment, the

submounts

106 and 116 are made of conductive n-type Si. However, the present invention is not limited to this, and may be made of an insulator such as high resistance Si or AlN. In this case, it is not necessary to form the insulating

films

107 and 117 formed on the upper surface.

11 n-type GaAs substrate (common semiconductor substrate)
100, 110, 120, 200, 300, 400, 410, 420, 430

Semiconductor laser device

101, 201 Three-wavelength

semiconductor laser element

106, 116

Submount

500, 510 Optical system 1000 Optical pickup (optical device)
2000 Optical disk device (optical device)
3000 Projector device (optical device)
LD1, LD2, LD3 Semiconductor laser element n1, n2, n3 n-side electrode n12 n-side electrode (shared electrode)
P package p1, p2, p3 p-side electrode PD1, PD2 light receiving element T1, T2, T3, T4 Lead (terminal)
W1, W11, W12, W13, W2, W31, W32, W4 Au wire

Claims

A first semiconductor laser element, a second semiconductor laser element, and a third semiconductor laser element;
A package in which the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are disposed;
A first terminal, a second terminal and a third terminal attached to the package and electrically insulated from each other;
The first terminal includes an electrode on the first polarity side of the first semiconductor laser element, an electrode on the first polarity side of the second semiconductor laser element, and an electrode on the third semiconductor laser element. Electrically connected to the electrode on the second polarity side;
The second terminal is electrically connected to the electrode on the second polarity side of the first semiconductor laser element;
The third terminal is electrically connected to the electrode on the second polarity side of the second semiconductor laser element and the electrode on the first polarity side of the third semiconductor laser element. Semiconductor laser device.
The semiconductor laser device according to claim 1, wherein any one of the first terminal, the second terminal, and the third terminal is electrically connected to the package.
A light receiving element disposed in the package;
A fourth terminal attached to the package and electrically insulated from the package;
A first electrode of the light receiving element is connected to the fourth terminal;
The semiconductor laser device according to claim 2, wherein the second electrode of the light receiving element is connected to the package.
At least one of the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element is bonded on the surface of the submount,
The semiconductor laser device according to claim 3, wherein the light receiving element is disposed on a surface of the submount.
The first semiconductor laser element and the second semiconductor laser element include a common semiconductor substrate,
The electrode on the first polarity side of the first semiconductor laser element and the electrode on the first polarity side of the second semiconductor laser element are shared on the back surface of the semiconductor substrate. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is integrally formed as an electrode.
The third semiconductor laser element is bonded onto the back surface of the semiconductor substrate such that the second polarity side electrode of the third semiconductor laser element and the shared electrode are opposed to each other. 5. The semiconductor laser device according to 5.
The third semiconductor laser element includes a semiconductor laser element layer made of a nitride semiconductor,
The semiconductor laser device according to claim 1, wherein the first terminal and the third terminal are electrically insulated from the package.
The first semiconductor laser element and the second semiconductor laser element include a semiconductor laser element layer made of a nitride-based semiconductor,
The semiconductor laser device according to claim 1, wherein the first terminal, the second terminal, and the third terminal are electrically insulated from the package.
6. The semiconductor laser device according to claim 5, wherein the common semiconductor substrate is a GaN substrate or a GaAs substrate.
The semiconductor laser device according to claim 1, wherein the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are bonded onto a surface of a submount.
A first semiconductor laser element, a second semiconductor laser element, and a third semiconductor laser element, and a package in which the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are arranged A semiconductor laser device having a first terminal, a second terminal, and a third terminal attached to the package;
An optical system for controlling laser light emitted from the semiconductor laser device,
The first terminal includes an electrode on the first polarity side of the first semiconductor laser element, an electrode on the first polarity side of the second semiconductor laser element, and an electrode on the third semiconductor laser element. Electrically connected to the electrode on the second polarity side;
The second terminal is electrically connected to the electrode on the second polarity side of the first semiconductor laser element;
The third terminal is electrically connected to the electrode on the second polarity side of the second semiconductor laser element and the electrode on the first polarity side of the third semiconductor laser element. , Light equipment.
12. The optical device according to claim 11, wherein any one of the first terminal, the second terminal, and the third terminal is electrically connected to the package.
A light receiving element disposed in the package;
A fourth terminal attached to the package and electrically insulated from the package;
The optical device according to claim 12, wherein a first electrode of the light receiving element is connected to the fourth terminal, and a second electrode of the light receiving element is connected to the package.
At least one of the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element is bonded on the surface of the submount,
The optical device according to claim 13, wherein the light receiving element is disposed on a surface of the submount.
The first semiconductor laser element and the second semiconductor laser element include a common semiconductor substrate,
The electrode on the first polarity side of the first semiconductor laser element and the electrode on the first polarity side of the second semiconductor laser element are shared on the back surface of the semiconductor substrate. The optical device according to claim 11, wherein the optical device is integrally formed as an electrode.
The third semiconductor laser element is bonded onto the back surface of the semiconductor substrate such that the second polarity side electrode of the third semiconductor laser element and the shared electrode are opposed to each other. 15. The optical device according to 15.
The third semiconductor laser element includes a semiconductor laser element layer made of a nitride semiconductor,
The optical device according to claim 11, wherein the first terminal and the third terminal are electrically insulated from the package.
The first semiconductor laser element and the second semiconductor laser element include a semiconductor laser element layer made of a nitride-based semiconductor,
The optical device according to claim 11, wherein the first terminal, the second terminal, and the third terminal are electrically insulated from the package.
The optical device according to claim 15, wherein the common semiconductor substrate is a GaN substrate or a GaAs substrate.
12. The optical device according to claim 11, wherein the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element are bonded on a surface of a submount.