JP2010016261A - 窒化物半導体レーザ素子 - Google Patents
窒化物半導体レーザ素子 Download PDFInfo
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- JP2010016261A JP2010016261A JP2008176167A JP2008176167A JP2010016261A JP 2010016261 A JP2010016261 A JP 2010016261A JP 2008176167 A JP2008176167 A JP 2008176167A JP 2008176167 A JP2008176167 A JP 2008176167A JP 2010016261 A JP2010016261 A JP 2010016261A
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- Prior art keywords
- layer
- nitride semiconductor
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- semiconductor laser
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 311
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 297
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000000203 mixture Substances 0.000 claims description 38
- 239000010410 layer Substances 0.000 description 668
- 238000005253 cladding Methods 0.000 description 83
- 239000010408 film Substances 0.000 description 61
- 238000000034 method Methods 0.000 description 42
- 239000000463 material Substances 0.000 description 31
- 230000010355 oscillation Effects 0.000 description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 21
- 230000000694 effects Effects 0.000 description 20
- 229910002704 AlGaN Inorganic materials 0.000 description 18
- 238000005530 etching Methods 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 10
- 238000005979 thermal decomposition reaction Methods 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000004549 pulsed laser deposition Methods 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008176167A JP2010016261A (ja) | 2008-07-04 | 2008-07-04 | 窒化物半導体レーザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008176167A JP2010016261A (ja) | 2008-07-04 | 2008-07-04 | 窒化物半導体レーザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010016261A true JP2010016261A (ja) | 2010-01-21 |
| JP2010016261A5 JP2010016261A5 (enrdf_load_stackoverflow) | 2011-01-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008176167A Pending JP2010016261A (ja) | 2008-07-04 | 2008-07-04 | 窒化物半導体レーザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010016261A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010080960A (ja) * | 2008-09-24 | 2010-04-08 | Palo Alto Research Center Inc | 半導体発光デバイス |
| WO2011105136A1 (ja) * | 2010-02-25 | 2011-09-01 | 三洋電機株式会社 | 半導体レーザ装置及び光装置 |
| WO2012127778A1 (ja) * | 2011-03-24 | 2012-09-27 | パナソニック株式会社 | 窒化物半導体発光素子 |
| EP2369697A3 (en) * | 2010-03-25 | 2013-03-13 | Nichia Corporation | Semiconductor laser element and method of manufacturing thereof |
| JP2019201185A (ja) * | 2018-05-18 | 2019-11-21 | 旭化成株式会社 | レーザダイオード |
| JP2020129653A (ja) * | 2019-02-08 | 2020-08-27 | シャープ株式会社 | 発光素子及びその製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319703A (ja) * | 2001-04-20 | 2002-10-31 | Ricoh Co Ltd | 半導体装置およびその作製方法 |
| JP2004128502A (ja) * | 2002-09-30 | 2004-04-22 | Lumileds Lighting Us Llc | トンネル接合を含む発光装置 |
| JP2004289157A (ja) * | 2003-03-20 | 2004-10-14 | Xerox Corp | レーザダイオード構造およびその製造方法 |
| JP2006041491A (ja) * | 2004-06-21 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
-
2008
- 2008-07-04 JP JP2008176167A patent/JP2010016261A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002319703A (ja) * | 2001-04-20 | 2002-10-31 | Ricoh Co Ltd | 半導体装置およびその作製方法 |
| JP2004128502A (ja) * | 2002-09-30 | 2004-04-22 | Lumileds Lighting Us Llc | トンネル接合を含む発光装置 |
| JP2004289157A (ja) * | 2003-03-20 | 2004-10-14 | Xerox Corp | レーザダイオード構造およびその製造方法 |
| JP2006041491A (ja) * | 2004-06-21 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010080960A (ja) * | 2008-09-24 | 2010-04-08 | Palo Alto Research Center Inc | 半導体発光デバイス |
| JP2015099944A (ja) * | 2008-09-24 | 2015-05-28 | パロ・アルト・リサーチ・センター・インコーポレーテッドＰａｌｏ Ａｌｔｏ Ｒｅｓｅａｒｃｈ Ｃｅｎｔｅｒ Ｉｎｃｏｒｐｏｒａｔｅｄ | 半導体発光デバイス |
| WO2011105136A1 (ja) * | 2010-02-25 | 2011-09-01 | 三洋電機株式会社 | 半導体レーザ装置及び光装置 |
| EP2369697A3 (en) * | 2010-03-25 | 2013-03-13 | Nichia Corporation | Semiconductor laser element and method of manufacturing thereof |
| WO2012127778A1 (ja) * | 2011-03-24 | 2012-09-27 | パナソニック株式会社 | 窒化物半導体発光素子 |
| CN103444021A (zh) * | 2011-03-24 | 2013-12-11 | 松下电器产业株式会社 | 氮化物半导体发光元件 |
| JPWO2012127778A1 (ja) * | 2011-03-24 | 2014-07-24 | パナソニック株式会社 | 窒化物半導体発光素子 |
| US8942269B2 (en) | 2011-03-24 | 2015-01-27 | Panasonic Corporation | Nitride semiconductor light-emitting device |
| CN103444021B (zh) * | 2011-03-24 | 2016-04-27 | 松下知识产权经营株式会社 | 氮化物半导体发光元件 |
| JP2019201185A (ja) * | 2018-05-18 | 2019-11-21 | 旭化成株式会社 | レーザダイオード |
| JP7185867B2 (ja) | 2018-05-18 | 2022-12-08 | 旭化成株式会社 | レーザダイオード |
| JP2020129653A (ja) * | 2019-02-08 | 2020-08-27 | シャープ株式会社 | 発光素子及びその製造方法 |
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