JP2010040771A5 - - Google Patents

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Publication number
JP2010040771A5
JP2010040771A5 JP2008202138A JP2008202138A JP2010040771A5 JP 2010040771 A5 JP2010040771 A5 JP 2010040771A5 JP 2008202138 A JP2008202138 A JP 2008202138A JP 2008202138 A JP2008202138 A JP 2008202138A JP 2010040771 A5 JP2010040771 A5 JP 2010040771A5
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JP
Japan
Prior art keywords
film
forming
semiconductor device
wiring
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008202138A
Other languages
English (en)
Japanese (ja)
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JP2010040771A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008202138A priority Critical patent/JP2010040771A/ja
Priority claimed from JP2008202138A external-priority patent/JP2010040771A/ja
Priority to US12/536,472 priority patent/US8110504B2/en
Publication of JP2010040771A publication Critical patent/JP2010040771A/ja
Publication of JP2010040771A5 publication Critical patent/JP2010040771A5/ja
Priority to US13/345,046 priority patent/US8647984B2/en
Pending legal-status Critical Current

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JP2008202138A 2008-08-05 2008-08-05 半導体装置の製造方法 Pending JP2010040771A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008202138A JP2010040771A (ja) 2008-08-05 2008-08-05 半導体装置の製造方法
US12/536,472 US8110504B2 (en) 2008-08-05 2009-08-05 Method of manufacturing semiconductor device
US13/345,046 US8647984B2 (en) 2008-08-05 2012-01-06 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008202138A JP2010040771A (ja) 2008-08-05 2008-08-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010040771A JP2010040771A (ja) 2010-02-18
JP2010040771A5 true JP2010040771A5 (enExample) 2011-09-22

Family

ID=42013006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008202138A Pending JP2010040771A (ja) 2008-08-05 2008-08-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2010040771A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101659469B1 (ko) * 2011-06-16 2016-09-23 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법, 반도체 장치, 반도체 장치의 제조 장치 및 기억 매체
WO2013153777A1 (ja) * 2012-04-11 2013-10-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置、半導体製造装置
JPWO2014013941A1 (ja) * 2012-07-18 2016-06-30 東京エレクトロン株式会社 半導体装置の製造方法
CN113088902B (zh) * 2021-04-12 2022-07-05 贵州大学 一种在原料氧化情况下制备单一相高锰硅薄膜的工艺方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121640A (ja) * 1986-11-11 1988-05-25 Sumitomo Metal Ind Ltd 肌焼鋼
JP4013999B2 (ja) * 1997-11-18 2007-11-28 日鉱金属株式会社 高純度Ｍｎ材料の製造方法
JP2001284678A (ja) * 2000-03-17 2001-10-12 Read Rite Corp スピンバルブ磁気抵抗効果素子
JP2001345325A (ja) * 2000-06-02 2001-12-14 Nec Kyushu Ltd 半導体装置の配線形成方法
JP2004052036A (ja) * 2002-07-19 2004-02-19 Kubota Corp 耐浸炭性にすぐれる加熱炉用部材
JP2004319834A (ja) * 2003-04-17 2004-11-11 Renesas Technology Corp 半導体装置およびその製造方法
JP2007059660A (ja) * 2005-08-25 2007-03-08 Sony Corp 半導体装置の製造方法および半導体装置
JP2007173511A (ja) * 2005-12-22 2007-07-05 Sony Corp 半導体装置の製造方法
JP5076482B2 (ja) * 2006-01-20 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4231055B2 (ja) * 2006-02-06 2009-02-25 株式会社東芝 半導体装置及びその製造方法
JP2006135363A (ja) * 2006-02-14 2006-05-25 Renesas Technology Corp 半導体装置および半導体装置の製造方法
US8916232B2 (en) * 2006-08-30 2014-12-23 Lam Research Corporation Method for barrier interface preparation of copper interconnect
JP4321570B2 (ja) * 2006-09-06 2009-08-26 ソニー株式会社 半導体装置の製造方法
WO2008049019A2 (en) * 2006-10-17 2008-04-24 Enthone Inc. Copper deposition for filling features in manufacture of microelectronic devices
JP5076452B2 (ja) * 2006-11-13 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5010265B2 (ja) * 2006-12-18 2012-08-29 株式会社東芝 半導体装置の製造方法
JP5127251B2 (ja) * 2007-02-01 2013-01-23 パナソニック株式会社 半導体装置の製造方法

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