JP2002343859A5 - - Google Patents
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- Publication number
- JP2002343859A5 JP2002343859A5 JP2001144957A JP2001144957A JP2002343859A5 JP 2002343859 A5 JP2002343859 A5 JP 2002343859A5 JP 2001144957 A JP2001144957 A JP 2001144957A JP 2001144957 A JP2001144957 A JP 2001144957A JP 2002343859 A5 JP2002343859 A5 JP 2002343859A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- metal
- layer
- groove
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 description 149
- 229910052751 metal Inorganic materials 0.000 description 133
- 239000002184 metal Substances 0.000 description 130
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 77
- 229910052802 copper Inorganic materials 0.000 description 77
- 239000010949 copper Substances 0.000 description 77
- 239000004065 semiconductor Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 35
- 239000011229 interlayer Substances 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 22
- 150000002736 metal compounds Chemical class 0.000 description 16
- 150000001875 compounds Chemical class 0.000 description 15
- 238000007747 plating Methods 0.000 description 10
- 229910052755 nonmetal Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001144957A JP2002343859A (ja) | 2001-05-15 | 2001-05-15 | 配線間の接続構造及びその製造方法 |
| US09/978,005 US6624516B2 (en) | 2001-05-15 | 2001-10-17 | Structure for connecting interconnect lines with interposed layer including metal layers and metallic compound layer |
| TW091101031A TW554478B (en) | 2001-05-15 | 2002-01-23 | Structure for connecting interconnect lines and method of manufacturing same |
| KR10-2002-0004093A KR100426904B1 (ko) | 2001-05-15 | 2002-01-24 | 전극간의 접속 구조 및 그 제조 방법 |
| US10/464,502 US6780769B2 (en) | 2001-05-15 | 2003-06-19 | Method of manufacturing structure for connecting interconnect lines including metal layer with thickness larger than thickness of metallic compound layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001144957A JP2002343859A (ja) | 2001-05-15 | 2001-05-15 | 配線間の接続構造及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002343859A JP2002343859A (ja) | 2002-11-29 |
| JP2002343859A5 true JP2002343859A5 (enExample) | 2008-12-04 |
Family
ID=18990834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001144957A Pending JP2002343859A (ja) | 2001-05-15 | 2001-05-15 | 配線間の接続構造及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6624516B2 (enExample) |
| JP (1) | JP2002343859A (enExample) |
| KR (1) | KR100426904B1 (enExample) |
| TW (1) | TW554478B (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004095611A (ja) * | 2002-08-29 | 2004-03-25 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| KR100457057B1 (ko) * | 2002-09-14 | 2004-11-10 | 삼성전자주식회사 | 금속막 형성 방법 |
| US20040175926A1 (en) * | 2003-03-07 | 2004-09-09 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor component having a barrier-lined opening |
| US20040245636A1 (en) * | 2003-06-06 | 2004-12-09 | International Business Machines Corporation | Full removal of dual damascene metal level |
| US7265038B2 (en) * | 2003-11-25 | 2007-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a multi-layer seed layer for improved Cu ECP |
| US6849541B1 (en) * | 2003-12-19 | 2005-02-01 | United Microelectronics Corp. | Method of fabricating a dual damascene copper wire |
| JP2005244178A (ja) * | 2004-01-26 | 2005-09-08 | Toshiba Corp | 半導体装置の製造方法 |
| KR101080401B1 (ko) * | 2004-04-23 | 2011-11-04 | 삼성전자주식회사 | 평판 표시장치의 접합구조체 및 그 형성방법과 이를구비하는 평판 표시장치 |
| JP4370206B2 (ja) * | 2004-06-21 | 2009-11-25 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| JP4224434B2 (ja) * | 2004-06-30 | 2009-02-12 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| DE102005023122A1 (de) * | 2005-05-19 | 2006-11-23 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit Schichtstapel und Verfahren |
| US7368379B2 (en) * | 2005-08-04 | 2008-05-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for semiconductor devices |
| US8308053B2 (en) * | 2005-08-31 | 2012-11-13 | Micron Technology, Inc. | Microfeature workpieces having alloyed conductive structures, and associated methods |
| KR101315173B1 (ko) | 2009-12-28 | 2013-10-08 | 후지쯔 가부시끼가이샤 | 배선 구조 및 그 형성 방법 |
| US8815671B2 (en) | 2010-09-28 | 2014-08-26 | International Business Machines Corporation | Use of contacts to create differential stresses on devices |
| US8460981B2 (en) | 2010-09-28 | 2013-06-11 | International Business Machines Corporation | Use of contacts to create differential stresses on devices |
| US8835305B2 (en) * | 2012-07-31 | 2014-09-16 | International Business Machines Corporation | Method of fabricating a profile control in interconnect structures |
| US9577023B2 (en) * | 2013-06-04 | 2017-02-21 | Globalfoundries Inc. | Metal wires of a stacked inductor |
| US9219033B2 (en) * | 2014-03-21 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via pre-fill on back-end-of-the-line interconnect layer |
| US10825724B2 (en) * | 2014-04-25 | 2020-11-03 | Taiwan Semiconductor Manufacturing Company | Metal contact structure and method of forming the same in a semiconductor device |
| US9418951B2 (en) * | 2014-05-15 | 2016-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure with composite barrier layer under redistribution layer and manufacturing method thereof |
| US9496225B1 (en) | 2016-02-08 | 2016-11-15 | International Business Machines Corporation | Recessed metal liner contact with copper fill |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751566A3 (en) | 1995-06-30 | 1997-02-26 | Ibm | Metal thin film barrier for electrical connections |
| JPH1167766A (ja) * | 1997-08-19 | 1999-03-09 | Sony Corp | 半導体装置の製造方法 |
| US6887353B1 (en) * | 1997-12-19 | 2005-05-03 | Applied Materials, Inc. | Tailored barrier layer which provides improved copper interconnect electromigration resistance |
| US6127258A (en) | 1998-06-25 | 2000-10-03 | Motorola Inc. | Method for forming a semiconductor device |
| JP2000124310A (ja) * | 1998-10-16 | 2000-04-28 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
| JP2000183064A (ja) | 1998-12-16 | 2000-06-30 | Matsushita Electronics Industry Corp | 半導体装置およびその製造方法 |
| JP2000323571A (ja) * | 1999-05-14 | 2000-11-24 | Sony Corp | 半導体装置の製造方法 |
| US6146517A (en) * | 1999-05-19 | 2000-11-14 | Infineon Technologies North America Corp. | Integrated circuits with copper metallization for interconnections |
| US6339258B1 (en) * | 1999-07-02 | 2002-01-15 | International Business Machines Corporation | Low resistivity tantalum |
| KR100301057B1 (ko) * | 1999-07-07 | 2001-11-01 | 윤종용 | 구리 배선층을 갖는 반도체 소자 및 그 제조방법 |
| JP2001053150A (ja) * | 1999-08-12 | 2001-02-23 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2001053151A (ja) | 1999-08-17 | 2001-02-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| US6323121B1 (en) * | 2000-05-12 | 2001-11-27 | Taiwan Semiconductor Manufacturing Company | Fully dry post-via-etch cleaning method for a damascene process |
| US6342448B1 (en) * | 2000-05-31 | 2002-01-29 | Taiwan Semiconductor Manufacturing Company | Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process |
-
2001
- 2001-05-15 JP JP2001144957A patent/JP2002343859A/ja active Pending
- 2001-10-17 US US09/978,005 patent/US6624516B2/en not_active Expired - Lifetime
-
2002
- 2002-01-23 TW TW091101031A patent/TW554478B/zh not_active IP Right Cessation
- 2002-01-24 KR KR10-2002-0004093A patent/KR100426904B1/ko not_active Expired - Fee Related
-
2003
- 2003-06-19 US US10/464,502 patent/US6780769B2/en not_active Expired - Lifetime
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