JP2002343859A - 配線間の接続構造及びその製造方法 - Google Patents

配線間の接続構造及びその製造方法

Info

Publication number
JP2002343859A
JP2002343859A JP2001144957A JP2001144957A JP2002343859A JP 2002343859 A JP2002343859 A JP 2002343859A JP 2001144957 A JP2001144957 A JP 2001144957A JP 2001144957 A JP2001144957 A JP 2001144957A JP 2002343859 A JP2002343859 A JP 2002343859A
Authority
JP
Japan
Prior art keywords
layer
metal
copper
copper wiring
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001144957A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002343859A5 (enExample
Inventor
Masahiko Fujisawa
雅彦 藤澤
Akihiko Osaki
明彦 大崎
Noboru Morimoto
昇 森本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001144957A priority Critical patent/JP2002343859A/ja
Priority to US09/978,005 priority patent/US6624516B2/en
Priority to TW091101031A priority patent/TW554478B/zh
Priority to KR10-2002-0004093A priority patent/KR100426904B1/ko
Publication of JP2002343859A publication Critical patent/JP2002343859A/ja
Priority to US10/464,502 priority patent/US6780769B2/en
Publication of JP2002343859A5 publication Critical patent/JP2002343859A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001144957A 2001-05-15 2001-05-15 配線間の接続構造及びその製造方法 Pending JP2002343859A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001144957A JP2002343859A (ja) 2001-05-15 2001-05-15 配線間の接続構造及びその製造方法
US09/978,005 US6624516B2 (en) 2001-05-15 2001-10-17 Structure for connecting interconnect lines with interposed layer including metal layers and metallic compound layer
TW091101031A TW554478B (en) 2001-05-15 2002-01-23 Structure for connecting interconnect lines and method of manufacturing same
KR10-2002-0004093A KR100426904B1 (ko) 2001-05-15 2002-01-24 전극간의 접속 구조 및 그 제조 방법
US10/464,502 US6780769B2 (en) 2001-05-15 2003-06-19 Method of manufacturing structure for connecting interconnect lines including metal layer with thickness larger than thickness of metallic compound layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001144957A JP2002343859A (ja) 2001-05-15 2001-05-15 配線間の接続構造及びその製造方法

Publications (2)

Publication Number Publication Date
JP2002343859A true JP2002343859A (ja) 2002-11-29
JP2002343859A5 JP2002343859A5 (enExample) 2008-12-04

Family

ID=18990834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001144957A Pending JP2002343859A (ja) 2001-05-15 2001-05-15 配線間の接続構造及びその製造方法

Country Status (4)

Country Link
US (2) US6624516B2 (enExample)
JP (1) JP2002343859A (enExample)
KR (1) KR100426904B1 (enExample)
TW (1) TW554478B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324676A (ja) * 2005-05-19 2006-11-30 Infineon Technologies Ag 積層構造を備えた集積回路構造およびその製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095611A (ja) * 2002-08-29 2004-03-25 Fujitsu Ltd 半導体装置およびその製造方法
KR100457057B1 (ko) * 2002-09-14 2004-11-10 삼성전자주식회사 금속막 형성 방법
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US20040245636A1 (en) * 2003-06-06 2004-12-09 International Business Machines Corporation Full removal of dual damascene metal level
US7265038B2 (en) * 2003-11-25 2007-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a multi-layer seed layer for improved Cu ECP
US6849541B1 (en) * 2003-12-19 2005-02-01 United Microelectronics Corp. Method of fabricating a dual damascene copper wire
JP2005244178A (ja) * 2004-01-26 2005-09-08 Toshiba Corp 半導体装置の製造方法
KR101080401B1 (ko) * 2004-04-23 2011-11-04 삼성전자주식회사 평판 표시장치의 접합구조체 및 그 형성방법과 이를구비하는 평판 표시장치
JP4370206B2 (ja) * 2004-06-21 2009-11-25 パナソニック株式会社 半導体装置及びその製造方法
JP4224434B2 (ja) * 2004-06-30 2009-02-12 パナソニック株式会社 半導体装置及びその製造方法
US7368379B2 (en) * 2005-08-04 2008-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer interconnect structure for semiconductor devices
US8308053B2 (en) * 2005-08-31 2012-11-13 Micron Technology, Inc. Microfeature workpieces having alloyed conductive structures, and associated methods
KR101315173B1 (ko) 2009-12-28 2013-10-08 후지쯔 가부시끼가이샤 배선 구조 및 그 형성 방법
US8815671B2 (en) 2010-09-28 2014-08-26 International Business Machines Corporation Use of contacts to create differential stresses on devices
US8460981B2 (en) 2010-09-28 2013-06-11 International Business Machines Corporation Use of contacts to create differential stresses on devices
US8835305B2 (en) * 2012-07-31 2014-09-16 International Business Machines Corporation Method of fabricating a profile control in interconnect structures
US9577023B2 (en) * 2013-06-04 2017-02-21 Globalfoundries Inc. Metal wires of a stacked inductor
US9219033B2 (en) * 2014-03-21 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Via pre-fill on back-end-of-the-line interconnect layer
US10825724B2 (en) * 2014-04-25 2020-11-03 Taiwan Semiconductor Manufacturing Company Metal contact structure and method of forming the same in a semiconductor device
US9418951B2 (en) * 2014-05-15 2016-08-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with composite barrier layer under redistribution layer and manufacturing method thereof
US9496225B1 (en) 2016-02-08 2016-11-15 International Business Machines Corporation Recessed metal liner contact with copper fill

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917790A (ja) * 1995-06-30 1997-01-17 Internatl Business Mach Corp <Ibm> 電気的相互接続用薄膜金属バリア層
WO1999033110A1 (en) * 1997-12-19 1999-07-01 Applied Materials, Inc. A tailored barrier layer which provides improved copper interconnect electromigration resistance
JP2000124310A (ja) * 1998-10-16 2000-04-28 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
WO2000070924A1 (en) * 1999-05-19 2000-11-23 Infineon Technologies North America Corp. Integrated circuits with copper matallization for interconnections
JP2000323571A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置の製造方法
JP2001044205A (ja) * 1999-07-07 2001-02-16 Samsung Electronics Co Ltd 銅配線層を有する半導体素子及びその製造方法
JP2001053150A (ja) * 1999-08-12 2001-02-23 Hitachi Ltd 半導体集積回路装置の製造方法
KR20010015082A (ko) * 1999-07-02 2001-02-26 포만 제프리 엘 저저항 탄탈륨

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167766A (ja) * 1997-08-19 1999-03-09 Sony Corp 半導体装置の製造方法
US6127258A (en) 1998-06-25 2000-10-03 Motorola Inc. Method for forming a semiconductor device
JP2000183064A (ja) 1998-12-16 2000-06-30 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2001053151A (ja) 1999-08-17 2001-02-23 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6323121B1 (en) * 2000-05-12 2001-11-27 Taiwan Semiconductor Manufacturing Company Fully dry post-via-etch cleaning method for a damascene process
US6342448B1 (en) * 2000-05-31 2002-01-29 Taiwan Semiconductor Manufacturing Company Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917790A (ja) * 1995-06-30 1997-01-17 Internatl Business Mach Corp <Ibm> 電気的相互接続用薄膜金属バリア層
WO1999033110A1 (en) * 1997-12-19 1999-07-01 Applied Materials, Inc. A tailored barrier layer which provides improved copper interconnect electromigration resistance
JP2000124310A (ja) * 1998-10-16 2000-04-28 Matsushita Electronics Industry Corp 半導体装置およびその製造方法
JP2000323571A (ja) * 1999-05-14 2000-11-24 Sony Corp 半導体装置の製造方法
WO2000070924A1 (en) * 1999-05-19 2000-11-23 Infineon Technologies North America Corp. Integrated circuits with copper matallization for interconnections
KR20010015082A (ko) * 1999-07-02 2001-02-26 포만 제프리 엘 저저항 탄탈륨
JP2001044205A (ja) * 1999-07-07 2001-02-16 Samsung Electronics Co Ltd 銅配線層を有する半導体素子及びその製造方法
JP2001053150A (ja) * 1999-08-12 2001-02-23 Hitachi Ltd 半導体集積回路装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006324676A (ja) * 2005-05-19 2006-11-30 Infineon Technologies Ag 積層構造を備えた集積回路構造およびその製造方法

Also Published As

Publication number Publication date
KR20020087338A (ko) 2002-11-22
US20030205825A1 (en) 2003-11-06
US6780769B2 (en) 2004-08-24
US6624516B2 (en) 2003-09-23
KR100426904B1 (ko) 2004-04-14
US20020171149A1 (en) 2002-11-21
TW554478B (en) 2003-09-21

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