JP2010013675A5 - - Google Patents

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Publication number
JP2010013675A5
JP2010013675A5 JP2008172489A JP2008172489A JP2010013675A5 JP 2010013675 A5 JP2010013675 A5 JP 2010013675A5 JP 2008172489 A JP2008172489 A JP 2008172489A JP 2008172489 A JP2008172489 A JP 2008172489A JP 2010013675 A5 JP2010013675 A5 JP 2010013675A5
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JP
Japan
Prior art keywords
chamber
ring
plasma cvd
electrode
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008172489A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010013675A (ja
JP5164107B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2008172489A priority Critical patent/JP5164107B2/ja
Priority claimed from JP2008172489A external-priority patent/JP5164107B2/ja
Priority to US13/001,062 priority patent/US20110177260A1/en
Priority to PCT/JP2009/061918 priority patent/WO2010001879A1/ja
Publication of JP2010013675A publication Critical patent/JP2010013675A/ja
Publication of JP2010013675A5 publication Critical patent/JP2010013675A5/ja
Application granted granted Critical
Publication of JP5164107B2 publication Critical patent/JP5164107B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008172489A 2008-07-01 2008-07-01 プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法 Expired - Fee Related JP5164107B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008172489A JP5164107B2 (ja) 2008-07-01 2008-07-01 プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法
US13/001,062 US20110177260A1 (en) 2008-07-01 2009-06-30 Plasma cvd device, method for depositing thin film, and method for producing magnetic recording medium
PCT/JP2009/061918 WO2010001879A1 (ja) 2008-07-01 2009-06-30 プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008172489A JP5164107B2 (ja) 2008-07-01 2008-07-01 プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法

Publications (3)

Publication Number Publication Date
JP2010013675A JP2010013675A (ja) 2010-01-21
JP2010013675A5 true JP2010013675A5 (enExample) 2011-01-27
JP5164107B2 JP5164107B2 (ja) 2013-03-13

Family

ID=41465973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008172489A Expired - Fee Related JP5164107B2 (ja) 2008-07-01 2008-07-01 プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法

Country Status (3)

Country Link
US (1) US20110177260A1 (enExample)
JP (1) JP5164107B2 (enExample)
WO (1) WO2010001879A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG190912A1 (en) * 2010-11-29 2013-07-31 Youtec Co Ltd Plasma cvd apparatus, magnetic recording medium and method for manufacturing the same
JP5608133B2 (ja) * 2011-06-14 2014-10-15 株式会社神戸製鋼所 磁気記録媒体用アルミニウム基板の製造方法
JP6229592B2 (ja) * 2014-05-21 2017-11-15 トヨタ自動車株式会社 プラズマｃｖｄ装置
WO2015194031A1 (ja) * 2014-06-20 2015-12-23 株式会社ユーテック プラズマｃｖｄ装置及び磁気記録媒体の製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1160895A (en) * 1965-08-25 1969-08-06 Rank Xerox Ltd Coating Surfaces by Vapour Deposition
US4859908A (en) * 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
EP0336979B1 (en) * 1987-10-14 1995-05-24 The Furukawa Electric Co., Ltd. Apparatus for thin film formation by plasma cvd
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
JP3122601B2 (ja) * 1995-06-15 2001-01-09 東京エレクトロン株式会社 プラズマ成膜方法及びその装置
JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法
JPH1192968A (ja) * 1997-09-17 1999-04-06 Citizen Watch Co Ltd ドライエッチング装置とプラズマ化学的気相堆積装置
US6189484B1 (en) * 1999-03-05 2001-02-20 Applied Materials Inc. Plasma reactor having a helicon wave high density plasma source
JP3305654B2 (ja) * 1998-05-27 2002-07-24 三菱化学株式会社 プラズマｃｖｄ装置および記録媒体
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP2000226670A (ja) * 1999-02-02 2000-08-15 Mitsubishi Chemicals Corp Ｃｖｄ装置および磁気記録媒体の製造方法
JP3977962B2 (ja) * 1999-08-30 2007-09-19 松下電器産業株式会社 プラズマ処理装置及び方法
US20020170678A1 (en) * 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US20030087488A1 (en) * 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
JP3932886B2 (ja) * 2001-12-19 2007-06-20 株式会社島津製作所 誘導結合型プラズマ生成装置およびプラズマ処理装置
JP2005136027A (ja) * 2003-10-29 2005-05-26 Canon Inc プラズマ処理装置
JP2006278219A (ja) * 2005-03-30 2006-10-12 Utec:Kk Ｉｃｐ回路、プラズマ処理装置及びプラズマ処理方法
JP4747665B2 (ja) * 2005-05-11 2011-08-17 大日本印刷株式会社 成膜装置及び成膜方法
US7662723B2 (en) * 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
JP2008031521A (ja) * 2006-07-28 2008-02-14 Sony Corp ロールツーロール型のプラズマ真空処理装置

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