JP5623008B2 - プラズマ装置 - Google Patents
プラズマ装置 Download PDFInfo
- Publication number
- JP5623008B2 JP5623008B2 JP2008172951A JP2008172951A JP5623008B2 JP 5623008 B2 JP5623008 B2 JP 5623008B2 JP 2008172951 A JP2008172951 A JP 2008172951A JP 2008172951 A JP2008172951 A JP 2008172951A JP 5623008 B2 JP5623008 B2 JP 5623008B2
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- plasma
- coil
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- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 17
- 239000012809 cooling fluid Substances 0.000 claims description 16
- 230000035515 penetration Effects 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 72
- 238000004140 cleaning Methods 0.000 description 9
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001449 potential sputter etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Epidemiology (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Public Health (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
本発明の実施形態は、主に、処理チャンバへ導入されるプラズマを生成するためのリモートプラズマソースに関する。
プラズマプロセスは、様々なデバイス製造の応用において数多くの製造ステップのために用いられる。ソーラーパネル若しくはフラットパネルディスプレイのために、基板のサイズは最近増大しつつある。基板のサイズが大きくなるにつれ、より多くのプラズマが必要となる。更に、処理の間、材料物質が処理チャンバの露出部分に堆積するかもしれない。その材料物質が溜まると、その物質が剥がれ落ち基板を汚染する危険性がある。プロセスチャンバを定期的にクリーニングすることにより、不要な堆積がチャンバから取り除かれ基板の汚染を少なくする。
Claims (1)
- サセプタを内部に配置したプロセスチャンバと、
RFマッチングネットワークと、
前記プロセスチャンバの外部に配置され、前記プロセスチャンバおよび前記RFマッチングネットワークに結合されたリモートプラズマソースとを含み、
前記リモートプラズマソースは、
少なくとも1つの導電性のウォールと、前記少なくとも1つのウォール内に延びる少なくとも1つの冷却通路とを有するエンクロージャと、
前記少なくとも1つの導電性のウォールに隣接する第1のウォールで前記エンクロージャに結合するガス供給口と、
前記少なくとも1つの導電性のウォールに隣接し、前記第1のウォールに対向する第2のウォールで前記エンクロージャに結合するプラズマ排出口と、
前記プラズマ排出口の周りに巻かれた冷却チューブと、
前記エンクロージャを貫通して延び、前記第1のウォールの外側に配置された第1位置から、前記第2のウォールの外側の第2位置まで延びる、金属コイルを含み、前記金属コイルは、冷却流体供給口と排出口に結合され、前記RFマッチングネットワークは、前記第1位置及び前記第2位置で前記金属コイルに結合され、前記エンクロージャ内で前記金属コイルの外側を前記冷却流体の方向とは反対方向に流れるガスからプラズマを点火し、前記金属コイルはRF電流の貫通深さよりも厚い所要の厚さを有するプラズマ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94829007P | 2007-07-06 | 2007-07-06 | |
US60/948,290 | 2007-07-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009016837A JP2009016837A (ja) | 2009-01-22 |
JP5623008B2 true JP5623008B2 (ja) | 2014-11-12 |
Family
ID=40212583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008172951A Expired - Fee Related JP5623008B2 (ja) | 2007-07-06 | 2008-07-02 | プラズマ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8075734B2 (ja) |
JP (1) | JP5623008B2 (ja) |
KR (1) | KR100971847B1 (ja) |
CN (2) | CN101338413A (ja) |
TW (1) | TWI388244B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007536474A (ja) * | 2004-05-06 | 2007-12-13 | ナタサ、エンタープライジズ、リミテッド | 自動モーター駆動インラインピストンポンプ潤滑装置 |
US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
US9017486B2 (en) | 2010-09-09 | 2015-04-28 | International Business Machines Corporation | Deposition chamber cleaning method including stressed cleaning layer |
US9398680B2 (en) | 2010-12-03 | 2016-07-19 | Lam Research Corporation | Immersible plasma coil assembly and method for operating the same |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
CN103088315A (zh) * | 2011-11-03 | 2013-05-08 | 无锡华润上华科技有限公司 | 化学气相淀积设备 |
CN103456660A (zh) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | 等离子体增强清洗装置、系统及清洗晶圆的方法 |
CN103572253B (zh) * | 2012-07-30 | 2016-02-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室和具有它的半导体设备 |
CN103547054A (zh) * | 2013-10-21 | 2014-01-29 | 芜湖鼎恒材料技术有限公司 | 一种等离子处理设备冷却用连接管 |
JP6582391B2 (ja) | 2014-11-05 | 2019-10-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR20160070929A (ko) * | 2014-12-10 | 2016-06-21 | 삼성디스플레이 주식회사 | 표시 장치 제조 장치 및 표시 장치 제조 방법 |
CN106435470A (zh) * | 2016-11-09 | 2017-02-22 | 上海华力微电子有限公司 | 一种实现自动清洗的烘烤腔结构及其自动清洗方法 |
CN106783691A (zh) * | 2016-12-30 | 2017-05-31 | 昆山龙腾光电有限公司 | 一种离子传输装置及气相沉积设备 |
TWI713414B (zh) * | 2017-10-23 | 2020-12-11 | 日商國際電氣股份有限公司 | 基板處理裝置、半導體裝置之製造方法及記錄媒體 |
WO2020110262A1 (ja) * | 2018-11-29 | 2020-06-04 | カンケンテクノ株式会社 | プラズマ生成ユニットおよびこれを用いた排ガス除害装置 |
GB2582948B (en) * | 2019-04-10 | 2021-12-08 | Thermo Fisher Scient Bremen Gmbh | Plasma source chamber for a spectrometer |
CN110158056A (zh) * | 2019-05-17 | 2019-08-23 | 中国科学院宁波材料技术与工程研究所 | 真空镀膜装置 |
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US4362632A (en) * | 1974-08-02 | 1982-12-07 | Lfe Corporation | Gas discharge apparatus |
US4810935A (en) * | 1985-05-03 | 1989-03-07 | The Australian National University | Method and apparatus for producing large volume magnetoplasmas |
US4623417A (en) | 1985-08-23 | 1986-11-18 | Texas Instruments Incorporated | Magnetron plasma reactor |
US5036252A (en) * | 1988-04-26 | 1991-07-30 | Hauzer Holding Bv | Radio frequency ion beam source |
US4988644A (en) * | 1989-05-23 | 1991-01-29 | Texas Instruments Incorporated | Method for etching semiconductor materials using a remote plasma generator |
JPH06256958A (ja) * | 1993-03-04 | 1994-09-13 | Anelva Corp | 低圧高温プラズマを利用した薄膜の形成方法および装置 |
US5309063A (en) * | 1993-03-04 | 1994-05-03 | David Sarnoff Research Center, Inc. | Inductive coil for inductively coupled plasma production apparatus |
JPH07230898A (ja) * | 1994-02-17 | 1995-08-29 | Sumitomo Metal Ind Ltd | プラズマ処理装置 |
JP3473121B2 (ja) * | 1994-09-14 | 2003-12-02 | ソニー株式会社 | プラズマcvd装置およびプラズマcvd方法 |
JPH09219295A (ja) * | 1996-01-30 | 1997-08-19 | Applied Materials Inc | 液冷式リモートプラズマアプリケータ |
US6144984A (en) | 1996-07-22 | 2000-11-07 | Debenedictis; Erik P. | Method and apparatus for controlling connected computers without programming |
US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
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US6109206A (en) | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
US6116186A (en) * | 1998-03-19 | 2000-09-12 | Applied Materials, Inc. | Apparatus for cooling a plasma generator |
US6080287A (en) * | 1998-05-06 | 2000-06-27 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US6436303B1 (en) | 1999-07-21 | 2002-08-20 | Applied Materials, Inc. | Film removal employing a remote plasma source |
US6603269B1 (en) | 2000-06-13 | 2003-08-05 | Applied Materials, Inc. | Resonant chamber applicator for remote plasma source |
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JP4175021B2 (ja) * | 2002-05-01 | 2008-11-05 | 株式会社島津製作所 | 高周波誘導結合プラズマ生成装置およびプラズマ処理装置 |
JP2004165345A (ja) | 2002-11-12 | 2004-06-10 | Pearl Kogyo Kk | 堆積チャンバーのリモートプラズマ方式クリーニング装置 |
CN1260387C (zh) | 2004-01-08 | 2006-06-21 | 西安交通大学 | 热等离子体雾态气化制备薄膜的装置 |
US20060081185A1 (en) * | 2004-10-15 | 2006-04-20 | Justin Mauck | Thermal management of dielectric components in a plasma discharge device |
CN1812687B (zh) | 2006-02-24 | 2011-05-11 | 清华大学 | 大气压射频放电高速冷等离子体阵列发生器 |
-
2008
- 2008-05-02 US US12/114,127 patent/US8075734B2/en not_active Expired - Fee Related
- 2008-06-02 CN CNA2008101115064A patent/CN101338413A/zh active Pending
- 2008-06-02 CN CN201410459032.8A patent/CN104362066B/zh not_active Expired - Fee Related
- 2008-06-11 TW TW097121729A patent/TWI388244B/zh not_active IP Right Cessation
- 2008-06-30 KR KR1020080062880A patent/KR100971847B1/ko not_active IP Right Cessation
- 2008-07-02 JP JP2008172951A patent/JP5623008B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100971847B1 (ko) | 2010-07-22 |
CN104362066B (zh) | 2017-06-20 |
CN104362066A (zh) | 2015-02-18 |
TWI388244B (zh) | 2013-03-01 |
JP2009016837A (ja) | 2009-01-22 |
TW200920193A (en) | 2009-05-01 |
KR20090004627A (ko) | 2009-01-12 |
US20090008239A1 (en) | 2009-01-08 |
CN101338413A (zh) | 2009-01-07 |
US8075734B2 (en) | 2011-12-13 |
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