JP2009543946A5 - - Google Patents

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Publication number
JP2009543946A5
JP2009543946A5 JP2009519518A JP2009519518A JP2009543946A5 JP 2009543946 A5 JP2009543946 A5 JP 2009543946A5 JP 2009519518 A JP2009519518 A JP 2009519518A JP 2009519518 A JP2009519518 A JP 2009519518A JP 2009543946 A5 JP2009543946 A5 JP 2009543946A5
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JP
Japan
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sic
aln
substrate
roy
kia
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Pending
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JP2009519518A
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English (en)
Japanese (ja)
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JP2009543946A (ja
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Priority claimed from US11/484,691 external-priority patent/US7371282B2/en
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Publication of JP2009543946A publication Critical patent/JP2009543946A/ja
Publication of JP2009543946A5 publication Critical patent/JP2009543946A5/ja
Pending legal-status Critical Current

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JP2009519518A 2006-07-12 2007-07-12 ワイドバンドギャップ半導体材料 Pending JP2009543946A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/484,691 US7371282B2 (en) 2006-07-12 2006-07-12 Solid solution wide bandgap semiconductor materials
PCT/US2007/015843 WO2008008407A1 (en) 2006-07-12 2007-07-12 Wide bandgap semiconductor materials

Publications (2)

Publication Number Publication Date
JP2009543946A JP2009543946A (ja) 2009-12-10
JP2009543946A5 true JP2009543946A5 (enExample) 2010-08-26

Family

ID=38923542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009519518A Pending JP2009543946A (ja) 2006-07-12 2007-07-12 ワイドバンドギャップ半導体材料

Country Status (4)

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US (2) US7371282B2 (enExample)
EP (1) EP2047013A4 (enExample)
JP (1) JP2009543946A (enExample)
WO (1) WO2008008407A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials
JP5621199B2 (ja) 2008-04-24 2014-11-05 住友電気工業株式会社 Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP2009280484A (ja) * 2008-04-24 2009-12-03 Sumitomo Electric Ind Ltd Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP2009280903A (ja) 2008-04-24 2009-12-03 Sumitomo Electric Ind Ltd Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
US8008181B2 (en) * 2008-08-22 2011-08-30 The Regents Of The University Of California Propagation of misfit dislocations from buffer/Si interface into Si
US8278666B1 (en) 2009-09-25 2012-10-02 Northrop Grumman Systems Corporation Method and apparatus for growing high purity 2H-silicon carbide
US20170243628A1 (en) * 2016-02-22 2017-08-24 Mediatek Inc. Termination topology of memory system and associated memory module and control method
CN106637411B (zh) * 2016-12-22 2019-04-05 苏州奥趋光电技术有限公司 一种氮化铝单晶生长方法
CN110515141A (zh) * 2019-08-19 2019-11-29 扬州霞光光学仪器有限公司 碳化硅光学镜的镀膜工艺
US11942919B2 (en) * 2021-01-11 2024-03-26 Raytheon Company Strain compensated rare earth group III-nitride heterostructures

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JP3145575B2 (ja) * 1994-09-01 2001-03-12 京セラ株式会社 セラミック抵抗体
DE69527236T2 (de) * 1994-09-16 2003-03-20 Sumitomo Electric Industries, Ltd. Mehrschichtfilm aus ultrafeinen Partikeln und harter Verbundwerkstoff für Werkzeuge, die diesen Film enthalten
US5552088A (en) * 1994-10-18 1996-09-03 Pottier; Charles Non-ozone depleting malodorous composition of matter and warning system
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US7371282B2 (en) * 2006-07-12 2008-05-13 Northrop Grumman Corporation Solid solution wide bandgap semiconductor materials

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