JP2009543946A - ワイドバンドギャップ半導体材料 - Google Patents
ワイドバンドギャップ半導体材料 Download PDFInfo
- Publication number
- JP2009543946A JP2009543946A JP2009519518A JP2009519518A JP2009543946A JP 2009543946 A JP2009543946 A JP 2009543946A JP 2009519518 A JP2009519518 A JP 2009519518A JP 2009519518 A JP2009519518 A JP 2009519518A JP 2009543946 A JP2009543946 A JP 2009543946A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- aln
- substrate
- thin film
- alloy thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 title claims description 16
- 239000000956 alloy Substances 0.000 claims abstract description 77
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 77
- 239000010409 thin film Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 16
- 238000007740 vapor deposition Methods 0.000 claims abstract description 10
- 239000007858 starting material Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 239000000872 buffer Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 126
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 120
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 23
- 238000005229 chemical vapour deposition Methods 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/484,691 US7371282B2 (en) | 2006-07-12 | 2006-07-12 | Solid solution wide bandgap semiconductor materials |
| PCT/US2007/015843 WO2008008407A1 (en) | 2006-07-12 | 2007-07-12 | Wide bandgap semiconductor materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009543946A true JP2009543946A (ja) | 2009-12-10 |
| JP2009543946A5 JP2009543946A5 (enExample) | 2010-08-26 |
Family
ID=38923542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009519518A Pending JP2009543946A (ja) | 2006-07-12 | 2007-07-12 | ワイドバンドギャップ半導体材料 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7371282B2 (enExample) |
| EP (1) | EP2047013A4 (enExample) |
| JP (1) | JP2009543946A (enExample) |
| WO (1) | WO2008008407A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024500970A (ja) * | 2021-01-11 | 2024-01-10 | レイセオン カンパニー | ひずみ補償された希土類ｉｉｉ族窒化物ヘテロ構造 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7371282B2 (en) * | 2006-07-12 | 2008-05-13 | Northrop Grumman Corporation | Solid solution wide bandgap semiconductor materials |
| JP2009280484A (ja) * | 2008-04-24 | 2009-12-03 | Sumitomo Electric Ind Ltd | Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ |
| JP2009280903A (ja) | 2008-04-24 | 2009-12-03 | Sumitomo Electric Ind Ltd | Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ |
| JP5621199B2 (ja) | 2008-04-24 | 2014-11-05 | 住友電気工業株式会社 | Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ |
| US8008181B2 (en) * | 2008-08-22 | 2011-08-30 | The Regents Of The University Of California | Propagation of misfit dislocations from buffer/Si interface into Si |
| US8278666B1 (en) | 2009-09-25 | 2012-10-02 | Northrop Grumman Systems Corporation | Method and apparatus for growing high purity 2H-silicon carbide |
| US20170243628A1 (en) * | 2016-02-22 | 2017-08-24 | Mediatek Inc. | Termination topology of memory system and associated memory module and control method |
| CN106637411B (zh) * | 2016-12-22 | 2019-04-05 | 苏州奥趋光电技术有限公司 | 一种氮化铝单晶生长方法 |
| CN110515141A (zh) * | 2019-08-19 | 2019-11-29 | 扬州霞光光学仪器有限公司 | 碳化硅光学镜的镀膜工艺 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11220166A (ja) * | 1998-01-30 | 1999-08-10 | Toshiba Corp | 光半導体装置 |
| JPH11246297A (ja) * | 1998-03-05 | 1999-09-14 | Hitachi Cable Ltd | 窒化物系化合物半導体結晶の成長方法 |
| JP2004532513A (ja) * | 2001-02-23 | 2004-10-21 | ニトロネックス・コーポレーション | 熱伝導性領域を含む窒化ガリウム材料 |
| JP2005506695A (ja) * | 2001-10-16 | 2005-03-03 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステート ユニバーシティ | 四元ワイドバンドギャップ半導体の低温エピタキシャル成長 |
| JP2007504081A (ja) * | 2003-08-28 | 2007-03-01 | ケープ シミュレイションズ， インコーポレイテッド | 高純度結晶成長 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2237699A1 (de) * | 1972-07-31 | 1974-02-21 | Linde Ag | Behaeltersystem zur lagerung und/oder zum transport von tiefsiedenden fluessiggasen |
| US3979271A (en) * | 1973-07-23 | 1976-09-07 | Westinghouse Electric Corporation | Deposition of solid semiconductor compositions and novel semiconductor materials |
| JP3145575B2 (ja) * | 1994-09-01 | 2001-03-12 | 京セラ株式会社 | セラミック抵抗体 |
| US5700551A (en) * | 1994-09-16 | 1997-12-23 | Sumitomo Electric Industries, Ltd. | Layered film made of ultrafine particles and a hard composite material for tools possessing the film |
| US5552088A (en) * | 1994-10-18 | 1996-09-03 | Pottier; Charles | Non-ozone depleting malodorous composition of matter and warning system |
| JP3284026B2 (ja) * | 1995-08-14 | 2002-05-20 | 株式会社ケー・エフ・シー | ロックボルト落下防止金具 |
| JP3876473B2 (ja) * | 1996-06-04 | 2007-01-31 | 住友電気工業株式会社 | 窒化物単結晶及びその製造方法 |
| DE19740793C2 (de) * | 1997-09-17 | 2003-03-20 | Bosch Gmbh Robert | Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens |
| US6214108B1 (en) * | 1998-05-19 | 2001-04-10 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same |
| JP4352473B2 (ja) * | 1998-06-26 | 2009-10-28 | ソニー株式会社 | 半導体装置の製造方法 |
| US6086672A (en) * | 1998-10-09 | 2000-07-11 | Cree, Inc. | Growth of bulk single crystals of aluminum nitride: silicon carbide alloys |
| US6829273B2 (en) * | 1999-07-16 | 2004-12-07 | Agilent Technologies, Inc. | Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same |
| US6844227B2 (en) * | 2000-12-26 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Semiconductor devices and method for manufacturing the same |
| US6761123B2 (en) * | 2001-05-25 | 2004-07-13 | Mh Systems | Infusion of combustion gases into ballast water preferably under less than atmospheric pressure to synergistically kill harmful aquatic nuisance species by simultaneous hypercapnia, hypoxia and acidic ph level |
| WO2004025707A2 (en) * | 2002-09-13 | 2004-03-25 | Arizona Board Of Regents | Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of sicain |
| US6763699B1 (en) * | 2003-02-06 | 2004-07-20 | The United States Of America As Represented By The Administrator Of Natural Aeronautics And Space Administration | Gas sensors using SiC semiconductors and method of fabrication thereof |
| US7371282B2 (en) * | 2006-07-12 | 2008-05-13 | Northrop Grumman Corporation | Solid solution wide bandgap semiconductor materials |
-
2006
- 2006-07-12 US US11/484,691 patent/US7371282B2/en not_active Expired - Fee Related
-
2007
- 2007-07-12 EP EP07796798A patent/EP2047013A4/en not_active Withdrawn
- 2007-07-12 JP JP2009519518A patent/JP2009543946A/ja active Pending
- 2007-07-12 WO PCT/US2007/015843 patent/WO2008008407A1/en not_active Ceased
-
2008
- 2008-04-18 US US12/081,636 patent/US20080206121A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11220166A (ja) * | 1998-01-30 | 1999-08-10 | Toshiba Corp | 光半導体装置 |
| JPH11246297A (ja) * | 1998-03-05 | 1999-09-14 | Hitachi Cable Ltd | 窒化物系化合物半導体結晶の成長方法 |
| JP2004532513A (ja) * | 2001-02-23 | 2004-10-21 | ニトロネックス・コーポレーション | 熱伝導性領域を含む窒化ガリウム材料 |
| JP2005506695A (ja) * | 2001-10-16 | 2005-03-03 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステート ユニバーシティ | 四元ワイドバンドギャップ半導体の低温エピタキシャル成長 |
| JP2007504081A (ja) * | 2003-08-28 | 2007-03-01 | ケープ シミュレイションズ， インコーポレイテッド | 高純度結晶成長 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024500970A (ja) * | 2021-01-11 | 2024-01-10 | レイセオン カンパニー | ひずみ補償された希土類ｉｉｉ族窒化物ヘテロ構造 |
| JP7648237B2 (ja) | 2021-01-11 | 2025-03-18 | レイセオン カンパニー | ひずみ補償された希土類ｉｉｉ族窒化物ヘテロ構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008008407A1 (en) | 2008-01-17 |
| EP2047013A1 (en) | 2009-04-15 |
| EP2047013A4 (en) | 2011-07-20 |
| US7371282B2 (en) | 2008-05-13 |
| US20080011223A1 (en) | 2008-01-17 |
| US20080206121A1 (en) | 2008-08-28 |
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