JP2009543339A5 - - Google Patents

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Publication number
JP2009543339A5
JP2009543339A5 JP2009518165A JP2009518165A JP2009543339A5 JP 2009543339 A5 JP2009543339 A5 JP 2009543339A5 JP 2009518165 A JP2009518165 A JP 2009518165A JP 2009518165 A JP2009518165 A JP 2009518165A JP 2009543339 A5 JP2009543339 A5 JP 2009543339A5
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JP
Japan
Prior art keywords
catalyst
dielectric material
bound
iii
dielectric constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009518165A
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English (en)
Japanese (ja)
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JP2009543339A (ja
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Publication date
Priority claimed from US11/475,206 external-priority patent/US7807219B2/en
Application filed filed Critical
Publication of JP2009543339A publication Critical patent/JP2009543339A/ja
Publication of JP2009543339A5 publication Critical patent/JP2009543339A5/ja
Ceased legal-status Critical Current

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JP2009518165A 2006-06-27 2007-06-21 エッチング損傷を受けた低誘電率の誘電材料（ｌｏｗ−ｋｄｉｅｌｅｃｔｒｉｃｍａｔｅｒｉａｌｓ）を修復し且つその強度を回復する方法 Ceased JP2009543339A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/475,206 US7807219B2 (en) 2006-06-27 2006-06-27 Repairing and restoring strength of etch-damaged low-k dielectric materials
PCT/US2007/014435 WO2008002443A1 (en) 2006-06-27 2007-06-21 Repairing and restoring strength of etch-damaged low-k dielectric materials

Publications (2)

Publication Number Publication Date
JP2009543339A JP2009543339A (ja) 2009-12-03
JP2009543339A5 true JP2009543339A5 (enExample) 2010-07-29

Family

ID=38845944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518165A Ceased JP2009543339A (ja) 2006-06-27 2007-06-21 エッチング損傷を受けた低誘電率の誘電材料（ｌｏｗ−ｋｄｉｅｌｅｃｔｒｉｃｍａｔｅｒｉａｌｓ）を修復し且つその強度を回復する方法

Country Status (8)

Country Link
US (1) US7807219B2 (enExample)
JP (1) JP2009543339A (enExample)
KR (1) KR101392647B1 (enExample)
CN (1) CN101479830B (enExample)
MY (1) MY146528A (enExample)
SG (1) SG173321A1 (enExample)
TW (1) TWI424497B (enExample)
WO (1) WO2008002443A1 (enExample)

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US7998875B2 (en) * 2007-12-19 2011-08-16 Lam Research Corporation Vapor phase repair and pore sealing of low-K dielectric materials
CN101903989B (zh) 2007-12-21 2013-04-17 朗姆研究公司 硅结构的制造和带有形貌控制的深硅蚀刻
JP5322152B2 (ja) * 2008-03-25 2013-10-23 日本カーリット株式会社 シリコン化合物の製造方法
NZ589387A (en) 2008-05-22 2012-11-30 Vladimir Yegorovich Balakin Charged particle beam extraction method and apparatus used in conjunction with a charged particle cancer therapy system
US8896239B2 (en) 2008-05-22 2014-11-25 Vladimir Yegorovich Balakin Charged particle beam injection method and apparatus used in conjunction with a charged particle cancer therapy system
EP2283713B1 (en) 2008-05-22 2018-03-28 Vladimir Yegorovich Balakin Multi-axis charged particle cancer therapy apparatus
US9058910B2 (en) 2008-05-22 2015-06-16 Vladimir Yegorovich Balakin Charged particle beam acceleration method and apparatus as part of a charged particle cancer therapy system
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US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
US10100305B2 (en) 2011-07-15 2018-10-16 Sarepta Therapeutics, Inc. Methods and compositions for manipulating translation of protein isoforms from alternative initiation of start sites
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
CN104841405A (zh) * 2015-05-08 2015-08-19 武汉科奥美萃生物科技有限公司 一种高效液相色谱反相键合相的超/亚临界流体封端方法
US9763322B2 (en) 2016-01-19 2017-09-12 Industrial Technology Research Institute Flexible substrate repair structure, manufacturing method thereof, and inspection and repair method of flexible substrate
KR102733881B1 (ko) 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
EP3735325A4 (en) * 2018-01-05 2021-03-03 FUJIFILM Electronic Materials U.S.A, Inc. SURFACE TREATMENT COMPOSITIONS AND PROCEDURES
KR102480348B1 (ko) * 2018-03-15 2022-12-23 삼성전자주식회사 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR20240083661A (ko) 2022-12-05 2024-06-12 윤소정 노크식 돌돌이 쓰레받기

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