TWI424497B - 經蝕刻損害之低ｋ介電材料強度之修補及恢復 - Google Patents

經蝕刻損害之低ｋ介電材料強度之修補及恢復 Download PDF

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Publication number
TWI424497B
TWI424497B TW096123322A TW96123322A TWI424497B TW I424497 B TWI424497 B TW I424497B TW 096123322 A TW096123322 A TW 096123322A TW 96123322 A TW96123322 A TW 96123322A TW I424497 B TWI424497 B TW I424497B
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Taiwan
Prior art keywords
decane
dielectric material
catalyst
bonded
low
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TW096123322A
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English (en)
Chinese (zh)
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TW200816309A (en
Inventor
James Deyoung
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Lam Res Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
    • B05D1/185—Processes for applying liquids or other fluent materials performed by dipping applying monomolecular layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00—Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90—Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/005—Repairing damaged coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Insulating Materials (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Drying Of Semiconductors (AREA)
TW096123322A 2006-06-27 2007-06-27 經蝕刻損害之低ｋ介電材料強度之修補及恢復 TWI424497B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/475,206 US7807219B2 (en) 2006-06-27 2006-06-27 Repairing and restoring strength of etch-damaged low-k dielectric materials

Publications (2)

Publication Number Publication Date
TW200816309A TW200816309A (en) 2008-04-01
TWI424497B true TWI424497B (zh) 2014-01-21

Family

ID=38845944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096123322A TWI424497B (zh) 2006-06-27 2007-06-27 經蝕刻損害之低ｋ介電材料強度之修補及恢復

Country Status (8)

Country Link
US (1) US7807219B2 (enExample)
JP (1) JP2009543339A (enExample)
KR (1) KR101392647B1 (enExample)
CN (1) CN101479830B (enExample)
MY (1) MY146528A (enExample)
SG (1) SG173321A1 (enExample)
TW (1) TWI424497B (enExample)
WO (1) WO2008002443A1 (enExample)

Cited By (1)

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US9763322B2 (en) 2016-01-19 2017-09-12 Industrial Technology Research Institute Flexible substrate repair structure, manufacturing method thereof, and inspection and repair method of flexible substrate

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JP5132244B2 (ja) * 2007-10-18 2013-01-30 大陽日酸株式会社 絶縁膜のダメージ回復方法および回復剤
WO2009085098A1 (en) * 2007-12-19 2009-07-09 Lam Research Corporation Vapor phase repair and pore sealing of low-k dielectric materials
KR101588909B1 (ko) 2007-12-21 2016-02-12 램 리써치 코포레이션 실리콘 구조의 제조 및 프로파일 제어를 이용한 딥 실리콘 에칭
JP5322152B2 (ja) * 2008-03-25 2013-10-23 日本カーリット株式会社 シリコン化合物の製造方法
EP2283713B1 (en) 2008-05-22 2018-03-28 Vladimir Yegorovich Balakin Multi-axis charged particle cancer therapy apparatus
US8841866B2 (en) 2008-05-22 2014-09-23 Vladimir Yegorovich Balakin Charged particle beam extraction method and apparatus used in conjunction with a charged particle cancer therapy system
US8896239B2 (en) 2008-05-22 2014-11-25 Vladimir Yegorovich Balakin Charged particle beam injection method and apparatus used in conjunction with a charged particle cancer therapy system
JP5450602B2 (ja) 2008-05-22 2014-03-26 エゴロヴィチ バラキン、ウラジミール シンクロトロンによって加速された荷電粒子を用いて腫瘍を治療する腫瘍治療装置
US8173547B2 (en) * 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
SG173879A1 (en) 2009-03-04 2011-10-28 Protom Aozt Multi-field charged particle cancer therapy method and apparatus
US7981699B2 (en) * 2009-10-22 2011-07-19 Lam Research Corporation Method for tunably repairing low-k dielectric damage
US20110097904A1 (en) * 2009-10-22 2011-04-28 Lam Research Corporation Method for repairing low-k dielectric damage
AU2012284259A1 (en) 2011-07-15 2014-03-06 Sarepta Therapeutics, Inc. Methods and compositions for manipulating translation of protein isoforms from alternative initiation start sites
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
CN104841405A (zh) * 2015-05-08 2015-08-19 武汉科奥美萃生物科技有限公司 一种高效液相色谱反相键合相的超/亚临界流体封端方法
KR102733881B1 (ko) 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
IL275626B2 (en) * 2018-01-05 2024-07-01 Fujifilm Electronic Mat Usa Inc Surface treatment compositions and methods
KR102480348B1 (ko) * 2018-03-15 2022-12-23 삼성전자주식회사 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR20240083661A (ko) 2022-12-05 2024-06-12 윤소정 노크식 돌돌이 쓰레받기

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Also Published As

Publication number Publication date
TW200816309A (en) 2008-04-01
MY146528A (en) 2012-08-15
JP2009543339A (ja) 2009-12-03
US7807219B2 (en) 2010-10-05
WO2008002443A1 (en) 2008-01-03
KR20090025343A (ko) 2009-03-10
KR101392647B1 (ko) 2014-05-19
CN101479830B (zh) 2012-04-04
CN101479830A (zh) 2009-07-08
US20070298163A1 (en) 2007-12-27
SG173321A1 (en) 2011-08-29

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