JP2009533857A - 太陽電池 - Google Patents

太陽電池 Download PDF

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Publication number
JP2009533857A
JP2009533857A JP2009504718A JP2009504718A JP2009533857A JP 2009533857 A JP2009533857 A JP 2009533857A JP 2009504718 A JP2009504718 A JP 2009504718A JP 2009504718 A JP2009504718 A JP 2009504718A JP 2009533857 A JP2009533857 A JP 2009533857A
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JP
Japan
Prior art keywords
nanoparticles
nanostructures
solar cell
photosensitive layer
charge transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009504718A
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English (en)
Japanese (ja)
Other versions
JP2009533857A5 (enExample
Inventor
ロレンツェッティ，チェザレ
バイタル，マルチェロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF Schweiz AG
Original Assignee
Ciba Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Holding AG filed Critical Ciba Holding AG
Publication of JP2009533857A publication Critical patent/JP2009533857A/ja
Publication of JP2009533857A5 publication Critical patent/JP2009533857A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy
JP2009504718A 2006-04-13 2007-04-10 太陽電池 Pending JP2009533857A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06112590 2006-04-13
PCT/EP2007/053454 WO2007118815A2 (en) 2006-04-13 2007-04-10 Photovoltaic cell

Publications (2)

Publication Number Publication Date
JP2009533857A true JP2009533857A (ja) 2009-09-17
JP2009533857A5 JP2009533857A5 (enExample) 2010-05-20

Family

ID=37101716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009504718A Pending JP2009533857A (ja) 2006-04-13 2007-04-10 太陽電池

Country Status (7)

Country Link
US (2) US20100000598A1 (enExample)
EP (1) EP2005483A2 (enExample)
JP (1) JP2009533857A (enExample)
KR (1) KR20080112250A (enExample)
CN (1) CN101427383B (enExample)
TW (1) TW200746447A (enExample)
WO (1) WO2007118815A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125101A1 (ja) * 2010-04-02 2011-10-13 株式会社 東芝 光電変換素子及びその製造方法
JP2013254940A (ja) * 2012-05-11 2013-12-19 Osaka Prefecture Univ 光熱変換素子およびその製造方法、光熱発電装置ならびに被検出物質の検出方法
JP2022161954A (ja) * 2016-12-02 2022-10-21 国立大学法人京都大学 光電変換機能を有する電子デバイス
CN115411193A (zh) * 2022-09-15 2022-11-29 浙江合特光电有限公司 一种钙钛矿太阳能电池及其制备方法

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US8361834B2 (en) * 2008-03-18 2013-01-29 Innovalight, Inc. Methods of forming a low resistance silicon-metal contact
JP5069163B2 (ja) * 2008-03-28 2012-11-07 三菱電機株式会社 太陽電池およびその製造方法
EP2279054A2 (en) * 2008-04-25 2011-02-02 National University of Ireland, Galway An ink comprising nanostructures
US20110180142A1 (en) * 2008-08-19 2011-07-28 Oerlikon Solar Ag, Truebbach Electrical and optical properties of silicon solar cells
RU2390075C1 (ru) * 2008-11-27 2010-05-20 Александр Ильич Худыш Фотоэлемент
JP2012523132A (ja) * 2009-04-06 2012-09-27 エンソル エーエス 光起電力セル
WO2010132401A2 (en) * 2009-05-12 2010-11-18 Lightwave Power, Inc. Integrated solar cell nanoarray layers and light concentrating device
KR101523742B1 (ko) * 2009-05-27 2015-05-28 한양대학교 산학협력단 표면 플라즈몬 효과를 이용한 태양 전지 및 그 제조 방법
WO2010144421A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
EP2453484A4 (en) * 2009-07-06 2013-12-04 Toyota Motor Co Ltd PHOTOELECTRIC CONVERSION ELEMENT
KR101074290B1 (ko) * 2009-09-04 2011-10-18 한국철강 주식회사 광기전력 장치 및 광기전력 장치의 제조 방법
JP2011115550A (ja) * 2009-10-26 2011-06-16 Olympus Corp 血圧センサシステム
US9372283B2 (en) * 2009-11-13 2016-06-21 Babak NIKOOBAKHT Nanoengineered devices based on electro-optical modulation of the electrical and optical properties of plasmonic nanoparticles
TWI415278B (zh) * 2010-02-11 2013-11-11 Nexpower Technology Corp 具有多層結構的薄膜太陽能電池
EP2408036A1 (en) 2010-07-16 2012-01-18 Hitachi, Ltd. Device responsive to electromagnetic radiation
CN102347712A (zh) * 2010-07-29 2012-02-08 太阳能科技有限公司 双模块光能发电装置
JP5540431B2 (ja) * 2010-07-30 2014-07-02 国立大学法人東北大学 光電変換部材
EP2422976B1 (de) 2010-07-30 2017-03-08 Ems-Patent Ag Photovoltaikmodul-Mehrschichtrückfolie sowie deren Herstellung und Verwendung bei der Produktion photovoltaischer Module
ES2699713T3 (es) * 2010-12-24 2019-02-12 Dechamps & Sreball Gbr Diodo bipolar con absorbedor óptico de estructura cuántica
JP2014504025A (ja) * 2011-01-14 2014-02-13 ヌソラ インコーポレイテッド 光電池
JP5541185B2 (ja) * 2011-02-08 2014-07-09 住友金属鉱山株式会社 化合物半導体光電変換素子およびその製造方法
JP5681607B2 (ja) 2011-03-28 2015-03-11 株式会社東芝 光電変換素子
WO2013028510A2 (en) * 2011-08-19 2013-02-28 The Trustees Of Boston College Embedded nanopatterns for optical absorbance and photovoltaics
CN102299261A (zh) * 2011-09-23 2011-12-28 清华大学 一种利用核壳纳米颗粒提高转化效率的有机太阳电池
CN102496639B (zh) * 2011-12-21 2014-05-14 中国科学技术大学 等离激元增强型中间带太阳能电池及其光电转换薄膜材料
CN102544133B (zh) * 2012-02-10 2014-06-18 河南科技大学 一种基于界面极化子效应的半导体太阳能电池及制备方法
WO2013120109A2 (en) * 2012-02-10 2013-08-15 Lockheed Martin Corporation Photovoltaic cells having electrical contacts formed from metal nanoparticles and methods for production thereof
US9105561B2 (en) * 2012-05-14 2015-08-11 The Boeing Company Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide
CN107987369A (zh) * 2012-06-01 2018-05-04 埃克森美孚化学专利公司 光伏模块及其制造方法
KR101440607B1 (ko) * 2013-04-15 2014-09-19 광주과학기술원 태양전지 모듈 및 이의 제조방법
TWI493739B (zh) * 2013-06-05 2015-07-21 Univ Nat Taiwan 熱載子光電轉換裝置及其方法
US20160020039A1 (en) * 2013-06-14 2016-01-21 OneSun, LLC Multi-layer mesoporous coatings for conductive surfaces, and methods of preparing thereof
CN104393108A (zh) * 2014-10-27 2015-03-04 中国科学院半导体研究所 用于高效纳米偶极子太阳能电池的强极化装置及方法
CN110135388B (zh) * 2019-05-24 2021-09-03 京东方科技集团股份有限公司 光敏传感器及制作方法、显示面板
CN112786730B (zh) * 2020-12-17 2022-11-08 隆基绿能科技股份有限公司 叠层光伏器件
CN113583379B (zh) * 2021-08-10 2024-03-29 江阴市嘉宇新材料有限公司 一种超细金刚线切割光伏硅片衬板及其制备方法
CN115799376B (zh) * 2023-02-09 2023-05-12 材料科学姑苏实验室 一种叠层光伏电池中间互联层结构及其制备方法与应用

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US20040214001A1 (en) * 1997-03-12 2004-10-28 William Marsh Rice University Metal nanoshells
JP2007073794A (ja) * 2005-09-08 2007-03-22 Univ Of Tokyo プラズモン共鳴型光電変換素子及びその製造方法

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JPH11214724A (ja) * 1998-01-21 1999-08-06 Canon Inc 太陽電池モジュール及びその製造方法と施工方法、及び太陽光発電システム
JPH11354820A (ja) * 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
US6440769B2 (en) * 1999-11-26 2002-08-27 The Trustees Of Princeton University Photovoltaic device with optical concentrator and method of making the same
RU2222846C1 (ru) * 2002-08-08 2004-01-27 Займидорога Олег Антонович Фотоэлемент
TWI340763B (en) * 2003-02-20 2011-04-21 Nippon Kayaku Kk Seal agent for photoelectric conversion elements and photoelectric conversion elements using such seal agent
KR101008274B1 (ko) * 2003-07-24 2011-01-14 가부시키가이샤 가네카 적층형 광전 변환 장치
JP2005050905A (ja) * 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
WO2005083730A1 (en) * 2004-02-19 2005-09-09 Konarka Technologies, Inc. Photovoltaic cell with spacers
US20050236033A1 (en) * 2004-04-13 2005-10-27 Lawandy Nabil M Plasmon enhanced sensitized photovoltaic cells
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US8592680B2 (en) * 2004-08-11 2013-11-26 The Trustees Of Princeton University Organic photosensitive devices

Patent Citations (2)

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US20040214001A1 (en) * 1997-03-12 2004-10-28 William Marsh Rice University Metal nanoshells
JP2007073794A (ja) * 2005-09-08 2007-03-22 Univ Of Tokyo プラズモン共鳴型光電変換素子及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011125101A1 (ja) * 2010-04-02 2011-10-13 株式会社 東芝 光電変換素子及びその製造方法
JPWO2011125101A1 (ja) * 2010-04-02 2013-07-08 株式会社東芝 光電変換素子及びその製造方法
JP2013254940A (ja) * 2012-05-11 2013-12-19 Osaka Prefecture Univ 光熱変換素子およびその製造方法、光熱発電装置ならびに被検出物質の検出方法
JP2022161954A (ja) * 2016-12-02 2022-10-21 国立大学法人京都大学 光電変換機能を有する電子デバイス
CN115411193A (zh) * 2022-09-15 2022-11-29 浙江合特光电有限公司 一种钙钛矿太阳能电池及其制备方法

Also Published As

Publication number Publication date
WO2007118815A3 (en) 2008-09-12
US20130112254A1 (en) 2013-05-09
US20100000598A1 (en) 2010-01-07
EP2005483A2 (en) 2008-12-24
CN101427383B (zh) 2012-05-16
WO2007118815A2 (en) 2007-10-25
KR20080112250A (ko) 2008-12-24
CN101427383A (zh) 2009-05-06
TW200746447A (en) 2007-12-16

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