JP2009530868A5 - - Google Patents

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Publication number
JP2009530868A5
JP2009530868A5 JP2009501627A JP2009501627A JP2009530868A5 JP 2009530868 A5 JP2009530868 A5 JP 2009530868A5 JP 2009501627 A JP2009501627 A JP 2009501627A JP 2009501627 A JP2009501627 A JP 2009501627A JP 2009530868 A5 JP2009530868 A5 JP 2009530868A5
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JP
Japan
Prior art keywords
plasma
magnetic field
field generating
generating feature
processing
Prior art date
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Application number
JP2009501627A
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English (en)
Japanese (ja)
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JP2009530868A (ja
JP5506379B2 (ja
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Priority claimed from US11/389,603 external-priority patent/US20070221128A1/en
Application filed filed Critical
Publication of JP2009530868A publication Critical patent/JP2009530868A/ja
Publication of JP2009530868A5 publication Critical patent/JP2009530868A5/ja
Application granted granted Critical
Publication of JP5506379B2 publication Critical patent/JP5506379B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009501627A 2006-03-23 2007-03-07 大面積基板の均一性を改善する方法及び装置 Expired - Fee Related JP5506379B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/389,603 US20070221128A1 (en) 2006-03-23 2006-03-23 Method and apparatus for improving uniformity of large-area substrates
US11/389,603 2006-03-23
PCT/US2007/063450 WO2007112179A2 (en) 2006-03-23 2007-03-07 Method and apparatus for improving uniformity of large-area substrates

Publications (3)

Publication Number Publication Date
JP2009530868A JP2009530868A (ja) 2009-08-27
JP2009530868A5 true JP2009530868A5 (https=) 2010-04-22
JP5506379B2 JP5506379B2 (ja) 2014-05-28

Family

ID=38532001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009501627A Expired - Fee Related JP5506379B2 (ja) 2006-03-23 2007-03-07 大面積基板の均一性を改善する方法及び装置

Country Status (6)

Country Link
US (1) US20070221128A1 (https=)
JP (1) JP5506379B2 (https=)
KR (1) KR101047249B1 (https=)
CN (1) CN101443474B (https=)
TW (1) TWI339856B (https=)
WO (1) WO2007112179A2 (https=)

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US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US20070202636A1 (en) * 2006-02-22 2007-08-30 Applied Materials, Inc. Method of controlling the film thickness uniformity of PECVD-deposited silicon-comprising thin films
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
JP5524076B2 (ja) * 2007-12-25 2014-06-18 アプライド マテリアルズ インコーポレイテッド プラズマチャンバへｒｆ電力を結合する装置
US8409459B2 (en) * 2008-02-28 2013-04-02 Tokyo Electron Limited Hollow cathode device and method for using the device to control the uniformity of a plasma process
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US20100139562A1 (en) 2008-12-10 2010-06-10 Jusung Engineering Co., Ltd. Substrate treatment apparatus
CN102064082B (zh) * 2009-11-13 2014-11-05 世界中心科技股份有限公司 扩散板结构及其制作方法
BE1019991A3 (fr) * 2011-05-25 2013-03-05 Agc Glass Europe Procede de depot de couches sur un substrat verrier par pecvd a faible pression.
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
CN105431924B (zh) * 2014-04-09 2020-11-17 应用材料公司 用于解决具有改良的流动均匀性/气体传导性的可变的处理容积的对称腔室主体设计架构
CN104120403B (zh) * 2014-07-23 2016-10-19 国家纳米科学中心 一种氮化硅膜材料及其制备方法
US20170114462A1 (en) * 2015-10-26 2017-04-27 Applied Materials, Inc. High productivity pecvd tool for wafer processing of semiconductor manufacturing
TWI733712B (zh) * 2015-12-18 2021-07-21 美商應用材料股份有限公司 用於沉積腔室的擴散器及用於沉積腔室的電極
JP6403106B2 (ja) * 2016-09-05 2018-10-10 信越半導体株式会社 気相成長装置
US20180090300A1 (en) * 2016-09-27 2018-03-29 Applied Materials, Inc. Diffuser With Corner HCG
JP7164632B2 (ja) * 2018-06-08 2022-11-01 アプライド マテリアルズ インコーポレイテッド フラットパネルプロセス機器用の温度制御ガスディフューザー
SG11202101649WA (en) * 2018-09-28 2021-04-29 Applied Materials Inc Coaxial lift device with dynamic leveling
CN116200731B (zh) * 2022-12-30 2025-09-30 湖南红太阳光电科技有限公司 一种极间距可调的pecvd设备
CN118039745B (zh) * 2024-04-11 2025-04-08 福建金石能源有限公司 一种背接触电池的制作方法
US20260002262A1 (en) * 2024-06-26 2026-01-01 Applied Materials, Inc. Showerhead with controlled vapor deposition uniformity

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WO2000075972A1 (fr) * 1999-06-02 2000-12-14 Tokyo Electron Limited Appareil de traitement sous vide
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US7645483B2 (en) * 2006-01-17 2010-01-12 Eastman Kodak Company Two-dimensional aperture array for vapor deposition

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