TWI339856B - Method and apparatus for improving uniformity of large-area substrates - Google Patents

Method and apparatus for improving uniformity of large-area substrates

Info

Publication number
TWI339856B
TWI339856B TW096108834A TW96108834A TWI339856B TW I339856 B TWI339856 B TW I339856B TW 096108834 A TW096108834 A TW 096108834A TW 96108834 A TW96108834 A TW 96108834A TW I339856 B TWI339856 B TW I339856B
Authority
TW
Taiwan
Prior art keywords
area substrates
improving uniformity
uniformity
improving
substrates
Prior art date
Application number
TW096108834A
Other languages
English (en)
Other versions
TW200741826A (en
Inventor
Soo Young Choi
John M White
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200741826A publication Critical patent/TW200741826A/zh
Application granted granted Critical
Publication of TWI339856B publication Critical patent/TWI339856B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
TW096108834A 2006-03-23 2007-03-14 Method and apparatus for improving uniformity of large-area substrates TWI339856B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/389,603 US20070221128A1 (en) 2006-03-23 2006-03-23 Method and apparatus for improving uniformity of large-area substrates

Publications (2)

Publication Number Publication Date
TW200741826A TW200741826A (en) 2007-11-01
TWI339856B true TWI339856B (en) 2011-04-01

Family

ID=38532001

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108834A TWI339856B (en) 2006-03-23 2007-03-14 Method and apparatus for improving uniformity of large-area substrates

Country Status (6)

Country Link
US (1) US20070221128A1 (zh)
JP (1) JP5506379B2 (zh)
KR (1) KR101047249B1 (zh)
CN (1) CN101443474B (zh)
TW (1) TWI339856B (zh)
WO (1) WO2007112179A2 (zh)

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US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US20070202636A1 (en) * 2006-02-22 2007-08-30 Applied Materials, Inc. Method of controlling the film thickness uniformity of PECVD-deposited silicon-comprising thin films
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
WO2009082753A2 (en) * 2007-12-25 2009-07-02 Applied Materials, Inc. Asymmetrical rf drive for electrode of plasma chamber
US8409459B2 (en) * 2008-02-28 2013-04-02 Tokyo Electron Limited Hollow cathode device and method for using the device to control the uniformity of a plasma process
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US20100139562A1 (en) 2008-12-10 2010-06-10 Jusung Engineering Co., Ltd. Substrate treatment apparatus
CN102064082B (zh) * 2009-11-13 2014-11-05 世界中心科技股份有限公司 扩散板结构及其制作方法
BE1019991A3 (fr) * 2011-05-25 2013-03-05 Agc Glass Europe Procede de depot de couches sur un substrat verrier par pecvd a faible pression.
US9157730B2 (en) * 2012-10-26 2015-10-13 Applied Materials, Inc. PECVD process
KR102352739B1 (ko) * 2014-04-09 2022-01-17 어플라이드 머티어리얼스, 인코포레이티드 개선된 유동 균일성/가스 컨덕턴스로 가변 프로세스 볼륨을 처리하기 위한 대칭적 챔버 본체 설계 아키텍처
CN104120403B (zh) * 2014-07-23 2016-10-19 国家纳米科学中心 一种氮化硅膜材料及其制备方法
US20170114462A1 (en) * 2015-10-26 2017-04-27 Applied Materials, Inc. High productivity pecvd tool for wafer processing of semiconductor manufacturing
TWI733712B (zh) * 2015-12-18 2021-07-21 美商應用材料股份有限公司 用於沉積腔室的擴散器及用於沉積腔室的電極
JP6403106B2 (ja) * 2016-09-05 2018-10-10 信越半導体株式会社 気相成長装置
US20180090300A1 (en) * 2016-09-27 2018-03-29 Applied Materials, Inc. Diffuser With Corner HCG
WO2019236937A1 (en) * 2018-06-08 2019-12-12 Applied Materials, Inc. Temperature controlled gas diffuser for flat panel process equipment
CN112639164B (zh) * 2018-09-28 2023-10-10 应用材料公司 具有动态调平的同轴升降装置

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US4105897A (en) * 1976-04-13 1978-08-08 New England Power Service Company Cycloconverter apparatus and method for working into an active load
JP2778020B2 (ja) * 1989-05-15 1998-07-23 富士電機 株式会社 表面処理装置
US5210466A (en) * 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
US5695568A (en) * 1993-04-05 1997-12-09 Applied Materials, Inc. Chemical vapor deposition chamber
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
US5552017A (en) * 1995-11-27 1996-09-03 Taiwan Semiconductor Manufacturing Company Method for improving the process uniformity in a reactor by asymmetrically adjusting the reactant gas flow
WO2000075972A1 (fr) * 1999-06-02 2000-12-14 Tokyo Electron Limited Appareil de traitement sous vide
JP2001110794A (ja) * 1999-10-06 2001-04-20 Ebara Corp 薄膜気相成長装置
JP2001148378A (ja) * 1999-11-22 2001-05-29 Tokyo Electron Ltd プラズマ処理装置、クラスターツールおよびプラズマ制御方法
JP2001244239A (ja) * 2000-02-25 2001-09-07 Nec Corp 半導体製造装置及び堆積物除去方法
US6716302B2 (en) * 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
US20040105897A1 (en) * 2001-11-29 2004-06-03 Greystone Medical Group, Inc. Composition and method for the therapeutic modulation of matrix metalloproteinase
US6963043B2 (en) * 2002-08-28 2005-11-08 Tokyo Electron Limited Asymmetrical focus ring
JP2005133110A (ja) * 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置
US7785672B2 (en) * 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
JP4553247B2 (ja) * 2004-04-30 2010-09-29 東京エレクトロン株式会社 プラズマ処理装置
US7645483B2 (en) * 2006-01-17 2010-01-12 Eastman Kodak Company Two-dimensional aperture array for vapor deposition

Also Published As

Publication number Publication date
KR101047249B1 (ko) 2011-07-06
TW200741826A (en) 2007-11-01
KR20080111081A (ko) 2008-12-22
CN101443474A (zh) 2009-05-27
WO2007112179A2 (en) 2007-10-04
JP2009530868A (ja) 2009-08-27
JP5506379B2 (ja) 2014-05-28
WO2007112179A3 (en) 2008-11-27
US20070221128A1 (en) 2007-09-27
CN101443474B (zh) 2012-12-26

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees