JP7219233B2 - 半導体処理チャンバ内でのガス供給のための装置および方法 - Google Patents
半導体処理チャンバ内でのガス供給のための装置および方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 54
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000009826 distribution Methods 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 34
- 239000012530 fluid Substances 0.000 claims description 30
- 238000005323 electroforming Methods 0.000 claims description 27
- 230000003746 surface roughness Effects 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 description 124
- 238000003754 machining Methods 0.000 description 13
- 229910021645 metal ion Inorganic materials 0.000 description 8
- 238000005086 pumping Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
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- 229920001778 nylon Polymers 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- 238000000151 deposition Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
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- 238000007747 plating Methods 0.000 description 2
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- 230000007704 transition Effects 0.000 description 2
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
- General Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (13)
- 半導体処理システム内でのガス供給のための装置であって、
複数のガス通路を有するガス分配板を備え、前記複数のガス通路のうちの少なくとも1つのガス通路が、マイクロインチで約10Ra以下の粗さを有する表面を有し、
前記ガス分配板が、前記複数のガス通路のうちの少なくとも1つのガス通路を取り囲む少なくとも1つの内部空洞を有し、前記内部空洞が、前記ガス分配板の温度制御を提供するために流体源に流体結合される能力を備える、装置。 - 前記ガス分配板が、前記半導体処理システムのシャワーヘッドの遮蔽板である、請求項1に記載の装置。
- 前記ガス分配板が、前記ガス分配板の周縁部の周囲に内部流体通路を有し、前記内部流体通路が、前記ガス分配板の温度制御を提供するために流体源に流体結合される能力を備える、請求項1に記載の装置。
- 前記ガス分配板が、少なくとも1つのヒートシンクを有し、前記少なくとも1つのヒートシンクが、前記ガス分配板に少なくとも部分的に埋め込まれており、前記複数のガス通路のうちの少なくとも1つのガス通路を取り囲んでいる、請求項1に記載の装置。
- 前記複数のガス通路のうちの少なくとも1つのガス通路が、マイクロインチで約2Ra以下の粗さを有する表面を有する、請求項1に記載の装置。
- 前記半導体処理システム内に取り付けるための支持体を提供するために、前記ガス分配板の周縁部と係合したフランジ
をさらに備える、請求項1に記載の装置。 - 前記ガス分配板と前記フランジとが冷間溶接によって係合された、請求項6に記載の装置。
- チャンバ本体であり、前記チャンバ本体の処理内容積内に配置された基板支持体を有するチャンバ本体と、
前記チャンバ本体の前記処理内容積内の前記基板支持体の反対側に配置されたシャワーヘッドと
を備える処理チャンバであって、前記シャワーヘッドが、
複数のガス通路を有する少なくとも1つのガス分配板であり、前記複数のガス通路のうちの少なくとも1つのガス通路が、マイクロインチで約10Ra以下の粗さを有する表面を有する、少なくとも1つのガス分配板と、
前記処理チャンバの構成要素に取り付けるための支持体を提供するために、前記少なくとも1つのガス分配板のうちの少なくとも1つのガス分配板の周縁部と係合したフランジと
を備え、
前記少なくとも1つのガス分配板のうちの少なくとも1つのガス分配板が少なくとも1つのヒートシンクを有し、前記少なくとも1つのヒートシンクが、前記少なくとも1つのガス分配板のうちの前記少なくとも1つのガス分配板に少なくとも部分的に埋め込まれており、前記複数のガス通路のうちの少なくとも1つのガス通路を取り囲んでいる、処理チャンバ。 - 前記少なくとも1つのガス分配板のうちの少なくとも1つのガス分配板と前記フランジが単一の部片である、請求項8に記載の処理チャンバ。
- 前記少なくとも1つのガス分配板のうちの少なくとも1つのガス分配板が、前記少なくとも1つのガス分配板のうちの前記少なくとも1つのガス分配板の周縁部の周囲に内部流体通路を有し、前記内部流体通路が、前記少なくとも1つのガス分配板のうちの前記少なくとも1つのガス分配板の温度制御を提供するために流体源に流体結合される能力を備える、請求項8に記載の処理チャンバ。
- 前記少なくとも1つのガス分配板のうちの少なくとも1つのガス分配板が、前記複数のガス通路のうちの少なくとも1つのガス通路を取り囲む少なくとも1つの内部空洞を有し、前記内部空洞が、前記少なくとも1つのガス分配板のうちの前記少なくとも1つのガス分配板の温度制御を提供するために流体源に流体結合される能力を備える、請求項8に記載の処理チャンバ。
- 前記複数のガス通路のうちの少なくとも1つのガス通路が、マイクロインチで約2Ra以下の粗さを有する表面を有する、請求項8に記載の処理チャンバ。
- ガス供給装置を形成する方法であって、
導電性ベースを備えるマンドレルであり、ガス分配板をその上に形成するためのマンドレルを用意すること、
マイクロインチで約10Ra以下の平均表面粗さを有する少なくとも1つのピンを前記マンドレルと係合させること、
前記マンドレル上にニッケル材料を電鋳して、前記ガス分配板を形成すること、および
前記マンドレルから前記ガス分配板を取り出すこと
を含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/613,855 | 2017-06-05 | ||
US15/613,855 US11380557B2 (en) | 2017-06-05 | 2017-06-05 | Apparatus and method for gas delivery in semiconductor process chambers |
PCT/US2018/035355 WO2018226503A1 (en) | 2017-06-05 | 2018-05-31 | Apparatus and method for gas delivery in semiconductor process chambers |
Publications (3)
Publication Number | Publication Date |
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JP2020522895A JP2020522895A (ja) | 2020-07-30 |
JP2020522895A5 JP2020522895A5 (ja) | 2021-07-26 |
JP7219233B2 true JP7219233B2 (ja) | 2023-02-07 |
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US (1) | US11380557B2 (ja) |
EP (1) | EP3635776A4 (ja) |
JP (1) | JP7219233B2 (ja) |
KR (1) | KR102530955B1 (ja) |
CN (1) | CN110800095B (ja) |
TW (1) | TWI821188B (ja) |
WO (1) | WO2018226503A1 (ja) |
Citations (2)
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JP2013503490A (ja) | 2009-08-27 | 2013-01-31 | アプライド マテリアルズ インコーポレイテッド | ガス分配シャワーヘッドおよび洗浄方法 |
JP2016181385A (ja) | 2015-03-24 | 2016-10-13 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板の製造方法 |
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