JP2009522771A - 基板から汚染を除去するための方法および装置 - Google Patents
基板から汚染を除去するための方法および装置 Download PDFInfo
- Publication number
- JP2009522771A JP2009522771A JP2008548543A JP2008548543A JP2009522771A JP 2009522771 A JP2009522771 A JP 2009522771A JP 2008548543 A JP2008548543 A JP 2008548543A JP 2008548543 A JP2008548543 A JP 2008548543A JP 2009522771 A JP2009522771 A JP 2009522771A
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- substrate
- solid component
- removing contamination
- component
- immiscible
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- 239000000758 substrate Substances 0.000 title claims abstract description 166
- 238000000034 method Methods 0.000 title claims description 118
- 238000011109 contamination Methods 0.000 title claims description 84
- 239000007787 solid Substances 0.000 claims abstract description 236
- 239000000356 contaminant Substances 0.000 claims abstract description 152
- 239000007788 liquid Substances 0.000 claims abstract description 96
- 239000012459 cleaning agent Substances 0.000 claims abstract description 83
- 230000003993 interaction Effects 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 8
- 230000002776 aggregation Effects 0.000 claims description 7
- 239000012071 phase Substances 0.000 claims description 7
- 230000000452 restraining effect Effects 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 238000005054 agglomeration Methods 0.000 claims description 5
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 5
- 229920001184 polypeptide Polymers 0.000 claims description 4
- 102000004196 processed proteins & peptides Human genes 0.000 claims description 4
- 108090000765 processed proteins & peptides Proteins 0.000 claims description 4
- 238000013519 translation Methods 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 3
- 238000004581 coalescence Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000003190 viscoelastic substance Substances 0.000 claims description 3
- 239000001993 wax Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 230000001141 propulsive effect Effects 0.000 claims description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 2
- 239000012188 paraffin wax Substances 0.000 claims 2
- 230000004520 agglutination Effects 0.000 claims 1
- 238000010952 in-situ formation Methods 0.000 claims 1
- 238000013459 approach Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 101
- 239000007789 gas Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 150000001735 carboxylic acids Chemical class 0.000 description 5
- 239000011538 cleaning material Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 150000004665 fatty acids Chemical class 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- 239000002480 mineral oil Substances 0.000 description 2
- 235000010446 mineral oil Nutrition 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- -1 pH adjusters Substances 0.000 description 2
- 230000010399 physical interaction Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000006194 liquid suspension Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 150000003077 polyols Chemical group 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/04—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0004—Non aqueous liquid compositions comprising insoluble particles
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0013—Liquid compositions with insoluble particles in suspension
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/0017—Multi-phase liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/0008—Detergent materials or soaps characterised by their shape or physical properties aqueous liquid non soap compositions
- C11D17/003—Colloidal solutions, e.g. gels; Thixotropic solutions or pastes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
- C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/12—Water-insoluble compounds
- C11D3/14—Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/18—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/22—Carbohydrates or derivatives thereof
- C11D3/222—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/22—Carbohydrates or derivatives thereof
- C11D3/222—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin
- C11D3/225—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin etherified, e.g. CMC
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/02—Compositions of detergents based essentially on soap on alkali or ammonium soaps
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D9/00—Compositions of detergents based essentially on soap
- C11D9/04—Compositions of detergents based essentially on soap containing compounding ingredients other than soaps
- C11D9/22—Organic compounds, e.g. vitamins
- C11D9/26—Organic compounds, e.g. vitamins containing oxygen
- C11D9/267—Organic compounds, e.g. vitamins containing oxygen containing free fatty acids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
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Abstract
【選択図】図2A
Description
Claims (51)
- 基板から汚染を除去するための方法であって、
液体媒質の中に複数の固体成分を分散された洗浄剤を、基板の上方に配する工程と、
前記複数の固体成分の一固体成分に力を加えて前記固体成分を前記基板の上に存在する汚染物質に接近させ、前記固体成分と前記汚染物質との間に相互作用が確立されるようにする工程と、
前記固体成分と相互作用した前記汚染物質が前記基板から除去されるように、前記固体成分を前記基板から遠ざける工程と、
を備える方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記複数の固体成分は、懸濁した状態で前記液体媒質の中に分散される、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記複数の固体成分は、前記基板を損傷させることおよび前記基板に付着することを回避するように定められる、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、結晶性の固体である、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、非晶質の固体である、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、脂肪族酸、カルボン酸、高分子、ワックス、パラフィン、ポリスチレン、ポリペプチド、または粘弾性材料のいずれかである、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、膠着、凝結、凝集、集塊、または合体のいずれかとして形成される、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記複数の固体成分の一部は、前記液体媒質の中に固体成分網を形成し、前記固体成分網を通じて伝わる機械的応力は、前記固体成分と前記汚染物質との間に相互作用を確立する、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記液体媒質は、水性である、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記液体媒質は、非水性である、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記洗浄剤は、さらに、前記固体成分に力を加えて前記固体成分を前記汚染物質に接近させ、前記固体成分と前記汚染物質との間に相互作用が確立されるようにするように定められた複数の不混和成分を含む、方法。 - 請求項11に記載の、基板から汚染を除去するための方法であって、さらに、
制御された量の力を前記固体成分に加えるために、前記不混和成分を制御する工程を備える方法。 - 請求項11に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、前記液体媒質の中の気泡として定められる、方法。 - 請求項11に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、前記液体媒質の中の液滴として定められる、方法。 - 請求項11に記載の、基板から汚染を除去するための方法であって、
前記複数の不混和成分は、不混和成分の混合として定められ、前記不混和成分の混合の中の各不混和成分は、共通の物理的状態または異なる物理的状態のいずれかを有する、方法。 - 請求項11に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、前記基板の上方に前記洗浄剤を配する前に、前記液体媒質の中に定められる、方法。 - 請求項11に記載の、基板から汚染を除去するための方法であって、さらに、
前記基板の上方に前記洗浄剤を配するのに続いて、前記液体媒質の中に前記不混和成分を形成する工程を備える方法。 - 請求項17に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、前記洗浄剤と相対的な周囲圧力の減少に際して前記液体媒質の中の溶解ガスから形成される、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記固体成分と前記汚染物質との間の相互作用は、付着力、衝突力、および引力の1つまたは複数によって確立される、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、さらに、
前記固体成分と前記汚染物質との間の相互作用を向上させるために、前記液体媒質の化学的性質を調整する工程を備える方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、さらに、
前記前記固体成分と前記汚染物質との間の相互作用を向上させるために、前記洗浄剤の温度を制御する工程を備える方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、さらに、
前記基板から遠ざかる前記固体成分の動きを制御するために、前記基板の上方での前記洗浄剤の流量を制御する工程を備える方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、
前記基板は、半導体ウエハである、方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、さらに、
前記基板上の前記液体媒質内の中で前記複数の固体成分のその場での形成を可能にするために、前記液体媒質の温度を制御する工程を備える方法。 - 請求項1に記載の、基板から汚染を除去するための方法であって、さらに、
前記液体媒質の中で前記複数の固体成分の形成を生じさせるために、前記液体媒質に沈殿剤を導入する工程を備える方法。 - 請求項25に記載の、基板から汚染を除去するための方法であって、さらに、
前記固体成分は、前記沈殿剤を導入する前に前記液体媒質の中で溶媒に溶解され、前記沈殿剤は、前記溶媒とは混ざるが前記固体成分とは混ざらない、方法。 - 基板から汚染を除去するための装置であって、
基板を受けるための溝型材であって、汚染を除去されるべき前記基板の表面に対向する実質的に平行な向きに配置された抑制表面を含むように定められた溝型材と、
前記溝型材によって受けられるべき前記基板を中に浸漬させるように、前記溝型材の中に配された洗浄剤であって、分散した固体成分を含む液体媒質として定められた洗浄剤と、
前記洗浄剤の中に不混和成分を生成し、前記不混和成分を前記溝型材の前記抑制表面と汚染を除去されるべき前記基板の前記表面との間で移動させる推進力が加えられるようにするための、前記溝型材の中に配された不混和成分生成器と、
を備える装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
前記不混和成分は、前記液体媒質の中の前記固体成分に力を加えて前記固体成分を前記基板の上に存在する汚染物質に接近させ、前記固体成分と前記汚染物質との間に相互作用が確立されるようにする、装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
前記溝型材の前記抑制表面と前記基板の前記表面との間での前記不混和成分の動きは、汚染物質と相互作用した前記固体成分を前記基板から遠ざけて、前記汚染物質が前記基板から除去されるようにする、装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、さらに、
汚染物質と相互作用した固体成分が前記基板から遠ざけられるように、前記洗浄剤の中に流れを導入するように定められた洗浄剤循環器を備える装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
前記溝型材は、前記不混和成分を移動させるための前記推進力が浮力であるように、水平に対してある角度で配置されるように定められる、装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
前記溝型材は、前記溝型材の前記抑制表面と前記基板の前記表面との間で分離距離の調整を可能にするように定められる、装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、さらに、
前記固体成分と前記汚染物質との間の相互作用を向上させるとともに前記基板からの前記汚染物質の除去を向上させるために、前記洗浄剤の化学的性質を監視および調整するように定められた洗浄剤制御システムを備える装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、さらに、
前記溝型材の中の前記洗浄剤の温度を制御するように定められた温度制御システムを備える装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
前記不混和成分生成器は、不混和成分を液相または気相のいずれかで生成するように定められる、装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
前記不混和成分生成器は、前記基板の前記表面の全体に数々の不混和成分の連なりを生成するための多岐管として定められる、装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、さらに、
前記基板を前記溝型材の中で回転、並進、または回転および並進のいずれかをさせるように定められた基板ホルダを備える装置。 - 請求項27に記載の、基板から汚染を除去するための装置であって、
複数の基板から同時的に汚染を除去するように定められた装置。 - 基板から汚染を除去するための方法であって、
液体媒質の中に分散された固体成分を含む洗浄剤に、基板を浸漬させ、汚染を除去されるべき前記基板の表面が抑制表面に対向する実質的に平行な向きに配置されるようにする工程と、
前記基板を、前記抑制表面とともに水平平面に対して傾ける工程と、
前記基板より低い高度に対応する位置で前記洗浄剤の中に前記不混和成分を生成し、前記不混和成分に作用する浮力が前記不混和成分を前記基板の上方でなおかつ前記抑制表面と前記基板との間で移動させるようにする工程であって、前記基板の上方での前記不混和成分の移動は、前記液体媒質の中の前記固体成分に力を加え、前記固体成分が前記基板の上に存在する汚染物質と相互作用するようにする、工程と、
を備える方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、脂肪族酸、カルボン酸、高分子、ワックス、パラフィン、ポリスチレン、ポリペプチド、および粘弾性材料の1つまたは複数として定められる、方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、膠着、凝結、凝集、集塊、および合体の1つまたは複数として形成される、方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、
前記固体成分は、前記液体媒質の中に固体成分網を形成し、前記固体成分網を通じて伝わる機械的応力は、前記汚染物質と相互作用する、方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、前記液体媒質の中の気泡として定められる、方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、前記液体媒質の中の液滴として定められる、方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、
前記不混和成分は、不混和成分の混合として定められ、前記不混和成分の混合の中の各不混和成分は、共通の物理的状態または異なる物理的状態のいずれかを有する、方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、さらに、
前記基板の上方での前記不混和成分の速度を制御するために、前記基板を前記抑制表面とともに傾ける角度を調整する工程を備える方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、さらに、
前記不混和成分が前記基板の上方を移動する際に、前記不混和成分と前記基板との間の距離を制御するために、前記抑制表面と前記基板との間の分離距離を調整する工程を備える方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、さらに、
前記基板の上方に洗浄剤の流れを導入するために、前記洗浄剤を循環させる工程を備える方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、さらに、
前記洗浄剤の化学的性質を監視する工程と、
前記固体成分と前記汚染物質との間の相互作用を向上させるとともに前記基板からの前記汚染物質の除去を向上させるために、前記洗浄剤の化学的性質を調整する工程と、
を備える方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、さらに、
前記洗浄剤の温度を監視する工程と、
前記固体成分と前記汚染物質との間の相互作用を向上させるとともに前記基板からの前記汚染物質の除去を向上させるために、前記洗浄剤の温度を調整する工程と、
を備える方法。 - 請求項39に記載の、基板から汚染を除去するための方法であって、さらに、
前記基板の上方で前記不混和成分が移動する際に、回転、並進、または回転と並進との両方のいずれかを通じて前記基板を操作する工程を備える方法。
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Also Published As
Publication number | Publication date |
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WO2007078642A3 (en) | 2007-12-27 |
US20070079848A1 (en) | 2007-04-12 |
MY158269A (en) | 2016-09-30 |
US7648584B2 (en) | 2010-01-19 |
JP4956551B2 (ja) | 2012-06-20 |
US8555903B2 (en) | 2013-10-15 |
WO2007078642A2 (en) | 2007-07-12 |
US20100059088A1 (en) | 2010-03-11 |
EP1965934A2 (en) | 2008-09-10 |
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