JP5071784B2 - 磁気記録媒体用基板の洗浄方法および磁気記録媒体の製造方法 - Google Patents
磁気記録媒体用基板の洗浄方法および磁気記録媒体の製造方法 Download PDFInfo
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- JP5071784B2 JP5071784B2 JP2007183267A JP2007183267A JP5071784B2 JP 5071784 B2 JP5071784 B2 JP 5071784B2 JP 2007183267 A JP2007183267 A JP 2007183267A JP 2007183267 A JP2007183267 A JP 2007183267A JP 5071784 B2 JP5071784 B2 JP 5071784B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 99
- 239000000758 substrate Substances 0.000 title claims description 75
- 238000004140 cleaning Methods 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002101 nanobubble Substances 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 229910018104 Ni-P Inorganic materials 0.000 claims description 10
- 229910018536 Ni—P Inorganic materials 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 87
- 239000010408 film Substances 0.000 description 29
- 230000006641 stabilisation Effects 0.000 description 16
- 238000011105 stabilization Methods 0.000 description 16
- 239000000203 mixture Substances 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 239000011241 protective layer Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 230000005290 antiferromagnetic effect Effects 0.000 description 10
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 230000005415 magnetization Effects 0.000 description 10
- 239000011651 chromium Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 230000000087 stabilizing effect Effects 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 230000001050 lubricating effect Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
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- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 229910019222 CoCrPt Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010687 lubricating oil Substances 0.000 description 3
- 239000006249 magnetic particle Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- -1 CoCrTa Inorganic materials 0.000 description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010952 cobalt-chrome Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
この磁気配向性低下の原因としては、Ni−Pメッキ表面の酸化が原因と考えられ、より、酸化を抑制することと同時に、洗浄品質を向上させることが求められていた。
また、この洗浄方法を採用する本発明の磁気記録媒体の製造方法によれば、アルミニウム合金系材料の非磁性基板を用いた高記録密度対応の異方性磁気記録媒体を提供することが可能となる。
生じる反強磁性結合の大きさは、安定化層、スペーサ層、および磁性層の組成・膜厚、成膜条件(圧力・雰囲気など)、各層の平滑性等の種々の要因に依存する。なお、この安定化層およびスペーサ層の対を1対のみ設けてもよく、磁性層間に反強磁性結合が生じる限り、安定化層およびスペーサ層の対を更に追加することも可能である。
表面にNi−Pメッキを施した基板を用い、テクスチャ加工によりNi−Pメッキ膜表面に溝形成を行ない、その後の洗浄工程で、図1に示す装置を用いて基板を純水に浸漬させる際に、純水中に窒素を混入したナノバブルを発生させたナノバブル水に基板を浸漬させて洗浄を行なった。なお、ナノバブルは、市販のナノバブル発生装置(株式会社アスプ製、ナノバブル発生装置AS−K1)を用いて発生させた。
窒素の代わりにヘリウムのナノバブルを発生させたナノバブル水を用いた以外は実施例1と同様にして洗浄を行った。このようにして洗浄した基板を用いて実施例1と同様にして基板表面の酸素量、磁気記録媒体のOR値、磁気記録媒体の基板表面の残存パーティ来る数を測定した。その結果を表1〜3、図2〜4に示す。
窒素ナノバブル水の代わりに純水を用いた以外は実施例1と同様にして基板の洗浄を行い、基板表面の酸素量を評価した。その結果を実施例1の結果と共に、図2、表1に示す。
また、こうして洗浄された基板を用いた以外は実施例1と同様にして磁気記録媒体を作製し、その磁気配向性(OR)を評価した。その結果を実施例1の結果と共に図3、表2に示す。
また、得られた磁気記録媒体の基板表面に残るパーティクル数を測定した。その結果を実施例1の結果と共に図4に示す。
窒素ナノバブル水の代わりに酸素ナノバブル水を用いた以外は実施例1と同様にして基板の洗浄を行った。このようにして洗浄した基板を用いて実施例1と同様にして基板表面の酸素量、磁気記録媒体のOR値、磁気記録媒体の基板表面の残存パーティクル数を測定した。その結果を実施例1の結果と共に表1〜3、図2〜4に示す。
2:外槽
3:基板
4:注入口
5:開口
6:排出口
Claims (2)
- 基板の洗浄工程および該基板上に膜形成を行なう成膜工程を有する磁気記録媒体の製造方法において、
前記基板はNi−P表面を有し、
前記洗浄工程は、
前記基板を洗浄槽に配置し、
純水中にヘリウムまたは水素からなるナノバブルを保持させたナノバブル水を準備し、
前記ナノバブル水を、前記基板の下部から前記洗浄槽に導入して、該洗浄槽の上部から排出しながら洗浄する工程であり、
前記成膜工程は、前記洗浄工程に引き続いて実施する工程である、
ことを特徴とする磁気記録媒体の製造方法。 - 前記基板がテクスチャ加工された基板であることを特徴とする請求項1記載の磁気記録媒体の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007183267A JP5071784B2 (ja) | 2007-07-12 | 2007-07-12 | 磁気記録媒体用基板の洗浄方法および磁気記録媒体の製造方法 |
US12/216,807 US20090029041A1 (en) | 2007-07-12 | 2008-07-10 | Method of cleaning a substrate for a magnetic recording medium and a method of manufacturing a magnetic recording medium |
Applications Claiming Priority (1)
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JP2007183267A JP5071784B2 (ja) | 2007-07-12 | 2007-07-12 | 磁気記録媒体用基板の洗浄方法および磁気記録媒体の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2009020964A JP2009020964A (ja) | 2009-01-29 |
JP5071784B2 true JP5071784B2 (ja) | 2012-11-14 |
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JP2007183267A Expired - Fee Related JP5071784B2 (ja) | 2007-07-12 | 2007-07-12 | 磁気記録媒体用基板の洗浄方法および磁気記録媒体の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US20090029041A1 (ja) |
JP (1) | JP5071784B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015221417A (ja) * | 2014-05-23 | 2015-12-10 | シャープ株式会社 | 導電性基体の洗浄装置および洗浄方法 |
CN106794490B (zh) | 2014-09-05 | 2020-09-11 | 坦南特公司 | 用于供应具有纳米气泡的处理液体的系统和方法 |
KR102250190B1 (ko) * | 2014-10-31 | 2021-05-10 | 삼성전자주식회사 | 나노버블을 가진 그래핀 구조체 및 그 제조방법 |
JP6653620B2 (ja) * | 2016-05-24 | 2020-02-26 | 大同メタル工業株式会社 | 洗浄装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2621616B2 (ja) * | 1990-04-04 | 1997-06-18 | 富士電機株式会社 | 薄膜磁気記録媒体の製造方法 |
JPH05282659A (ja) * | 1992-04-02 | 1993-10-29 | Matsushita Electric Ind Co Ltd | 磁気記録媒体 |
JP2834380B2 (ja) * | 1993-03-15 | 1998-12-09 | ストアメディア インコーポレーテッド | 金属薄膜型磁気記録媒体 |
JP3742451B2 (ja) * | 1996-01-17 | 2006-02-01 | 昌之 都田 | 洗浄方法 |
WO1998032128A1 (en) * | 1997-01-15 | 1998-07-23 | Seagate Technology, Inc. | Magnetic recording medium |
JP2000306234A (ja) * | 1999-04-22 | 2000-11-02 | Fuji Electric Co Ltd | 磁気記録媒体用硬質基板の洗浄方法 |
JP2001312817A (ja) * | 2000-04-26 | 2001-11-09 | Fuji Electric Co Ltd | 磁気記録媒体用ガラス基板の洗浄方法、該洗浄方法により洗浄された磁気記録媒体用ガラス基板、および該基板を使用した磁気記録媒体 |
JP2004121962A (ja) * | 2002-10-01 | 2004-04-22 | National Institute Of Advanced Industrial & Technology | ナノバブルの利用方法及び装置 |
US7648584B2 (en) * | 2003-06-27 | 2010-01-19 | Lam Research Corporation | Method and apparatus for removing contamination from substrate |
US7981286B2 (en) * | 2004-09-15 | 2011-07-19 | Dainippon Screen Mfg Co., Ltd. | Substrate processing apparatus and method of removing particles |
JP2006147617A (ja) * | 2004-11-16 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置およびパーティクル除去方法 |
-
2007
- 2007-07-12 JP JP2007183267A patent/JP5071784B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-10 US US12/216,807 patent/US20090029041A1/en not_active Abandoned
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Publication number | Publication date |
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US20090029041A1 (en) | 2009-01-29 |
JP2009020964A (ja) | 2009-01-29 |
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