JP2009513019A5 - - Google Patents
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- Publication number
- JP2009513019A5 JP2009513019A5 JP2008536797A JP2008536797A JP2009513019A5 JP 2009513019 A5 JP2009513019 A5 JP 2009513019A5 JP 2008536797 A JP2008536797 A JP 2008536797A JP 2008536797 A JP2008536797 A JP 2008536797A JP 2009513019 A5 JP2009513019 A5 JP 2009513019A5
- Authority
- JP
- Japan
- Prior art keywords
- die
- buffer region
- resin
- dielectric constant
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims 8
- 229920005989 resin Polymers 0.000 claims 8
- 239000000945 filler Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 6
- 238000007607 die coating method Methods 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 3
- 238000007789 sealing Methods 0.000 claims 3
- 239000004005 microsphere Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/257,802 US7435625B2 (en) | 2005-10-24 | 2005-10-24 | Semiconductor device with reduced package cross-talk and loss |
| PCT/US2006/040869 WO2007050420A2 (en) | 2005-10-24 | 2006-10-18 | Semiconductor device with reduced package cross-talk and loss |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009513019A JP2009513019A (ja) | 2009-03-26 |
| JP2009513019A5 true JP2009513019A5 (enExample) | 2009-11-26 |
Family
ID=37968396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008536797A Pending JP2009513019A (ja) | 2005-10-24 | 2006-10-18 | パッケージのクロストークおよび損失を低減した半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7435625B2 (enExample) |
| JP (1) | JP2009513019A (enExample) |
| KR (1) | KR101296701B1 (enExample) |
| TW (1) | TWI414046B (enExample) |
| WO (1) | WO2007050420A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4870509B2 (ja) * | 2006-09-27 | 2012-02-08 | 新光電気工業株式会社 | 電子装置 |
| DE102009026804A1 (de) * | 2009-06-08 | 2010-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung elektronischer Bauteile |
| JP5018909B2 (ja) * | 2009-06-30 | 2012-09-05 | 株式会社デンソー | 半導体装置 |
| JP2011054806A (ja) * | 2009-09-02 | 2011-03-17 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| WO2011139845A2 (en) * | 2010-04-28 | 2011-11-10 | Hoya Corporation Usa | Cross-talk reduction in a bidirectional optoelectronic device |
| JP5532419B2 (ja) * | 2010-06-17 | 2014-06-25 | 富士電機株式会社 | 絶縁材、金属ベース基板および半導体モジュール並びにこれらの製造方法 |
| CN102714542B (zh) * | 2010-06-25 | 2015-08-19 | Hoya美国公司 | 双向光电子设备中的串扰减小 |
| KR20120000805A (ko) | 2010-06-28 | 2012-01-04 | 삼성전자주식회사 | 반도체 패키지의 몰딩 방법 |
| CN102714555B (zh) * | 2010-09-06 | 2016-06-15 | 华为技术有限公司 | 双向光电子设备中的串扰减小 |
| WO2013063410A1 (en) | 2011-10-28 | 2013-05-02 | Hoya Corporation Usa | Optical waveguide splitter on a waveguide substrate for attenuating a light source |
| US9490041B2 (en) | 2012-03-27 | 2016-11-08 | 3M Innovative Properties Company | Composite particles comprising a conductive coating of PEDOT/PSS, methods of making, and articles including the same |
| KR101905893B1 (ko) * | 2012-06-13 | 2018-10-08 | 에스케이하이닉스 주식회사 | 복수의 유전층을 포함하는 임베디드 패키지 및 제조 방법 |
| US9226428B2 (en) * | 2012-06-28 | 2015-12-29 | Intel Corporation | High heat capacity electronic components and methods for fabricating |
| US20140103508A1 (en) * | 2012-10-11 | 2014-04-17 | Texas Instruments Incorporated | Encapsulating package for an integrated circuit |
| EP2731130A1 (en) * | 2012-11-12 | 2014-05-14 | Nxp B.V. | Cavity package for an integrated circuit |
| US9312231B2 (en) * | 2013-10-31 | 2016-04-12 | Freescale Semiconductor, Inc. | Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process |
| US9461005B2 (en) * | 2015-02-12 | 2016-10-04 | Ampleon Netherlands B.V. | RF package with non-gaseous dielectric material |
| US10431526B2 (en) * | 2017-10-09 | 2019-10-01 | Cree, Inc. | Rivetless lead fastening for a semiconductor package |
| US10897824B2 (en) * | 2017-10-30 | 2021-01-19 | Baker Hughes, A Ge Company, Llc | Encapsulation of downhole microelectronics and method the same |
| US11410898B2 (en) * | 2017-10-31 | 2022-08-09 | Nagase Chemtex Corporation | Manufacturing method of mounting structure, and sheet therefor |
| US10446414B2 (en) * | 2017-12-22 | 2019-10-15 | Texas Instruments Incorporated | Semiconductor package with filler particles in a mold compound |
| US10672703B2 (en) | 2018-09-26 | 2020-06-02 | Nxp Usa, Inc. | Transistor with shield structure, packaged device, and method of fabrication |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4079162A (en) * | 1974-03-20 | 1978-03-14 | Aim Associates, Inc. | Soundproof structure |
| US4041009A (en) * | 1976-12-08 | 1977-08-09 | Fujitsu Limited | Process for producing anti-blocking and low pressure moldable diallyl phthalate resin molding materials |
| JPS6331149A (ja) * | 1986-07-25 | 1988-02-09 | Fujitsu Ltd | 半導体装置 |
| JPS6379353A (ja) * | 1986-09-24 | 1988-04-09 | Hitachi Ltd | 樹脂封止型半導体装置 |
| US6191492B1 (en) * | 1988-08-26 | 2001-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device including a densified region |
| JP2712618B2 (ja) * | 1989-09-08 | 1998-02-16 | 三菱電機株式会社 | 樹脂封止型半導体装置 |
| JP2656356B2 (ja) * | 1989-09-13 | 1997-09-24 | 株式会社東芝 | 多重モールド型半導体装置及びその製造方法 |
| JP2906282B2 (ja) * | 1990-09-20 | 1999-06-14 | 富士通株式会社 | ガラスセラミック・グリーンシートと多層基板、及び、その製造方法 |
| EP0634792B1 (en) * | 1991-03-08 | 1998-04-29 | Japan Gore-Tex, Inc. | Resin-sealed semiconductor device containing porous fluororesin |
| JPH04314394A (ja) * | 1991-04-12 | 1992-11-05 | Fujitsu Ltd | ガラスセラミック回路基板とその製造方法 |
| JP2988117B2 (ja) * | 1992-03-30 | 1999-12-06 | 日本電気株式会社 | 樹脂封止型半導体装置 |
| JP2721093B2 (ja) * | 1992-07-21 | 1998-03-04 | 三菱電機株式会社 | 半導体装置 |
| US5598034A (en) * | 1992-07-22 | 1997-01-28 | Vlsi Packaging Corporation | Plastic packaging of microelectronic circuit devices |
| US5785789A (en) * | 1993-03-18 | 1998-07-28 | Digital Equipment Corporation | Low dielectric constant microsphere filled layers for multilayer electrical structures |
| US5379186A (en) * | 1993-07-06 | 1995-01-03 | Motorola, Inc. | Encapsulated electronic component having a heat diffusing layer |
| JP2531382B2 (ja) * | 1994-05-26 | 1996-09-04 | 日本電気株式会社 | ボ―ルグリッドアレイ半導体装置およびその製造方法 |
| US5578860A (en) * | 1995-05-01 | 1996-11-26 | Motorola, Inc. | Monolithic high frequency integrated circuit structure having a grounded source configuration |
| JPH0927573A (ja) * | 1995-07-13 | 1997-01-28 | Mitsubishi Electric Corp | 半導体装置 |
| JP2871591B2 (ja) * | 1996-05-14 | 1999-03-17 | 日本電気株式会社 | 高周波用電子部品および高周波用電子部品の製造方法 |
| JP3870301B2 (ja) * | 1996-06-11 | 2007-01-17 | ヤマハ株式会社 | 半導体装置の組立法、半導体装置及び半導体装置の連続組立システム |
| WO1998044016A1 (en) * | 1997-04-02 | 1998-10-08 | Sanyo Chemical Industries, Ltd. | Polyurethane foam, process for producing the same, and foam forming composition |
| US6001673A (en) * | 1999-02-11 | 1999-12-14 | Ericsson Inc. | Methods for packaging integrated circuit devices including cavities adjacent active regions |
| US6384487B1 (en) * | 1999-12-06 | 2002-05-07 | Micron Technology, Inc. | Bow resistant plastic semiconductor package and method of fabrication |
| US6521703B2 (en) * | 2000-01-18 | 2003-02-18 | General Electric Company | Curable resin composition, method for the preparation thereof, and articles derived thereform |
| US6630153B2 (en) * | 2001-02-23 | 2003-10-07 | Smith & Nephew, Inc. | Manufacture of bone graft substitutes |
| US6509415B1 (en) * | 2000-04-07 | 2003-01-21 | Honeywell International Inc. | Low dielectric constant organic dielectrics based on cage-like structures |
| ATE327097T1 (de) * | 2000-04-07 | 2006-06-15 | Fuji Photo Film Co Ltd | Wärmeempfindlicher lithographischer druckplattevorläufer |
| US6627669B2 (en) * | 2000-06-06 | 2003-09-30 | Honeywell International Inc. | Low dielectric materials and methods of producing same |
| US6423811B1 (en) * | 2000-07-19 | 2002-07-23 | Honeywell International Inc. | Low dielectric constant materials with polymeric networks |
| US6794481B2 (en) * | 2001-06-28 | 2004-09-21 | Mitsubishi Gas Chemical Company, Inc. | Bifunctional phenylene ether oligomer, its derivatives, its use and process for the production thereof |
| US6744117B2 (en) * | 2002-02-28 | 2004-06-01 | Motorola, Inc. | High frequency semiconductor device and method of manufacture |
| TWI457835B (zh) * | 2004-02-04 | 2014-10-21 | Semiconductor Energy Lab | 攜帶薄膜積體電路的物品 |
-
2005
- 2005-10-24 US US11/257,802 patent/US7435625B2/en not_active Expired - Lifetime
-
2006
- 2006-10-18 KR KR1020087009842A patent/KR101296701B1/ko not_active Expired - Fee Related
- 2006-10-18 JP JP2008536797A patent/JP2009513019A/ja active Pending
- 2006-10-18 WO PCT/US2006/040869 patent/WO2007050420A2/en not_active Ceased
- 2006-10-23 TW TW095139041A patent/TWI414046B/zh not_active IP Right Cessation
-
2008
- 2008-09-04 US US12/204,500 patent/US7701074B2/en not_active Expired - Fee Related
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