JP2009510777A - 改善された収集のための光検出器及びｎ型層構造 - Google Patents

改善された収集のための光検出器及びｎ型層構造 Download PDF

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Publication number
JP2009510777A
JP2009510777A JP2008533438A JP2008533438A JP2009510777A JP 2009510777 A JP2009510777 A JP 2009510777A JP 2008533438 A JP2008533438 A JP 2008533438A JP 2008533438 A JP2008533438 A JP 2008533438A JP 2009510777 A JP2009510777 A JP 2009510777A
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layer
conductivity type
image sensor
photodetector
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Japanese (ja)
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JP2009510777A5 (enExample
Inventor
ゴードン スティーヴンズ，エリック
ニューウェル ニコルス，ディヴィッド
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イーストマン コダック カンパニー
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Publication of JP2009510777A5 publication Critical patent/JP2009510777A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2008533438A 2005-09-28 2006-09-18 改善された収集のための光検出器及びｎ型層構造 Pending JP2009510777A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72116805P 2005-09-28 2005-09-28
US11/453,354 US7875916B2 (en) 2005-09-28 2006-06-15 Photodetector and n-layer structure for improved collection efficiency
PCT/US2006/036559 WO2007038107A2 (en) 2005-09-28 2006-09-18 Photodetector and n-layer structure for improved collection

Publications (2)

Publication Number Publication Date
JP2009510777A true JP2009510777A (ja) 2009-03-12
JP2009510777A5 JP2009510777A5 (enExample) 2009-11-05

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JP2008533438A Pending JP2009510777A (ja) 2005-09-28 2006-09-18 改善された収集のための光検出器及びｎ型層構造

Country Status (7)

Country Link
US (1) US7875916B2 (enExample)
EP (1) EP1938379A2 (enExample)
JP (1) JP2009510777A (enExample)
KR (1) KR20080050448A (enExample)
CN (1) CN101273457B (enExample)
TW (1) TWI382531B (enExample)
WO (1) WO2007038107A2 (enExample)

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US9837460B2 (en) 2015-12-28 2017-12-05 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof

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GB0725245D0 (en) 2007-12-28 2008-02-06 Cmosis Nv Semiconductor detector for electromagnetic or particle radiation
US8357984B2 (en) * 2008-02-08 2013-01-22 Omnivision Technologies, Inc. Image sensor with low electrical cross-talk
US20090243025A1 (en) * 2008-03-25 2009-10-01 Stevens Eric G Pixel structure with a photodetector having an extended depletion depth
US7948018B2 (en) * 2008-04-24 2011-05-24 Omnivision Technologies, Inc. Multilayer image sensor structure for reducing crosstalk
US20100109060A1 (en) * 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
US8329499B2 (en) 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors
US7875918B2 (en) * 2009-04-24 2011-01-25 Omnivision Technologies, Inc. Multilayer image sensor pixel structure for reducing crosstalk
JP5971565B2 (ja) * 2011-06-22 2016-08-17 パナソニックＩｐマネジメント株式会社 固体撮像装置
US8889461B2 (en) 2012-05-29 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. CIS image sensors with epitaxy layers and methods for forming the same
EP2816601B1 (en) * 2013-06-20 2017-03-01 IMEC vzw Improvements in or relating to pinned photodiodes for use in image sensors
CN113851501A (zh) * 2021-10-20 2021-12-28 华虹半导体(无锡)有限公司 防串扰图像传感器

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9837460B2 (en) 2015-12-28 2017-12-05 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
US10134796B2 (en) 2015-12-28 2018-11-20 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
KR20080050448A (ko) 2008-06-05
WO2007038107A3 (en) 2007-10-04
US7875916B2 (en) 2011-01-25
CN101273457B (zh) 2011-11-16
TW200721474A (en) 2007-06-01
EP1938379A2 (en) 2008-07-02
US20070069315A1 (en) 2007-03-29
WO2007038107A2 (en) 2007-04-05
CN101273457A (zh) 2008-09-24
TWI382531B (zh) 2013-01-11

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