TWI382531B - 用於改良式收集之光偵測器以及ｎ層結構 - Google Patents

用於改良式收集之光偵測器以及ｎ層結構 Download PDF

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Publication number
TWI382531B
TWI382531B TW095135693A TW95135693A TWI382531B TW I382531 B TWI382531 B TW I382531B TW 095135693 A TW095135693 A TW 095135693A TW 95135693 A TW95135693 A TW 95135693A TW I382531 B TWI382531 B TW I382531B
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TW
Taiwan
Prior art keywords
layer
conductivity type
image sensor
type
substrate
Prior art date
Application number
TW095135693A
Other languages
English (en)
Chinese (zh)
Other versions
TW200721474A (en
Inventor
Eric G Stevens
David N Nichols
Original Assignee
Omnivision Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omnivision Tech Inc filed Critical Omnivision Tech Inc
Publication of TW200721474A publication Critical patent/TW200721474A/zh
Application granted granted Critical
Publication of TWI382531B publication Critical patent/TWI382531B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW095135693A 2005-09-28 2006-09-27 用於改良式收集之光偵測器以及ｎ層結構 TWI382531B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72116805P 2005-09-28 2005-09-28
US11/453,354 US7875916B2 (en) 2005-09-28 2006-06-15 Photodetector and n-layer structure for improved collection efficiency

Publications (2)

Publication Number Publication Date
TW200721474A TW200721474A (en) 2007-06-01
TWI382531B true TWI382531B (zh) 2013-01-11

Family

ID=37581418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135693A TWI382531B (zh) 2005-09-28 2006-09-27 用於改良式收集之光偵測器以及ｎ層結構

Country Status (7)

Country Link
US (1) US7875916B2 (enExample)
EP (1) EP1938379A2 (enExample)
JP (1) JP2009510777A (enExample)
KR (1) KR20080050448A (enExample)
CN (1) CN101273457B (enExample)
TW (1) TWI382531B (enExample)
WO (1) WO2007038107A2 (enExample)

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US8357984B2 (en) * 2008-02-08 2013-01-22 Omnivision Technologies, Inc. Image sensor with low electrical cross-talk
US20090243025A1 (en) * 2008-03-25 2009-10-01 Stevens Eric G Pixel structure with a photodetector having an extended depletion depth
US7948018B2 (en) * 2008-04-24 2011-05-24 Omnivision Technologies, Inc. Multilayer image sensor structure for reducing crosstalk
US20100109060A1 (en) * 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
US8772891B2 (en) * 2008-12-10 2014-07-08 Truesense Imaging, Inc. Lateral overflow drain and channel stop regions in image sensors
US7875918B2 (en) * 2009-04-24 2011-01-25 Omnivision Technologies, Inc. Multilayer image sensor pixel structure for reducing crosstalk
WO2012176454A1 (ja) * 2011-06-22 2012-12-27 パナソニック株式会社 固体撮像装置
US8889461B2 (en) 2012-05-29 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. CIS image sensors with epitaxy layers and methods for forming the same
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JP6607777B2 (ja) 2015-12-28 2019-11-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN113851501A (zh) * 2021-10-20 2021-12-28 华虹半导体(无锡)有限公司 防串扰图像传感器

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Also Published As

Publication number Publication date
CN101273457B (zh) 2011-11-16
EP1938379A2 (en) 2008-07-02
US20070069315A1 (en) 2007-03-29
WO2007038107A3 (en) 2007-10-04
KR20080050448A (ko) 2008-06-05
TW200721474A (en) 2007-06-01
WO2007038107A2 (en) 2007-04-05
JP2009510777A (ja) 2009-03-12
CN101273457A (zh) 2008-09-24
US7875916B2 (en) 2011-01-25

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