CN101273457B - 光电探测器和用来提高收集的n-层结构 - Google Patents

光电探测器和用来提高收集的n-层结构 Download PDF

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Publication number
CN101273457B
CN101273457B CN2006800359431A CN200680035943A CN101273457B CN 101273457 B CN101273457 B CN 101273457B CN 2006800359431 A CN2006800359431 A CN 2006800359431A CN 200680035943 A CN200680035943 A CN 200680035943A CN 101273457 B CN101273457 B CN 101273457B
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layer
photodetector
ground floor
conduction type
substrate
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CN101273457A (zh
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E·G·斯蒂文斯
D·N·尼克尔斯
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2006800359431A 2005-09-28 2006-09-18 光电探测器和用来提高收集的n-层结构 Active CN101273457B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US72116805P 2005-09-28 2005-09-28
US60/721,168 2005-09-28
US11/453,354 2006-06-15
US11/453,354 US7875916B2 (en) 2005-09-28 2006-06-15 Photodetector and n-layer structure for improved collection efficiency
PCT/US2006/036559 WO2007038107A2 (en) 2005-09-28 2006-09-18 Photodetector and n-layer structure for improved collection

Publications (2)

Publication Number Publication Date
CN101273457A CN101273457A (zh) 2008-09-24
CN101273457B true CN101273457B (zh) 2011-11-16

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Country Status (7)

Country Link
US (1) US7875916B2 (enExample)
EP (1) EP1938379A2 (enExample)
JP (1) JP2009510777A (enExample)
KR (1) KR20080050448A (enExample)
CN (1) CN101273457B (enExample)
TW (1) TWI382531B (enExample)
WO (1) WO2007038107A2 (enExample)

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US8357984B2 (en) * 2008-02-08 2013-01-22 Omnivision Technologies, Inc. Image sensor with low electrical cross-talk
US20090243025A1 (en) * 2008-03-25 2009-10-01 Stevens Eric G Pixel structure with a photodetector having an extended depletion depth
US7948018B2 (en) * 2008-04-24 2011-05-24 Omnivision Technologies, Inc. Multilayer image sensor structure for reducing crosstalk
US20100109060A1 (en) * 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
US8329499B2 (en) * 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors
US7875918B2 (en) * 2009-04-24 2011-01-25 Omnivision Technologies, Inc. Multilayer image sensor pixel structure for reducing crosstalk
WO2012176454A1 (ja) * 2011-06-22 2012-12-27 パナソニック株式会社 固体撮像装置
US8889461B2 (en) 2012-05-29 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. CIS image sensors with epitaxy layers and methods for forming the same
EP2816601B1 (en) * 2013-06-20 2017-03-01 IMEC vzw Improvements in or relating to pinned photodiodes for use in image sensors
JP6607777B2 (ja) 2015-12-28 2019-11-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN113851501A (zh) * 2021-10-20 2021-12-28 华虹半导体(无锡)有限公司 防串扰图像传感器

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同上.

Also Published As

Publication number Publication date
KR20080050448A (ko) 2008-06-05
EP1938379A2 (en) 2008-07-02
JP2009510777A (ja) 2009-03-12
US7875916B2 (en) 2011-01-25
TWI382531B (zh) 2013-01-11
US20070069315A1 (en) 2007-03-29
CN101273457A (zh) 2008-09-24
WO2007038107A2 (en) 2007-04-05
WO2007038107A3 (en) 2007-10-04
TW200721474A (en) 2007-06-01

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