CN101273457A - 光电探测器和用来提高收集的n-层结构 - Google Patents
光电探测器和用来提高收集的n-层结构 Download PDFInfo
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- CN101273457A CN101273457A CNA2006800359431A CN200680035943A CN101273457A CN 101273457 A CN101273457 A CN 101273457A CN A2006800359431 A CNA2006800359431 A CN A2006800359431A CN 200680035943 A CN200680035943 A CN 200680035943A CN 101273457 A CN101273457 A CN 101273457A
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- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 description 15
- 238000007667 floating Methods 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
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- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72116805P | 2005-09-28 | 2005-09-28 | |
US60/721,168 | 2005-09-28 | ||
US11/453,354 | 2006-06-15 | ||
US11/453,354 US7875916B2 (en) | 2005-09-28 | 2006-06-15 | Photodetector and n-layer structure for improved collection efficiency |
PCT/US2006/036559 WO2007038107A2 (en) | 2005-09-28 | 2006-09-18 | Photodetector and n-layer structure for improved collection |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101273457A true CN101273457A (zh) | 2008-09-24 |
CN101273457B CN101273457B (zh) | 2011-11-16 |
Family
ID=37581418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800359431A Active CN101273457B (zh) | 2005-09-28 | 2006-09-18 | 光电探测器和用来提高收集的n-层结构 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7875916B2 (zh) |
EP (1) | EP1938379A2 (zh) |
JP (1) | JP2009510777A (zh) |
KR (1) | KR20080050448A (zh) |
CN (1) | CN101273457B (zh) |
TW (1) | TWI382531B (zh) |
WO (1) | WO2007038107A2 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7875916B2 (en) | 2005-09-28 | 2011-01-25 | Eastman Kodak Company | Photodetector and n-layer structure for improved collection efficiency |
GB0725245D0 (en) | 2007-12-28 | 2008-02-06 | Cmosis Nv | Semiconductor detector for electromagnetic or particle radiation |
US8357984B2 (en) * | 2008-02-08 | 2013-01-22 | Omnivision Technologies, Inc. | Image sensor with low electrical cross-talk |
US20090243025A1 (en) * | 2008-03-25 | 2009-10-01 | Stevens Eric G | Pixel structure with a photodetector having an extended depletion depth |
US7948018B2 (en) * | 2008-04-24 | 2011-05-24 | Omnivision Technologies, Inc. | Multilayer image sensor structure for reducing crosstalk |
US20100109060A1 (en) * | 2008-11-06 | 2010-05-06 | Omnivision Technologies Inc. | Image sensor with backside photodiode implant |
US8772891B2 (en) * | 2008-12-10 | 2014-07-08 | Truesense Imaging, Inc. | Lateral overflow drain and channel stop regions in image sensors |
US7875918B2 (en) * | 2009-04-24 | 2011-01-25 | Omnivision Technologies, Inc. | Multilayer image sensor pixel structure for reducing crosstalk |
JP5971565B2 (ja) * | 2011-06-22 | 2016-08-17 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
US8889461B2 (en) | 2012-05-29 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | CIS image sensors with epitaxy layers and methods for forming the same |
EP2816601B1 (en) * | 2013-06-20 | 2017-03-01 | IMEC vzw | Improvements in or relating to pinned photodiodes for use in image sensors |
JP6607777B2 (ja) | 2015-12-28 | 2019-11-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
US4527182A (en) * | 1980-09-19 | 1985-07-02 | Nippon Electric Co., Ltd. | Semiconductor photoelectric converter making excessive charges flow vertically |
JPS6157181A (ja) | 1984-08-28 | 1986-03-24 | Sharp Corp | 固体撮像装置 |
JPS62124771A (ja) | 1985-11-25 | 1987-06-06 | Sharp Corp | 固体撮像装置 |
JPH0316263A (ja) * | 1989-06-14 | 1991-01-24 | Hitachi Ltd | 固体撮像素子 |
US5238864A (en) | 1990-12-21 | 1993-08-24 | Mitsubishi Denki Kabushiki Kaisha | Method of making solid-state imaging device |
JP3128839B2 (ja) * | 1991-01-30 | 2001-01-29 | ソニー株式会社 | 固体撮像装置 |
DE4209536C3 (de) * | 1992-03-24 | 2000-10-05 | Stuttgart Mikroelektronik | Bildzelle für einen Bildaufnehmer-Chip |
JPH09246514A (ja) * | 1996-03-12 | 1997-09-19 | Sharp Corp | 増幅型固体撮像装置 |
EP0809299B1 (en) | 1996-05-22 | 2008-04-23 | Eastman Kodak Company | Active pixel sensor with punch-through reset and cross-talk suppression |
US6297070B1 (en) * | 1996-12-20 | 2001-10-02 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
EP0883187A1 (en) * | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
JP3359258B2 (ja) * | 1997-05-30 | 2002-12-24 | キヤノン株式会社 | 光電変換装置及びそれを用いたイメージセンサ、画像読取装置 |
US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
US5898196A (en) * | 1997-10-10 | 1999-04-27 | International Business Machines Corporation | Dual EPI active pixel cell design and method of making the same |
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US6051857A (en) * | 1998-01-07 | 2000-04-18 | Innovision, Inc. | Solid-state imaging device and method of detecting optical signals using the same |
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US7875916B2 (en) | 2005-09-28 | 2011-01-25 | Eastman Kodak Company | Photodetector and n-layer structure for improved collection efficiency |
US20070069260A1 (en) | 2005-09-28 | 2007-03-29 | Eastman Kodak Company | Photodetector structure for improved collection efficiency |
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-
2006
- 2006-06-15 US US11/453,354 patent/US7875916B2/en active Active
- 2006-09-18 CN CN2006800359431A patent/CN101273457B/zh active Active
- 2006-09-18 KR KR1020087007484A patent/KR20080050448A/ko not_active Application Discontinuation
- 2006-09-18 JP JP2008533438A patent/JP2009510777A/ja active Pending
- 2006-09-18 EP EP06814985A patent/EP1938379A2/en not_active Withdrawn
- 2006-09-18 WO PCT/US2006/036559 patent/WO2007038107A2/en active Application Filing
- 2006-09-27 TW TW095135693A patent/TWI382531B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI382531B (zh) | 2013-01-11 |
TW200721474A (en) | 2007-06-01 |
WO2007038107A3 (en) | 2007-10-04 |
JP2009510777A (ja) | 2009-03-12 |
CN101273457B (zh) | 2011-11-16 |
US20070069315A1 (en) | 2007-03-29 |
KR20080050448A (ko) | 2008-06-05 |
WO2007038107A2 (en) | 2007-04-05 |
US7875916B2 (en) | 2011-01-25 |
EP1938379A2 (en) | 2008-07-02 |
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Owner name: FULL VISION TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK Effective date: 20110705 |
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Effective date of registration: 20110705 Address after: California, USA Applicant after: Full Vision Technology Co., Ltd. Address before: American New York Applicant before: Eastman Kodak Co. |
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Address after: California, USA Patentee after: OmniVision Technologies, Inc. Address before: California, USA Patentee before: Full Vision Technology Co., Ltd. |
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