JP2009505935A - 結晶成長のための装置及び方法 - Google Patents
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
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- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Silicon Compounds (AREA)
Abstract
Description
図1a乃至1cの方法と図2a乃至2bの方法とは類似点があり、主要な相違点は、成長中の固体−液体境界部の形状にあり、図2a乃至2bにおいては断熱容器が含まれていなくても良く又は種結晶の大きさに対して矛盾しない小さなサイズであっても良い点である。単結晶の成長のためには、結晶核生成及び小さな種結晶の成長を可能にするために半球形状が達成される。多結晶成長のためには、坩堝の底部の殆どを覆っている若干凸状のほぼ平らな成長境界が、粒界のほぼ垂直方向の配向による大きな粒子の形成を可能にしている。
Claims (23)
- 坩堝内の液体から結晶を成長させるための装置であり、
前記坩堝を下方から支持している支持構造と、
当該支持構造から抽熱するために当該支持構造に対して移動可能な熱交換器と、
前記坩堝を加熱するための少なくとも1つの加熱部材と、
前記少なくとも1つの加熱部材と前記坩堝との間のある範囲に亘る位置に亘って動くことができる遮蔽部材と、を含む装置。 - 請求項1に記載の装置であり、
前記熱交換器の動作、前記加熱部材の出力及び前記可動の遮蔽部材の位置、を独立して制御するためのコントローラを更に含んでいる装置。 - 請求項1に記載の装置であり、
前記支持構造がグラファイト製の支持ブロックを備えている装置。 - 請求項1に記載の装置であり、
前記加熱部材が前記坩堝の側部に配置された複数の電気加熱部材からなる装置。 - 請求項1に記載の装置であり、
前記熱交換器が、前記支持構造から離れる方向へ動くことができる断熱部材を備えていて、前記支持構造から離れる方向への当該移動によって、前記支持構造からの熱損失を生じさせるようになされている装置。 - 請求項5に記載の装置であり、
前記熱交換器と前記可動の遮蔽部材との動きを独立して制御するコントローラを更に備えている装置。 - 請求項6に記載の装置であり、
前記コントローラが、前記熱交換器を前記支持構造から離れる方向へ移動させ、その後に、前記可動の遮蔽部材を前記少なくとも1つの加熱部材と前記坩堝との間の位置へ移動させるようになされた装置。 - 請求項1に記載の装置であり、
前記加熱部材を包囲するための外側ハウジングを更に備えており、当該ハウジングは床と当該床に設けられた1以上の穴とを備えており、前記可動の遮蔽部材が当該1以上の穴の中を動かされるようになされている装置。 - 請求項1に記載の装置であり、
前記結晶が少なくとも約300kgである装置。 - 坩堝内で液体から結晶を成長させるための装置であり、
結晶の成長中に固定位置にある前記坩堝を下方から支持する支持構造と、
前記坩堝を加熱するために、当該坩堝に対して横方向に配置されている少なくとも1つの加熱部材と、
前記坩堝及び前記支持構造を包囲し且つ前記坩堝の下方に床を備えているハウジングと、
前記少なくとも1つの加熱部材と前記坩堝との間のある範囲に亘る位置に亘って可動の遮蔽部材であり、前記ハウジングの床を貫通して延びている遮蔽部材と、を備えた装置。 - 請求項10に記載の装置であり、
前記支持構造がグラファイト製の支持ブロックを備えている装置。 - 請求項10に記載の装置であり、
前記結晶が少なくとも約300kgである装置。 - 請求項10に記載の装置であり、
前記加熱部材が、前記坩堝の側面に配置された複数の電気加熱部材を備えている装置。 - 坩堝内で液体から結晶を成長させる方法であり、
加熱部材によって前記坩堝を加熱するステップと、
前記坩堝に対して熱接触状態にある熱交換器を使用して前記坩堝から抽熱するステップと、
前記坩堝の各部分に供給される熱を減らすために、前記加熱部材間のある範囲に亘る位置に亘って可動の遮蔽部材を移動させるステップであって、前記遮蔽部材の移動及び抽熱が結晶を所望の方向に沿って凝固させるようになされるステップと、を含む方法。 - 請求項14に記載の方法であり、
前記坩堝から抽熱するステップが、断熱部材を、支持ブロックから離れる方向に動かすステップを含んでいる方法。 - 請求項14に記載の方法であり、
前記坩堝が下方から支持され且つ結晶成長プロセス中に動かされないように前記坩堝を支持構造上に配置するステップを更に含んでいる方法。 - 請求項1に記載の方法であり、
前記熱交換器の動き、加熱部材の出力及び前記可動の遮蔽部材の位置を、独立して制御するステップを更に含んでいる方法。 - 請求項14に記載の方法であり、
前記熱交換器が前記支持構造から離れる方向に移動し、その後に、前記可動の遮蔽部材が、少なくとも1つの加熱部材と前記坩堝との間の位置へと動かされるようになされた方法。 - 請求項14に記載の方法であり、
前記坩堝が、当該坩堝の下方の床によってハウジング内に包囲されており、前記遮蔽部材の動きが前記床の1以上の穴を介して前記遮蔽部材を移動させることを含んでいる方法。 - 請求項14に記載の方法であり、
結果的に得られる結晶が少なくとも約300kgである方法。 - 請求項14に記載の方法であり、
結果的に得られる結晶が多結晶である方法。 - 請求項14に記載の方法であり、
結果的に得られる結晶が単結晶である方法。 - 請求項14に記載の方法であり、
前記坩堝を動かすことなく行われる方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/212,027 US7344596B2 (en) | 2005-08-25 | 2005-08-25 | System and method for crystal growing |
US11/212,027 | 2005-08-25 | ||
PCT/US2006/033203 WO2007025118A2 (en) | 2005-08-25 | 2006-08-25 | System and method for crystal growing |
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JP2009505935A true JP2009505935A (ja) | 2009-02-12 |
JP5344919B2 JP5344919B2 (ja) | 2013-11-20 |
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JP2008528176A Active JP5344919B2 (ja) | 2005-08-25 | 2006-08-25 | 結晶成長のための装置及び方法 |
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US (3) | US7344596B2 (ja) |
EP (1) | EP1937876B1 (ja) |
JP (1) | JP5344919B2 (ja) |
CN (1) | CN101305116B (ja) |
AU (1) | AU2006282917B2 (ja) |
CA (1) | CA2620293C (ja) |
WO (1) | WO2007025118A2 (ja) |
Cited By (2)
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JP2013018700A (ja) * | 2011-07-12 | 2013-01-31 | Sino-American Silicon Products Inc | 結晶成長装置 |
JP2014508710A (ja) * | 2011-03-15 | 2014-04-10 | ジーティーエイティー・コーポレーション | 結晶成長装置のための自動化視覚システム |
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WO2007025118A3 (en) | 2008-02-14 |
US20110146566A1 (en) | 2011-06-23 |
CA2620293C (en) | 2013-11-05 |
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US7918936B2 (en) | 2011-04-05 |
US8177910B2 (en) | 2012-05-15 |
US20080035051A1 (en) | 2008-02-14 |
AU2006282917A1 (en) | 2007-03-01 |
CN101305116A (zh) | 2008-11-12 |
CA2620293A1 (en) | 2007-03-01 |
US20070044707A1 (en) | 2007-03-01 |
EP1937876B1 (en) | 2016-12-28 |
CN101305116B (zh) | 2013-05-22 |
US7344596B2 (en) | 2008-03-18 |
AU2006282917B2 (en) | 2011-11-03 |
EP1937876A4 (en) | 2010-07-07 |
JP5344919B2 (ja) | 2013-11-20 |
WO2007025118A2 (en) | 2007-03-01 |
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