DE3107596A1 - "verfahren zur herstellung von halbleiterscheiben" - Google Patents

"verfahren zur herstellung von halbleiterscheiben"

Info

Publication number
DE3107596A1
DE3107596A1 DE19813107596 DE3107596A DE3107596A1 DE 3107596 A1 DE3107596 A1 DE 3107596A1 DE 19813107596 DE19813107596 DE 19813107596 DE 3107596 A DE3107596 A DE 3107596A DE 3107596 A1 DE3107596 A1 DE 3107596A1
Authority
DE
Germany
Prior art keywords
production
process
semiconductor slices
slices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19813107596
Other languages
English (en)
Inventor
Dieter Dr Seifert
Erhard Prof Dipl Chem Dr Sirtl
Cord Dr Gessert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heliotronic GmbH
Original Assignee
Heliotronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliotronic GmbH filed Critical Heliotronic GmbH
Priority to DE19813107596 priority Critical patent/DE3107596A1/de
Publication of DE3107596A1 publication Critical patent/DE3107596A1/de
Application status is Withdrawn legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911Seed or rod holders
DE19813107596 1981-02-27 1981-02-27 "verfahren zur herstellung von halbleiterscheiben" Withdrawn DE3107596A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19813107596 DE3107596A1 (de) 1981-02-27 1981-02-27 "verfahren zur herstellung von halbleiterscheiben"

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19813107596 DE3107596A1 (de) 1981-02-27 1981-02-27 "verfahren zur herstellung von halbleiterscheiben"
IT8150042A IT8150042D0 (it) 1981-02-27 1981-12-30 Procedimento e dispositivo per laproduzione di piastrine di semiconduttore
US06/344,370 US4461671A (en) 1981-02-27 1982-02-01 Process for the manufacture of semiconductor wafers
FR8203117A FR2500854B1 (fr) 1981-02-27 1982-02-25 Procede de fabrication de plaques semi-conductrices

Publications (1)

Publication Number Publication Date
DE3107596A1 true DE3107596A1 (de) 1982-10-21

Family

ID=6125987

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813107596 Withdrawn DE3107596A1 (de) 1981-02-27 1981-02-27 "verfahren zur herstellung von halbleiterscheiben"

Country Status (4)

Country Link
US (1) US4461671A (de)
DE (1) DE3107596A1 (de)
FR (1) FR2500854B1 (de)
IT (1) IT8150042D0 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048789A1 (de) * 1980-12-23 1982-07-15 Bosch Gmbh Robert Hydrostatische verdraengermaschine

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310827A1 (de) * 1983-03-24 1984-09-27 Bayer Ag Verfahren zur herstellung von grobkristallinem silicium
US4822449A (en) * 1987-06-10 1989-04-18 Massachusetts Institute Of Technology Heat transfer control during crystal growth
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
DE4202455C1 (de) * 1992-01-29 1993-08-19 Siemens Ag, 8000 Muenchen, De
KR100452361B1 (ko) * 2002-01-31 2004-10-12 엘지전자 주식회사 식기세척기 및 그 동작방법
JP4151474B2 (ja) * 2003-05-13 2008-09-17 信越半導体株式会社 単結晶の製造方法及び単結晶
US7344596B2 (en) * 2005-08-25 2008-03-18 Crystal Systems, Inc. System and method for crystal growing
NO329987B1 (no) * 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
TW201348531A (zh) * 2012-05-30 2013-12-01 Hon Hai Prec Ind Co Ltd 晶體生成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2652218A1 (de) * 1976-11-16 1978-05-24 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
DE2850790C2 (de) * 1978-11-23 1987-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
DE2914506C2 (de) * 1979-04-10 1988-03-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048789A1 (de) * 1980-12-23 1982-07-15 Bosch Gmbh Robert Hydrostatische verdraengermaschine

Also Published As

Publication number Publication date
US4461671A (en) 1984-07-24
IT8150042D0 (it) 1981-12-30
FR2500854B1 (fr) 1985-06-07
FR2500854A1 (fr) 1982-09-03

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Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee