JP2009299176A - 移送装置及びこれを備える有機物蒸着装置 - Google Patents
移送装置及びこれを備える有機物蒸着装置 Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 238000007740 vapor deposition Methods 0.000 claims description 81
- 239000011368 organic material Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 8
- 239000005416 organic matter Substances 0.000 claims description 6
- 239000000498 cooling water Substances 0.000 claims description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 17
- 239000010409 thin film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
Abstract
【解決手段】真空チャンバと、真空チャンバ内に設けられ、基板が装着されるステージと、基板に有機物を蒸発させる蒸着源と、蒸着源に連結され、真空チャンバの外側に引き出される工程ユーティリティラインと、蒸着源を基板と平行に移動させ、工程ユーティリティラインが内設される移送装置とを備える。
【選択図】図1
Description
12 ステージ
20 蒸着源
22 マスク
26 センサ
30,30a 移送装置
37 モータ
40 工程ユーティリティライン
Claims (14)
- 真空チャンバと、
該真空チャンバ内に設けられ、基板が装着されるステージと、
前記基板に有機物を蒸発させる蒸着源と、
該蒸着源に連結され、前記真空チャンバの外側に引き出される工程ユーティリティラインと、
前記蒸着源を前記基板と平行に移動させ、前記工程ユーティリティラインが内設される移送装置と
を備えることを特徴とする有機物蒸着装置。 - 前記移送装置の内部は、大気圧に維持されることを特徴とする請求項1に記載の有機物蒸着装置。
- 前記工程ユーティリティラインは、前記蒸着源に電力及び信号を伝達する配線及び冷却水を供給する配管を備えることを特徴とする請求項1に記載の有機物蒸着装置。
- 前記配線は、フレキシブル配線であり、前記配管は、フレキシブル配管であることを特徴とする請求項3に記載の有機物蒸着装置。
- 前記移送装置は、
第1アーム及び第2アームと、
前記真空チャンバの内側に結合して前記工程ユーティリティラインが引き込まれる引込口を形成し、前記第1アームの一側に回転可能に設けられる第1連結部と、
前記第1アームの他側に前記第2アームの一側を回転可能に結合させる第2連結部と、
前記第2アームの他側に前記蒸着源を回転可能に結合させる第3連結部と
を備えることを特徴とする請求項1に記載の有機物蒸着装置。 - 前記真空チャンバの外部に設けられ、前記移送装置に駆動力を供給するモータをさらに備えることを特徴とする請求項5に記載の有機物蒸着装置。
- 前記真空チャンバの内部に設けられ、前記モータの駆動力を回転運動から直線運動に変換するボールスクリューをさらに備えることを特徴とする請求項6に記載の有機物蒸着装置。
- 前記第3連結部と前記蒸着源との間に設けられる接続ボックスをさらに備えることを特徴とする請求項5に記載の有機物蒸着装置。
- 前記接続ボックスと前記蒸着源との間に設けられるパイプラインをさらに備えることを特徴とする請求項8に記載の有機物蒸着装置。
- 前記蒸着源は、有機物材料が備えられた点蒸着源または線形蒸着源であることを特徴とする請求項1に記載の有機物蒸着装置。
- 真空チャンバ内に設けられたステージ側に有機物を蒸発させる蒸着源と、当該蒸着源に連結され、前記真空チャンバの外側に引き出されるフレキシブル工程ユーティリティラインとを備えた有機物蒸着装置に用いられる移送装置であって、
第1アーム及び第2アームと、
前記真空チャンバの内側に結合して前記工程ユーティリティラインが引き込まれる引込口を形成し、前記第1アームの一側に回転可能に設けられる第1連結部と、
前記第1アームの他側に前記第2アームの一側を回転可能に結合させる第2連結部と、
前記第2アームの他側に前記蒸着源を回転可能に結合させる第3連結部とを備え、
前記工程ユーティリティラインが、前記第1連結部、前記第1アーム、前記第2連結部、前記第2アーム、及び前記第3連結部に内設され、前記工程ユーティリティラインが内設される空間が大気圧に維持されることを特徴とする移送装置。 - 前記工程ユーティリティラインは、前記蒸着源に電力及び信号を伝達する配線及び冷却水を供給する配管を備えることを特徴とする請求項11に記載の移送装置。
- 前記真空チャンバの外部に設けられ、駆動力を供給するモータをさらに備えることを特徴とする請求項11に記載の移送装置。
- 前記真空チャンバの内部に設けられ、前記モータの回転駆動力を直線駆動力に変換するボールスクリューをさらに備えることを特徴とする請求項13に記載の移送装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2008-0056254 | 2008-06-16 | ||
KR1020080056254A KR20090130559A (ko) | 2008-06-16 | 2008-06-16 | 이송 장치 및 이를 구비하는 유기물 증착 장치 |
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JP2009299176A true JP2009299176A (ja) | 2009-12-24 |
JP5006286B2 JP5006286B2 (ja) | 2012-08-22 |
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US (1) | US20090308316A1 (ja) |
JP (1) | JP5006286B2 (ja) |
KR (1) | KR20090130559A (ja) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010080230A (ja) * | 2008-09-25 | 2010-04-08 | Hitachi High-Technologies Corp | 有機elデバイス製造装置及び成膜装置並びに真空内配線・配管機構 |
WO2015045980A1 (ja) * | 2013-09-26 | 2015-04-02 | 株式会社 アルバック | 基板処理装置、および、成膜装置 |
JP2015121265A (ja) * | 2013-12-24 | 2015-07-02 | キヤノントッキ株式会社 | 磁性流体軸受装置並びに真空チャンバ |
WO2016031727A1 (ja) * | 2014-08-29 | 2016-03-03 | 国立研究開発法人産業技術総合研究所 | 有機材料膜又は有機無機複合材料膜のレーザー蒸着方法、レーザー蒸着装置 |
JP2017500446A (ja) * | 2013-12-10 | 2017-01-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 有機材料用の蒸発源、有機材料用の蒸発源を有する装置、有機材料用の蒸発源を含む蒸発堆積装置を有するシステム、及び有機材料用の蒸発源を操作するための方法 |
KR101765249B1 (ko) * | 2011-07-13 | 2017-08-08 | 주식회사 원익아이피에스 | 증착장치 |
JP2018154926A (ja) * | 2018-05-17 | 2018-10-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 有機材料用の蒸発源、有機材料用の蒸発源を有する真空チャンバにおいて有機材料を堆積するための堆積装置、及び有機材料を蒸発させるための方法 |
CN109005664A (zh) * | 2017-04-07 | 2018-12-14 | 应用材料公司 | 用于真空处理系统的供应接线导件 |
JP2018204106A (ja) * | 2017-06-02 | 2018-12-27 | キヤノントッキ株式会社 | 真空蒸着装置及びそれを用いたデバイス製造方法 |
JP2020019993A (ja) * | 2018-07-31 | 2020-02-06 | キヤノントッキ株式会社 | 蒸発源及び蒸着装置 |
JP2020143328A (ja) * | 2019-03-05 | 2020-09-10 | キヤノントッキ株式会社 | 真空チャンバ内へのユーティリティライン導入機構、成膜装置、成膜システム |
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Also Published As
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KR20090130559A (ko) | 2009-12-24 |
US20090308316A1 (en) | 2009-12-17 |
JP5006286B2 (ja) | 2012-08-22 |
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