JP5006286B2 - 移送装置及びこれを備える有機物蒸着装置 - Google Patents
移送装置及びこれを備える有機物蒸着装置 Download PDFInfo
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- JP5006286B2 JP5006286B2 JP2008207302A JP2008207302A JP5006286B2 JP 5006286 B2 JP5006286 B2 JP 5006286B2 JP 2008207302 A JP2008207302 A JP 2008207302A JP 2008207302 A JP2008207302 A JP 2008207302A JP 5006286 B2 JP5006286 B2 JP 5006286B2
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- vapor deposition
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- transfer device
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- 230000008021 deposition Effects 0.000 title claims description 20
- 239000011368 organic material Substances 0.000 title claims description 13
- 238000007740 vapor deposition Methods 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 24
- 238000001704 evaporation Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 6
- 239000005416 organic matter Substances 0.000 claims description 5
- 239000000498 cooling water Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 16
- 239000010409 thin film Substances 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Robotics (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
12 ステージ
20 蒸着源
22 マスク
26 センサ
30,30a 移送装置
37 モータ
40 工程ユーティリティライン
Claims (5)
- 真空チャンバと、
該真空チャンバ内に設けられ、基板が装着されるステージと、
前記基板に有機物を蒸発させる蒸着源と、
該蒸着源に連結され、前記真空チャンバの外側に引き出される工程ユーティリティラインと、
前記蒸着源を前記基板と平行に移動させ、前記工程ユーティリティラインが内設される移送装置と
を備え、
前記移送装置の内部は、大気圧に維持され、
前記工程ユーティリティラインは、前記蒸着源に電力及び信号を伝達する配線及び冷却水を供給する配管を備え、
前記移送装置は、
第1アーム及び第2アームと、
前記真空チャンバの内側に結合して前記工程ユーティリティラインが引き込まれる引込口を形成し、前記第1アームの一側に回転可能に設けられる第1連結部と、
前記第1アームの他側に前記第2アームの一側を回転可能に結合させる第2連結部と、
前記第2アームの他側に前記蒸着源を回転可能に結合させる第3連結部と
を備え、
前記第3連結部と前記蒸着源との間に設けられる接続ボックスと、前記接続ボックスと前記蒸着源との間に設けられるパイプラインと、をさらに備えることを特徴とする有機物蒸着装置。 - 前記配線は、フレキシブル配線であり、前記配管は、フレキシブル配管であることを特徴とする請求項1に記載の有機物蒸着装置。
- 前記真空チャンバの外部に設けられ、前記移送装置に駆動力を供給するモータをさらに備えることを特徴とする請求項1に記載の有機物蒸着装置。
- 前記真空チャンバの内部に設けられ、前記モータの駆動力を回転運動から直線運動に変換するボールスクリューをさらに備えることを特徴とする請求項3に記載の有機物蒸着装置。
- 前記蒸着源は、有機物材料が備えられた点蒸着源または線形蒸着源であることを特徴とする請求項1に記載の有機物蒸着装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0056254 | 2008-06-16 | ||
KR1020080056254A KR20090130559A (ko) | 2008-06-16 | 2008-06-16 | 이송 장치 및 이를 구비하는 유기물 증착 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009299176A JP2009299176A (ja) | 2009-12-24 |
JP5006286B2 true JP5006286B2 (ja) | 2012-08-22 |
Family
ID=41413591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008207302A Active JP5006286B2 (ja) | 2008-06-16 | 2008-08-11 | 移送装置及びこれを備える有機物蒸着装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090308316A1 (ja) |
JP (1) | JP5006286B2 (ja) |
KR (1) | KR20090130559A (ja) |
Families Citing this family (22)
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JP5231917B2 (ja) * | 2008-09-25 | 2013-07-10 | 株式会社日立ハイテクノロジーズ | 成膜装置 |
US20120058630A1 (en) * | 2010-09-08 | 2012-03-08 | Veeco Instruments Inc. | Linear Cluster Deposition System |
KR101765249B1 (ko) * | 2011-07-13 | 2017-08-08 | 주식회사 원익아이피에스 | 증착장치 |
KR101959975B1 (ko) * | 2012-07-10 | 2019-07-16 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
KR20170017004A (ko) * | 2013-09-26 | 2017-02-14 | 가부시키가이샤 알박 | 기판처리 장치, 및 성막(成膜) 장치 |
KR102194821B1 (ko) * | 2013-10-17 | 2020-12-24 | 삼성디스플레이 주식회사 | 유기물 증착 장치 및 유기물 증착 방법 |
CN106995911B (zh) * | 2013-12-10 | 2020-07-31 | 应用材料公司 | 蒸发源、沉积设备以及用于蒸发有机材料的方法 |
JP6274856B2 (ja) * | 2013-12-24 | 2018-02-07 | キヤノントッキ株式会社 | 磁性流体軸受装置並びに真空チャンバ |
US9290843B2 (en) * | 2014-02-11 | 2016-03-22 | Lam Research Corporation | Ball screw showerhead module adjuster assembly for showerhead module of semiconductor substrate processing apparatus |
WO2015139776A1 (en) * | 2014-03-21 | 2015-09-24 | Applied Materials, Inc. | Evaporation source for organic material |
WO2015139777A1 (en) * | 2014-03-21 | 2015-09-24 | Applied Materials, Inc. | Evaporation source for organic material |
US10329659B2 (en) | 2014-08-29 | 2019-06-25 | National Institute Of Advanced Industrial Science And Technology | Method for laser deposition of organic material film or organic-inorganic composite material film, and laser deposition apparatus |
KR20180126437A (ko) * | 2017-03-17 | 2018-11-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 장치, 진공 시스템, 및 증착 장치를 동작시키는 방법 |
KR20180129757A (ko) * | 2017-04-07 | 2018-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 프로세싱 시스템을 위한 공급 라인 안내부, 공급 라인 안내부의 사용 및 프로세싱 시스템 |
KR101821926B1 (ko) * | 2017-06-02 | 2018-01-24 | 캐논 톡키 가부시키가이샤 | 진공 증착 장치 및 이를 사용한 디바이스 제조방법 |
KR102407350B1 (ko) * | 2017-07-27 | 2022-06-10 | (주)선익시스템 | 증착챔버용 퍼니스 |
JP6605073B2 (ja) * | 2018-05-17 | 2019-11-13 | アプライド マテリアルズ インコーポレイテッド | 有機材料用の蒸発源、有機材料用の蒸発源を有する真空チャンバにおいて有機材料を堆積するための堆積装置、及び有機材料を蒸発させるための方法 |
JP6627181B1 (ja) * | 2018-07-31 | 2020-01-08 | キヤノントッキ株式会社 | 蒸発源及び蒸着装置 |
JP7324593B2 (ja) * | 2019-03-05 | 2023-08-10 | キヤノントッキ株式会社 | 真空チャンバ内へのユーティリティライン導入機構、成膜装置、成膜システム |
JP2021095609A (ja) | 2019-12-18 | 2021-06-24 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
JP7170016B2 (ja) * | 2020-10-06 | 2022-11-11 | キヤノントッキ株式会社 | 成膜装置 |
KR102526458B1 (ko) * | 2021-06-01 | 2023-04-28 | 주식회사 엘에이티 | 커넥팅 박스 |
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-
2008
- 2008-06-16 KR KR1020080056254A patent/KR20090130559A/ko not_active Application Discontinuation
- 2008-08-11 JP JP2008207302A patent/JP5006286B2/ja active Active
- 2008-12-23 US US12/318,247 patent/US20090308316A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR20090130559A (ko) | 2009-12-24 |
JP2009299176A (ja) | 2009-12-24 |
US20090308316A1 (en) | 2009-12-17 |
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