JP2009295909A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2009295909A JP2009295909A JP2008150417A JP2008150417A JP2009295909A JP 2009295909 A JP2009295909 A JP 2009295909A JP 2008150417 A JP2008150417 A JP 2008150417A JP 2008150417 A JP2008150417 A JP 2008150417A JP 2009295909 A JP2009295909 A JP 2009295909A
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- light emitting
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 239000011347 resin Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000000994 depressogenic effect Effects 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 description 19
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 12
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
- F21V13/08—Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
- F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】基板3上に設けられたリフレクタ4の反射面4aによって囲まれた基板3上の空間5内に発光素子6が配置され、発光素子6が空間5内に充填された樹脂によってモールドされている発光装置1Aであって、リフレクタ4の下部が基板3に形成された凹部12a内に配置され、リフレクタ4の反射面4aの下端と発光素子6との間に凹部12aの側壁12bが介在している。
【選択図】図2
Description
本発明の発光装置の実施形態の一例について図面を参照しつつ詳細に説明する。図1は、本例の発光装置1Aの平面図である。図2は、図1のA−A’断面拡大図、図3は図1のB−B’断面拡大図である。
(実施形態2)
以下、本発明の発光装置の実施形態の他例について図5を参照して説明する。尚、実施形態1にかかる発光装置1Aと共通する構成については図5中に同一の符号を付して説明を省略する。
2 ベース基板
3 配線基板
4 リフレクタ
4a 内周面(反射面)
4b 外周面
5 空間
6 発光素子(LED)
10 絶縁層
11 配線層
12 保護層
20 サブマウント
21a、21b ボンディングワイヤ(銅線)
30 隙間
40 接着材
Claims (9)
- 基板上に設けられたリフレクタの反射面によって囲まれた前記基板上の空間内に発光素子が配置されている発光装置であって、
前記リフレクタの下部が前記基板に形成された凹部内に配置され、前記リフレクタの反射面の下端と前記発光素子との間に前記凹部の側壁が介在していることを特徴とする発光装置。 - 前記基板は、絶縁層と、該絶縁層の上に設けられた配線層と、該配線層の上に設けられた保護層とを少なくとも有し、前記凹部が前記保護層に形成されていることを特徴とする請求項1に記載の発光装置。
- 前記基板の厚みが0.3μmであり、前記凹部の深さが0.1μmであることを特徴とする請求項1又は請求項2に記載の発光装置。
- 基板上に設けられたリフレクタの反射面によって囲まれた前記基板上の空間内に発光素子が配置されている発光装置であって、
前記リフレクタの底面が、前記発光素子から発せられる光を反射可能な樹脂によって前記基板の表面に接着されていることを特徴とする発光装置。 - 前記リフレクタの底面のうち、前記反射面の下端と接する一部の領域のみが前記樹脂によって前記基板の表面に接着されていることを特徴とする請求項4に記載の発光装置。
- 前記樹脂が、白色シリコン系樹脂、白色アクリル系樹脂または反射物質を含有するエポキシ系樹脂のいずれかであることを特徴とする請求項4又は請求項5に記載の発光装置。
- 前記基板が金属製のベース基板の上に重ねて設けられていることを特徴とする請求項1乃至請求項6のいずれかに記載の発光装置。
- 前記発光素子が前記空間内に充填された樹脂によってモールドされ、該樹脂中に、前記発光素子から発せられる光によって励起されて、前記発光素子から発せられる光とは異なる波長の光を発する物質が含まれていることを特徴とする請求項1乃至請求項7のいずれかに記載の発光装置。
- 前記発光素子から発せられる光によって励起されて、前記発光素子から発せられる光とは異なる波長の光を発する物質が含まれたシート材が前記空間の内外の少なくとも一方に設けられていることを特徴とする請求項1乃至請求項7のいずれかに記載の発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008150417A JP5196551B2 (ja) | 2008-06-09 | 2008-06-09 | 発光装置 |
US12/437,025 US8475007B2 (en) | 2008-06-09 | 2009-05-07 | Light emitting device |
US13/795,987 US20130201655A1 (en) | 2008-06-09 | 2013-03-12 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008150417A JP5196551B2 (ja) | 2008-06-09 | 2008-06-09 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009295909A true JP2009295909A (ja) | 2009-12-17 |
JP5196551B2 JP5196551B2 (ja) | 2013-05-15 |
Family
ID=41400140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008150417A Active JP5196551B2 (ja) | 2008-06-09 | 2008-06-09 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8475007B2 (ja) |
JP (1) | JP5196551B2 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011078311A1 (ja) | 2009-12-25 | 2011-06-30 | 大鵬薬品工業株式会社 | 肝細胞癌治療のための抗腫瘍剤又は術後補助化学療法剤 |
JP2013546184A (ja) * | 2010-11-10 | 2013-12-26 | ▲セン▼國光 | カバーの作製方法及びパッケージ化発光ダイオードの作製方法 |
JP2014013879A (ja) * | 2012-06-06 | 2014-01-23 | Nitto Denko Corp | 光半導体用光反射部材およびそれを用いた光半導体実装用基板ならびに光半導体装置 |
JP2014127560A (ja) * | 2012-12-26 | 2014-07-07 | Kyocera Connector Products Corp | 半導体発光素子用ホルダ、半導体発光素子モジュール、照明器具、及び半導体発光素子用ホルダの製造方法 |
KR101522606B1 (ko) * | 2014-02-11 | 2015-05-26 | 주식회사 엘티엘 | 엘이디 모듈용 반사 방열 패널 |
JP2016006914A (ja) * | 2015-10-15 | 2016-01-14 | シャープ株式会社 | 発光装置 |
WO2018016842A1 (ko) * | 2016-07-19 | 2018-01-25 | 서울반도체주식회사 | 발광 다이오드 패키지 및 그것을 제조하는 방법 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2693677T3 (es) * | 2011-11-17 | 2018-12-13 | Lumens Co., Ltd. | Paquete de un dispositivo emisor de luz y retroiluminación que incluye el mismo |
US9822959B2 (en) * | 2012-09-28 | 2017-11-21 | Nichia Corporation | Light emitting device |
TW201516541A (zh) * | 2013-09-23 | 2015-05-01 | Glo Ab | 整合背光單元 |
Citations (3)
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JP2004152808A (ja) * | 2002-10-28 | 2004-05-27 | Matsushita Electric Works Ltd | 半導体発光装置 |
JP2006269079A (ja) * | 2005-03-22 | 2006-10-05 | Hitachi Lighting Ltd | 光源モジュール、液晶表示装置および光源モジュールの製造方法 |
JP2009033088A (ja) * | 2007-06-29 | 2009-02-12 | Sharp Corp | 半導体発光装置、その製造方法およびそれを用いたled照明装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4174366B2 (ja) | 2003-04-23 | 2008-10-29 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP4160916B2 (ja) | 2004-02-24 | 2008-10-08 | 京セラ株式会社 | 発光素子収納用パッケージの製造方法 |
TWI257184B (en) * | 2004-03-24 | 2006-06-21 | Toshiba Lighting & Technology | Lighting apparatus |
JP4516337B2 (ja) | 2004-03-25 | 2010-08-04 | シチズン電子株式会社 | 半導体発光装置 |
KR100752586B1 (ko) * | 2004-06-28 | 2007-08-29 | 쿄세라 코포레이션 | 발광장치 및 조명장치 |
JP2006066531A (ja) | 2004-08-25 | 2006-03-09 | Matsushita Electric Ind Co Ltd | 照明装置及びその製造方法 |
JP5103175B2 (ja) * | 2004-11-01 | 2012-12-19 | パナソニック株式会社 | 照明装置及び表示装置 |
US20080087323A1 (en) * | 2005-05-09 | 2008-04-17 | Kenji Araki | Concentrator Solar Photovoltaic Power Generating Apparatus |
CN100565948C (zh) * | 2005-06-30 | 2009-12-02 | 松下电工株式会社 | 发光装置 |
JP2007250979A (ja) | 2006-03-17 | 2007-09-27 | Zeniya Sangyo Kk | 半導体パッケージ |
JP2007281260A (ja) | 2006-04-07 | 2007-10-25 | Sumitomo Metal Electronics Devices Inc | リフレクターとそれを用いた発光素子収納用パッケージ及びリフレクターに用いるレンズ |
JP2008293902A (ja) * | 2007-05-28 | 2008-12-04 | Funai Electric Co Ltd | バックライト装置及びそれを用いた表示装置 |
-
2008
- 2008-06-09 JP JP2008150417A patent/JP5196551B2/ja active Active
-
2009
- 2009-05-07 US US12/437,025 patent/US8475007B2/en active Active
-
2013
- 2013-03-12 US US13/795,987 patent/US20130201655A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004152808A (ja) * | 2002-10-28 | 2004-05-27 | Matsushita Electric Works Ltd | 半導体発光装置 |
JP2006269079A (ja) * | 2005-03-22 | 2006-10-05 | Hitachi Lighting Ltd | 光源モジュール、液晶表示装置および光源モジュールの製造方法 |
JP2009033088A (ja) * | 2007-06-29 | 2009-02-12 | Sharp Corp | 半導体発光装置、その製造方法およびそれを用いたled照明装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011078311A1 (ja) | 2009-12-25 | 2011-06-30 | 大鵬薬品工業株式会社 | 肝細胞癌治療のための抗腫瘍剤又は術後補助化学療法剤 |
JP2013546184A (ja) * | 2010-11-10 | 2013-12-26 | ▲セン▼國光 | カバーの作製方法及びパッケージ化発光ダイオードの作製方法 |
JP2014013879A (ja) * | 2012-06-06 | 2014-01-23 | Nitto Denko Corp | 光半導体用光反射部材およびそれを用いた光半導体実装用基板ならびに光半導体装置 |
JP2014127560A (ja) * | 2012-12-26 | 2014-07-07 | Kyocera Connector Products Corp | 半導体発光素子用ホルダ、半導体発光素子モジュール、照明器具、及び半導体発光素子用ホルダの製造方法 |
KR101522606B1 (ko) * | 2014-02-11 | 2015-05-26 | 주식회사 엘티엘 | 엘이디 모듈용 반사 방열 패널 |
JP2016006914A (ja) * | 2015-10-15 | 2016-01-14 | シャープ株式会社 | 発光装置 |
WO2018016842A1 (ko) * | 2016-07-19 | 2018-01-25 | 서울반도체주식회사 | 발광 다이오드 패키지 및 그것을 제조하는 방법 |
Also Published As
Publication number | Publication date |
---|---|
US8475007B2 (en) | 2013-07-02 |
US20090303728A1 (en) | 2009-12-10 |
US20130201655A1 (en) | 2013-08-08 |
JP5196551B2 (ja) | 2013-05-15 |
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