JP2009278102A - 前面電極を有する半導体太陽電池及びその製造方法 - Google Patents
前面電極を有する半導体太陽電池及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title description 3
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- 238000000034 method Methods 0.000 claims abstract description 54
- 239000012535 impurity Substances 0.000 claims description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 20
- 238000011065 in-situ storage Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
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- 108091008695 photoreceptors Proteins 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
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- 230000000694 effects Effects 0.000 abstract description 6
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- 125000006850 spacer group Chemical group 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000010936 titanium Substances 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 239000010949 copper Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 239000010937 tungsten Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000001788 irregular Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- -1 tungsten nitride Chemical class 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Abstract
【解決手段】本発明の太陽電池は、光受容表面及びP−N整流接合を有する基板を含む。前記P−N整流接合は、前記基板に提供される第1導電型(例えば、P型)のベース領域及び前記ベース領域と前記光受容表面との間に延長される第2導電型の半導体層を含む。前記半導体層を貫通して前記ベース領域に延長するトレンチがまた提供される。第1及び第2電極は、前記光受容表面付近に提供される。第1電極が前記半導体層に電気的に接続され、第2電極は、前記トレンチの下部に隣接する前記ベース領域に電気的に接続される。
【選択図】図1
Description
110b ベース領域
110a 境界層
111 BSF領域
113 上部トレンチ
114 下部トレンチ
116 多重レベルトレンチ
118 第2トレンチ
120 第2導電型の半導体層
131 反射防止層
132 保護絶縁層
141 第1電極
143 第2電極
115 側壁スペーサ
Claims (19)
- 光受容表面及びP−N整流接合を有する基板と、
前記P−N整流接合は、前記基板に提供される第1導電型のベース領域及び前記ベース領域と前記光受容表面との間に延長される第2導電型の半導体層と、を含み、
前記第2導電型の半導体層を貫通して前記第1導電型のベース領域に延長するトレンチと、
前記トレンチの下部附近で前記第1導電型のベース領域に電気的に接続される第1電極と、
前記第2導電型の半導体層上の透明導電層と、
前記第2導電型の半導体層及び前記透明導電層に電気的に接続される第2電極と、を含むことを特徴とする太陽電池。 - 前記透明導電層は、亜鉛酸化物と、インジウム錫酸化物と、これの組合せからなる群から選択された材料を備えていることを特徴とする請求項1に記載の太陽電池。
- 前記第2電極は、前記トレンチに延長し、前記第2導電型の半導体層の側壁及び前記透明導電層の側壁と接触することを特徴とする請求項1に記載の太陽電池。
- 前記透明伝導層上に反射防止層を追加に備えていることを特徴とする請求項1に記載の太陽電池。
- 前記反射防止層は、前記第2電極を覆っていることを特徴とする請求項4に記載の太陽電池。
- 光受容表面及びP−N整流接合を有する基板と、
前記P−N整流接合は、前記基板に提供される第1導電型のベース領域及び前記ベース領域と前記光受容表面との間に延長される第2導電型の半導体層と、を含み、
前記第2導電型の半導体層を貫通して前記第1導電型のベース領域に延長するトレンチと、
前記トレンチの下部附近で前記第1導電型のベース領域に電気的に接続される第1電極と、
前記光受容表面上の反射防止層と、
前記第2導電型の半導体層に電気的に接続される第2電極と、を含み、
前記第2電極は、前記反射防止層の上部表面と平坦面を形成する平坦な上部表面を有していることを特徴とする太陽電池。 - 第1導電型のベース領域を有するシリコンウエハの表面を局部的な凹凸を形成するように表面処理する段階と、
インシチュドーピングされた第2導電型の非晶質シリコン層を前記処理された表面上に形成し、それによって表面処理された整流ヘテロ接合を形成する段階と、
前記非晶質シリコン層から前記ベース領域に、複数の第2導電型不純物を拡散させ、それによって前記ベース領域の一部を第1導電型から第2導電型に変換して、前記ベース領域に第2導電型の境界層を形成する段階と、
前記非晶質シリコン層及び前記境界層を貫通して前記ベース領域に延長するトレンチを形成する段階と、
前記非晶質シリコン層に電気的に接続された第1電極を形成する段階と、
前記トレンチ下部近辺の前記ベース領域に電気的に接続される第2電極を形成する段階と、を含むことを特徴とする太陽電池の形成方法。 - 前記表面処理する段階は、エッチング液に露出して前記シリコンウエハの表面をエッチングして前記表面上に残余物を形成し、これを追加的なエッチングに対して局部的なエッチングマスクとして利用する段階を備えていることを特徴とする請求項7に記載の太陽電池の形成方法。
- 前記表面処理する段階は、塩素及び弗素を含む乾式エッチング液に前記表面を露出する段階を備えていることを特徴とする請求項8に記載の太陽電池の形成方法。
- 前記ベース領域に第2導電型の境界層を形成する段階は、約500Åから約2000Åの範囲の厚さを有する境界層を形成する段階を備えていることを特徴とする請求項7に記載の太陽電池の形成方法。
- 前記ベース領域に第2導電型の境界層を形成する段階は、約500℃から約900℃の間の温度範囲で前記非晶質シリコン層をアニーリングする段階を備えていることを特徴とする請求項10に記載の太陽電池の形成方法。
- インシチュドーピングされた非晶質シリコン層を形成する段階は、約1019cm−3から約1021cm−3の範囲のドーピング濃度を有する第2導電型のインシチュドーピングされた非晶質シリコン層を堆積する段階を備えていることを特徴とする請求項10に記載の太陽電池の形成方法。
- インシチュドーピングされた非晶質シリコン層を形成する段階は、低圧CVD技術を利用して第2導電型のインシチュドーピングされた非晶質シリコン層を形成する段階を備えていることを特徴とする請求項10に記載の太陽電池の形成方法。
- 第2電極を形成する段階は、前記トレンチの下部に第2電極を蒸着する段階を備え、
第1電極を形成する段階は、前記トレンチの上部附近に第1電極を蒸着する段階を備えていることを特徴とする請求項7に記載の太陽電池の形成方法。 - 第1電極を形成する段階は、前記トレンチの側壁の間に延長する電気的な絶縁分離層で前記第2電極を覆う段階が先行されることを特徴とする請求項14に記載の太陽電池の形成方法。
- トレンチを形成する段階は、前記シリコンウエハを横切って延長する複数の交差する溝を有するグリッド型トレンチを形成する段階を備えていることを特徴とする請求項14に記載の太陽電池の形成方法。
- 前記グリッド型トレンチは、前記シリコン基板の周囲部附近で最外部のリング型トレンチを含み、
前記第1電極を形成する段階は、続いて、前記リング型トレンチ内の前記第1電極の一部及びその下部の電気的な絶縁分離層を選択的に除去して前記第2電極を露出させる段階を備えていることを特徴とする請求項14に記載の太陽電池の形成方法。 - 前記リング型トレンチ内の前記第2電極の露出された部分に、複数のワイヤ結合を形成する段階をさらに備えていることを特徴とする請求項17に記載の太陽電池の形成方法。
- 前記トレンチの下部に第2電極を形成する段階は、前記トレンチの下部に第1導電型の不純物を注入する段階が先行されることを特徴とする請求項17に記載の太陽電池の形成方法。
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US5423308P | 2008-05-19 | 2008-05-19 | |
US61/054,233 | 2008-05-19 | ||
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US61/058,322 | 2008-06-03 | ||
US12/437,583 US20090283145A1 (en) | 2008-05-13 | 2009-05-08 | Semiconductor Solar Cells Having Front Surface Electrodes |
US12/437,595 | 2009-05-08 | ||
US12/437,595 US7964499B2 (en) | 2008-05-13 | 2009-05-08 | Methods of forming semiconductor solar cells having front surface electrodes |
US12/437,583 | 2009-05-08 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015529401A (ja) * | 2012-09-24 | 2015-10-05 | アイメック・ヴェーゼットウェーImec Vzw | シリコン太陽電池の製造方法 |
US10718044B2 (en) | 2016-07-15 | 2020-07-21 | Nippon Steel Corporation | Hot-dip galvanized steel sheet |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200952184A (en) * | 2008-06-03 | 2009-12-16 | Univ Nat Taiwan | Structure of mixed type heterojunction thin film solar cells and its manufacturing method |
KR100997343B1 (ko) * | 2008-07-29 | 2010-11-29 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR101045716B1 (ko) * | 2008-07-29 | 2011-06-30 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
KR101113692B1 (ko) * | 2009-09-17 | 2012-02-27 | 한국과학기술원 | 태양전지 제조방법 및 이에 의하여 제조된 태양전지 |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US8115097B2 (en) | 2009-11-19 | 2012-02-14 | International Business Machines Corporation | Grid-line-free contact for a photovoltaic cell |
TWI385811B (zh) * | 2010-01-18 | 2013-02-11 | Tainergy Tech Co Ltd | 太陽能電池的製造方法 |
JP5484950B2 (ja) * | 2010-02-23 | 2014-05-07 | 三洋電機株式会社 | 太陽電池 |
JP2011210802A (ja) * | 2010-03-29 | 2011-10-20 | Napura:Kk | 太陽電池 |
KR101348752B1 (ko) * | 2010-05-10 | 2014-01-10 | 삼성디스플레이 주식회사 | 태양 전지 및 그 제조 방법 |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US8293645B2 (en) * | 2010-06-30 | 2012-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming photovoltaic cell |
US8216939B2 (en) | 2010-08-20 | 2012-07-10 | Micron Technology, Inc. | Methods of forming openings |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
KR101624989B1 (ko) * | 2010-09-10 | 2016-05-27 | 주식회사 원익아이피에스 | 태양전지기판의 표면처리방법 및 태양전지 제조방법 |
JP5830323B2 (ja) * | 2010-09-21 | 2015-12-09 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 半導体上からホットメルトエッチングレジストを剥離する改良された方法 |
KR101699300B1 (ko) * | 2010-09-27 | 2017-01-24 | 엘지전자 주식회사 | 태양전지 및 이의 제조 방법 |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
TWI455329B (zh) * | 2010-10-26 | 2014-10-01 | Au Optronics Corp | 太陽能電池及其製作方法 |
KR20120079591A (ko) * | 2011-01-05 | 2012-07-13 | 엘지전자 주식회사 | 태양전지 및 그 제조 방법 |
KR101745683B1 (ko) * | 2011-01-14 | 2017-06-09 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
KR101180813B1 (ko) * | 2011-01-18 | 2012-09-07 | 엘지전자 주식회사 | 태양 전지 |
US10396229B2 (en) * | 2011-05-09 | 2019-08-27 | International Business Machines Corporation | Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US20120312361A1 (en) * | 2011-06-08 | 2012-12-13 | International Business Machines Corporation | Emitter structure and fabrication method for silicon heterojunction solar cell |
US8628996B2 (en) | 2011-06-15 | 2014-01-14 | International Business Machines Corporation | Uniformly distributed self-assembled cone-shaped pillars for high efficiency solar cells |
JP2013033794A (ja) * | 2011-08-01 | 2013-02-14 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池およびその製造方法 |
US20130240009A1 (en) * | 2012-03-18 | 2013-09-19 | The Boeing Company | Metal Dendrite-free Solar Cell |
TWI456781B (zh) * | 2012-05-04 | 2014-10-11 | Tsec Corp | 太陽能電池結構及其表面粗糙化方法 |
US20130298973A1 (en) * | 2012-05-14 | 2013-11-14 | Silevo, Inc. | Tunneling-junction solar cell with shallow counter doping layer in the substrate |
WO2013173867A1 (en) * | 2012-05-21 | 2013-11-28 | Newsouth Innovations Pty Limited | Advanced hydrogenation of silicon solar cells |
US8889456B2 (en) | 2012-08-29 | 2014-11-18 | International Business Machines Corporation | Method of fabricating uniformly distributed self-assembled solder dot formation for high efficiency solar cells |
US9461189B2 (en) | 2012-10-04 | 2016-10-04 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
TWI469363B (zh) * | 2012-10-31 | 2015-01-11 | Topcell Solar Internat Co Ltd | 太陽能電池的正面電極及其製造方法 |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
WO2014209421A1 (en) * | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
JP6367940B2 (ja) | 2013-07-25 | 2018-08-01 | コリア インスチチュート オブ インダストリアル テクノロジー | 複合構造のシリコンウエハーの製造方法 |
TWI517430B (zh) * | 2013-12-31 | 2016-01-11 | 東旭能興業有限公司 | 太陽能電池單元及其製造方法 |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
JP2018026388A (ja) * | 2016-08-08 | 2018-02-15 | パナソニックIpマネジメント株式会社 | 太陽電池及び太陽電池の製造方法 |
EP3340317B1 (en) * | 2016-10-25 | 2020-04-01 | Shin-Etsu Chemical Co., Ltd | High photoelectric conversion efficiency solar-cell and manufacturing method for high photoelectric conversion efficiency solar-cell |
US11075313B2 (en) | 2017-06-16 | 2021-07-27 | Utica Leaseco, Llc | Optoelectronic devices manufactured using different growth substrates |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
CN111902948A (zh) * | 2018-03-30 | 2020-11-06 | 株式会社钟化 | 太阳能电池、太阳能电池模块及太阳能电池的制造方法 |
WO2021076979A1 (en) * | 2019-10-18 | 2021-04-22 | Utica Leaseco, Llc | Optoelectronic devices manufactured using different growth substrates |
US11305988B2 (en) * | 2020-09-01 | 2022-04-19 | Aac Acoustic Technologies (Shenzhen) Co., Ltd. | Method for preparing silicon wafer with rough surface and silicon wafer |
CN114551606A (zh) * | 2021-09-16 | 2022-05-27 | 晶科能源(海宁)有限公司 | 一种太阳能电池、光伏组件 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961076A (ja) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | 太陽電池の製造方法 |
JPS63239931A (ja) * | 1987-03-27 | 1988-10-05 | Canon Inc | 堆積膜形成法 |
JPH01290267A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | 光電変換素子の製造方法 |
JPH03206670A (ja) * | 1990-01-08 | 1991-09-10 | Mitsubishi Electric Corp | 太陽電池 |
JPH04212473A (ja) * | 1990-10-22 | 1992-08-04 | Sanyo Electric Co Ltd | 多結晶半導体膜及びその膜を用いた光起電力装置 |
JPH1051015A (ja) * | 1996-07-30 | 1998-02-20 | Opt Techno:Kk | 光電変換素子及びその製造方法 |
JP2002076404A (ja) * | 2000-08-31 | 2002-03-15 | Kyocera Corp | シリコン基板の粗面化法 |
JP2003152207A (ja) * | 2001-11-13 | 2003-05-23 | Toyota Motor Corp | 光電変換素子及びその製造方法 |
JP2003197940A (ja) * | 2001-12-25 | 2003-07-11 | Kyocera Corp | 太陽電池用基板の粗面化法 |
WO2006128427A2 (de) * | 2005-05-29 | 2006-12-07 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur herstellung einer einseitig kontaktierten solarzelle und einseitig kontaktierte solarzelle |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4070206A (en) * | 1976-05-20 | 1978-01-24 | Rca Corporation | Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency |
US4228315A (en) * | 1979-05-04 | 1980-10-14 | Rca Corporation | Solar cell grid patterns |
US4251287A (en) * | 1979-10-01 | 1981-02-17 | The University Of Delaware | Amorphous semiconductor solar cell |
US4301322A (en) * | 1980-04-03 | 1981-11-17 | Exxon Research & Engineering Co. | Solar cell with corrugated bus |
FR2480501A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication |
US4328260A (en) * | 1981-01-23 | 1982-05-04 | Solarex Corporation | Method for applying antireflective coating on solar cell |
AU570309B2 (en) * | 1984-03-26 | 1988-03-10 | Unisearch Limited | Buried contact solar cell |
US5221365A (en) * | 1990-10-22 | 1993-06-22 | Sanyo Electric Co., Ltd. | Photovoltaic cell and method of manufacturing polycrystalline semiconductive film |
JP3203078B2 (ja) * | 1992-12-09 | 2001-08-27 | 三洋電機株式会社 | 光起電力素子 |
US6084175A (en) * | 1993-05-20 | 2000-07-04 | Amoco/Enron Solar | Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts |
AUPP646298A0 (en) * | 1998-10-12 | 1998-11-05 | Pacific Solar Pty Limited | Melt through contact formation method |
JP3781600B2 (ja) | 2000-01-18 | 2006-05-31 | シャープ株式会社 | 太陽電池 |
EP1182709A1 (en) * | 2000-08-14 | 2002-02-27 | IPU, Instituttet For Produktudvikling | A process for depositing metal contacts on a buried grid solar cell and a solar cell obtained by the process |
JP2002124692A (ja) * | 2000-10-13 | 2002-04-26 | Hitachi Ltd | 太陽電池およびその製造方法 |
KR100366349B1 (ko) * | 2001-01-03 | 2002-12-31 | 삼성에스디아이 주식회사 | 태양 전지 및 그의 제조 방법 |
KR100378016B1 (ko) * | 2001-01-03 | 2003-03-29 | 삼성에스디아이 주식회사 | 태양 전지용 반도체 기판의 텍스처링 방법 |
EP1378946A1 (en) * | 2001-03-19 | 2004-01-07 | Shin-Etsu Handotai Co., Ltd | Solar cell and its manufacturing method |
US6524880B2 (en) * | 2001-04-23 | 2003-02-25 | Samsung Sdi Co., Ltd. | Solar cell and method for fabricating the same |
KR100786855B1 (ko) * | 2001-08-24 | 2007-12-20 | 삼성에스디아이 주식회사 | 강유전체를 이용한 태양전지 |
KR100539639B1 (ko) * | 2003-07-22 | 2005-12-29 | 전자부품연구원 | 태양전지 및 그의 제조방법 |
KR100965239B1 (ko) * | 2003-08-20 | 2010-06-22 | 삼성에스디아이 주식회사 | 태양전지를 이용한 발광 블록 |
US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
JP2005150614A (ja) * | 2003-11-19 | 2005-06-09 | Sharp Corp | 太陽電池及びその製造方法 |
US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
KR101042959B1 (ko) * | 2004-06-03 | 2011-06-20 | 삼성에스디아이 주식회사 | 태양전지 및 그 제조방법 |
DE102005013668B3 (de) * | 2005-03-14 | 2006-11-16 | Universität Stuttgart | Solarzelle |
KR100786868B1 (ko) * | 2005-11-03 | 2007-12-20 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
CN101305472B (zh) * | 2005-11-08 | 2011-07-13 | Lg电子株式会社 | 高效太阳能电池及其制备方法 |
KR100728194B1 (ko) * | 2005-11-11 | 2007-06-13 | 삼성에스디아이 주식회사 | 염료 감응형 태양 전지 및 이의 제조 방법 |
KR100658730B1 (ko) * | 2005-11-30 | 2006-12-15 | 삼성에스디아이 주식회사 | 태양 전지 |
KR20070056581A (ko) * | 2005-11-30 | 2007-06-04 | 삼성전자주식회사 | 태양전지용 전극, 그의 제조방법 및 그를 포함하는태양전지 |
KR101156531B1 (ko) * | 2005-12-07 | 2012-06-20 | 삼성에스디아이 주식회사 | 플렉서블 반도체 전극의 제조방법 및 그에 의해 제조된반도체 전극, 이를 이용한 태양전지 |
KR101181820B1 (ko) * | 2005-12-29 | 2012-09-11 | 삼성에스디아이 주식회사 | 태양 전지의 제조 방법 |
KR101084067B1 (ko) * | 2006-01-06 | 2011-11-16 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
KR20070099840A (ko) * | 2006-04-05 | 2007-10-10 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
KR101212198B1 (ko) * | 2006-04-06 | 2012-12-13 | 삼성에스디아이 주식회사 | 태양 전지 |
-
2009
- 2009-05-08 US US12/437,595 patent/US7964499B2/en not_active Expired - Fee Related
- 2009-05-08 US US12/437,583 patent/US20090283145A1/en not_active Abandoned
- 2009-05-13 JP JP2009116800A patent/JP5507117B2/ja not_active Expired - Fee Related
- 2009-05-13 JP JP2009116799A patent/JP2009278101A/ja active Pending
- 2009-05-13 TW TW098115844A patent/TW201003944A/zh unknown
- 2009-05-13 TW TW098115845A patent/TW201005967A/zh unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961076A (ja) * | 1982-09-30 | 1984-04-07 | Toshiba Corp | 太陽電池の製造方法 |
JPS63239931A (ja) * | 1987-03-27 | 1988-10-05 | Canon Inc | 堆積膜形成法 |
JPH01290267A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | 光電変換素子の製造方法 |
JPH03206670A (ja) * | 1990-01-08 | 1991-09-10 | Mitsubishi Electric Corp | 太陽電池 |
JPH04212473A (ja) * | 1990-10-22 | 1992-08-04 | Sanyo Electric Co Ltd | 多結晶半導体膜及びその膜を用いた光起電力装置 |
JPH1051015A (ja) * | 1996-07-30 | 1998-02-20 | Opt Techno:Kk | 光電変換素子及びその製造方法 |
JP2002076404A (ja) * | 2000-08-31 | 2002-03-15 | Kyocera Corp | シリコン基板の粗面化法 |
JP2003152207A (ja) * | 2001-11-13 | 2003-05-23 | Toyota Motor Corp | 光電変換素子及びその製造方法 |
JP2003197940A (ja) * | 2001-12-25 | 2003-07-11 | Kyocera Corp | 太陽電池用基板の粗面化法 |
WO2006128427A2 (de) * | 2005-05-29 | 2006-12-07 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zur herstellung einer einseitig kontaktierten solarzelle und einseitig kontaktierte solarzelle |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015529401A (ja) * | 2012-09-24 | 2015-10-05 | アイメック・ヴェーゼットウェーImec Vzw | シリコン太陽電池の製造方法 |
US10718044B2 (en) | 2016-07-15 | 2020-07-21 | Nippon Steel Corporation | Hot-dip galvanized steel sheet |
Also Published As
Publication number | Publication date |
---|---|
TW201003944A (en) | 2010-01-16 |
JP2009278101A (ja) | 2009-11-26 |
US20090283145A1 (en) | 2009-11-19 |
US7964499B2 (en) | 2011-06-21 |
TW201005967A (en) | 2010-02-01 |
US20090286347A1 (en) | 2009-11-19 |
JP5507117B2 (ja) | 2014-05-28 |
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