JP2015529401A - シリコン太陽電池の製造方法 - Google Patents
シリコン太陽電池の製造方法 Download PDFInfo
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- JP2015529401A JP2015529401A JP2015532351A JP2015532351A JP2015529401A JP 2015529401 A JP2015529401 A JP 2015529401A JP 2015532351 A JP2015532351 A JP 2015532351A JP 2015532351 A JP2015532351 A JP 2015532351A JP 2015529401 A JP2015529401 A JP 2015529401A
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- 238000000034 method Methods 0.000 title claims abstract description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 238000000137 annealing Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 21
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 29
- 238000007747 plating Methods 0.000 claims description 19
- 239000006117 anti-reflective coating Substances 0.000 claims description 14
- 238000003698 laser cutting Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical group 0.000 claims description 5
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 77
- 210000004027 cell Anatomy 0.000 description 39
- 238000010344 co-firing Methods 0.000 description 16
- 230000008901 benefit Effects 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000010304 firing Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012421 spiking Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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- Manufacturing & Machinery (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (16)
- 結晶シリコン太陽電池の製造方法であって、
シリコン基板の表面上に、誘電体層を形成する工程と、
それぞれの太陽電池のために表面コンタクトが形成される所定の位置に、誘電体層を通る開口部を形成する工程と、
その後に、
基板の表面上に第1金属層を形成する工程と、
シリコン基板の裏面上に第2金属層を形成する工程と、
その後に、ピークアニール温度でアニールする工程であって、第1金属層はピークアニール温度でシリサイド形成が可能なように選択される工程と、を含み、
これにより、太陽電池の裏面に、裏面コンタクトと裏面電界領域を形成し、同時に、第1金属層がシリコン基板と直接コンタクトする位置で、表面にシリサイドを形成する方法。 - ピークアニール温度は、570℃から830℃までの温度である請求項1に記載の方法。
- ピークアニール温度は、800℃以下である請求項2に記載の方法。
- 誘電体層は、反射防止コーティングであり、または反射防止コーティングを含む請求項1〜3のいずれかに記載の方法。
- 誘電体層は、単一の誘電体層であり、SiNx層、SiOx層、またはAlOx層を含む請求項1〜4のいずれかに記載の方法。
- 誘電体層は、AlOxおよび/またはSiNxおよび/またはSiOxを含む誘電体層のスタックである請求項1〜4のいずれかに記載の方法。
- 誘電体層は、水素を含み、表面パッシベーションを形成する請求項1〜6のいずれかに記載の方法。
- レーザー切断の手段により、誘電体層を通る開口部を形成する工程を含む請求項1〜7のいずれかに記載の方法。
- 第1金属層は、遷移金属層である請求項1〜8のいずれかに記載の方法。
- 第1金属層は、TiW、TiNまたはTaNを含む請求項1〜7のいずれかに記載の方法。
- 第2金属層は、アルミニウムを含む請求項1〜10のいずれかに記載の方法。
- 更に、第1金属層の未反応な残渣を除去する工程と、残った金属シリサイド層を、続くめっき工程のためのシード層として使用する工程とを含む請求項1〜11のいずれかに記載の方法。
- 第1金属層はAgを含み、第2金属層はAl層であり、ピークアニール温度は約660℃である請求項1〜12のいずれかに記載の方法。
- 第1金属層はAgを含み、第2金属層はAlSi層であり、ピークアニール温度は約570℃である請求項1〜13のいずれかに記載の方法。
- 更に、誘電体層を通る開口部を形成した後、および基板上に金属層を形成する前に、基板を洗浄する工程を含む請求項1〜14のいずれかに記載の方法。
- 更に、シリコン基板の裏面上に第2誘電体層を形成する工程と、第2金属層を形成する前に第2誘電体層を部分的に開口する工程とを含む請求項1〜15のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261704954P | 2012-09-24 | 2012-09-24 | |
US61/704,954 | 2012-09-24 | ||
PCT/EP2013/067456 WO2014044482A2 (en) | 2012-09-24 | 2013-08-22 | Method for fabricating silicon photovoltaic cells |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015529401A true JP2015529401A (ja) | 2015-10-05 |
JP6343613B2 JP6343613B2 (ja) | 2018-06-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015532351A Expired - Fee Related JP6343613B2 (ja) | 2012-09-24 | 2013-08-22 | シリコン太陽電池の製造方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2898545B1 (ja) |
JP (1) | JP6343613B2 (ja) |
CN (1) | CN104584240B (ja) |
WO (1) | WO2014044482A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111710730A (zh) * | 2020-06-29 | 2020-09-25 | 苏州腾晖光伏技术有限公司 | 一种新型p型晶体硅太阳电池及其制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104993019A (zh) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | 一种局部背接触太阳能电池的制备方法 |
CN106158991A (zh) * | 2016-08-02 | 2016-11-23 | 苏州金瑞晨科技有限公司 | 一种应用高温扩散工艺制备的n型电池 |
CN106449794A (zh) * | 2016-09-21 | 2017-02-22 | 晶澳(扬州)太阳能科技有限公司 | 一种高效n型太阳能电池及利用其制造电池组件的方法 |
TWI585988B (zh) * | 2016-10-21 | 2017-06-01 | 茂迪股份有限公司 | 太陽能電池 |
CN108630777B (zh) * | 2018-04-23 | 2019-11-12 | 华南师范大学 | 通过水解离进行太阳能制氢的混合装置及其制造方法 |
EP3576163B1 (en) * | 2018-05-30 | 2021-01-27 | IMEC vzw | Method for in situ surface repassivation in back-contacted solar cells |
EP3971993A1 (en) * | 2020-09-16 | 2022-03-23 | Jbao Technology Ltd. | Manufacturing method for back structure of double-sided p-type sollar cell |
CN114744064B (zh) * | 2020-12-23 | 2023-08-08 | 泰州隆基乐叶光伏科技有限公司 | 太阳能电池及生产方法、光伏组件 |
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-
2013
- 2013-08-22 CN CN201380043227.8A patent/CN104584240B/zh not_active Expired - Fee Related
- 2013-08-22 JP JP2015532351A patent/JP6343613B2/ja not_active Expired - Fee Related
- 2013-08-22 WO PCT/EP2013/067456 patent/WO2014044482A2/en unknown
- 2013-08-22 EP EP13756043.9A patent/EP2898545B1/en not_active Not-in-force
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111710730A (zh) * | 2020-06-29 | 2020-09-25 | 苏州腾晖光伏技术有限公司 | 一种新型p型晶体硅太阳电池及其制备方法 |
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Publication number | Publication date |
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WO2014044482A2 (en) | 2014-03-27 |
EP2898545B1 (en) | 2018-11-14 |
CN104584240A (zh) | 2015-04-29 |
EP2898545A2 (en) | 2015-07-29 |
WO2014044482A3 (en) | 2014-09-18 |
JP6343613B2 (ja) | 2018-06-13 |
CN104584240B (zh) | 2017-04-26 |
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