KR100539639B1 - 태양전지 및 그의 제조방법 - Google Patents
태양전지 및 그의 제조방법 Download PDFInfo
- Publication number
- KR100539639B1 KR100539639B1 KR10-2003-0050215A KR20030050215A KR100539639B1 KR 100539639 B1 KR100539639 B1 KR 100539639B1 KR 20030050215 A KR20030050215 A KR 20030050215A KR 100539639 B1 KR100539639 B1 KR 100539639B1
- Authority
- KR
- South Korea
- Prior art keywords
- solar cell
- thin film
- electrode
- film heater
- type
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 15
- 230000006866 deterioration Effects 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000006731 degradation reaction Methods 0.000 abstract description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
- H01L31/03767—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table presenting light-induced characteristic variations, e.g. Staebler-Wronski effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (14)
- 기판 상부에 제 1 전극, P형 반도체층, 흡수층, N형 반도체층과 제 2 전극이 순차적으로 적층된 태양전지 소자영역과;상기 제 2 전극 상부에 형성된 절연막과;상기 절연막 상부에 형성된 박막히터 패턴과;상기 박막 히터 패턴의 사이에 형성되며 박막 히터 패턴에서 히팅된 온도를 측정할 수 있는 소자로 구성된 태양전지.
- 제 1 항에 있어서,상기 절연막과 박막히터 패턴의 상부에는,상기 박막히터 패턴을 외부로부터 보호하는 보호막이 더 형성되어 있는 것을 특징으로 하는 태양전지.
- 제 1 항에 있어서,상기 흡수층은 도핑되지 않은 비정질 실리콘층이며,상기 P형과 N형 반도체층은 P형과 N형 불순물로 각각 도핑된 비정질 실리콘층인 것을 특징으로 하는 태양전지.
- 제 3 항에 있어서,상기 N형 반도체층과 제 2 전극의 사이에는,P형 결정질 실리콘층, 도핑되지 않은 결정질 실리콘층과 N형 결정질 실리콘층이 순차적으로 적층된 구조가 더 구비되어 있는 것을 특징으로 하는 태양전지.
- 제 4 항에 있어서,상기 P형 비정질 실리콘층, 도핑되지 않은 비정질 실리콘층과 N형 비정질 실리콘층 각각은,상호 대응되는 P형 결정질 실리콘층, 도핑되지 않은 결정질 실리콘층과 N형 결정질 실리콘층 각각의 두께보다 얇게 형성되어 있는 것을 특징으로 하는 태양전지.
- 삭제
- 제 1 항에 있어서,상기 온도를 측정할 수 있는 소자는,상호 이격된 두 전극단자를 갖는 서모커플인 것을 것을 특징으로 하는 태양전지.
- 제 1 항에 있어서,상기 기판은,플라스틱, 실리콘과 글래스(Glass) 중 어느 하나 것을 특징으로 하는 태양전지.
- 제 1 항에 있어서,상기 기판이 플라스틱 또는 실리콘이며,상기 제 1 전극은 금속이고, 상기 제 2 전극은 투명 전도성 산화막(Transparent Conducting Oxide, TCO)인 것을 특징으로 하는 태양전지.
- 제 1 항에 있어서,상기 기판이 글래스이며,상기 제 1 전극은 투명 전도성 산화막이고, 상기 제 2 전극은 금속인 것을 특징으로 하는 태양전지.
- 금속으로된 기판 상부에 P형 반도체층, 흡수층, N형 반도체층과 전극이 순차적으로 적층된 태양전지 소자영역과;상기 전극 상부에 형성된 절연막과;상기 절연막 상부에 형성된 박막히터 패턴과;상기 박막 히터 패턴의 사이에 형성되며 박막 히터 패턴에서 히팅된 온도를 측정할 수 있는 소자와;상기 박막히터 패턴을 외부로부터 보호하는 보호막으로 구성된 태양전지.
- 삭제
- 삭제
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0050215A KR100539639B1 (ko) | 2003-07-22 | 2003-07-22 | 태양전지 및 그의 제조방법 |
US10/733,261 US20050016582A1 (en) | 2003-07-22 | 2003-12-12 | Solar cell and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0050215A KR100539639B1 (ko) | 2003-07-22 | 2003-07-22 | 태양전지 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050011212A KR20050011212A (ko) | 2005-01-29 |
KR100539639B1 true KR100539639B1 (ko) | 2005-12-29 |
Family
ID=34074907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0050215A KR100539639B1 (ko) | 2003-07-22 | 2003-07-22 | 태양전지 및 그의 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050016582A1 (ko) |
KR (1) | KR100539639B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101053790B1 (ko) | 2007-07-10 | 2011-08-03 | 주성엔지니어링(주) | 태양 전지 및 그 제조 방법 |
US7964499B2 (en) * | 2008-05-13 | 2011-06-21 | Samsung Electronics Co., Ltd. | Methods of forming semiconductor solar cells having front surface electrodes |
US20100089441A1 (en) * | 2008-10-09 | 2010-04-15 | Sunlight Photonics Inc. | Method and apparatus for manufacturing thin-film photovoltaic devices |
KR101464002B1 (ko) * | 2008-12-15 | 2014-11-21 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
KR101464001B1 (ko) * | 2008-12-15 | 2014-11-21 | 엘지전자 주식회사 | 태양 전지의 제조 방법 및 에칭 페이스트 |
KR101649372B1 (ko) * | 2009-07-24 | 2016-08-18 | 엘지전자 주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
WO2013042965A1 (en) * | 2011-09-20 | 2013-03-28 | Lg Innotek Co., Ltd. | Solar cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4555586A (en) * | 1984-08-06 | 1985-11-26 | Energy Conversion Devices, Inc. | Photovoltiac device having long term energy conversion stability and method of producing same |
US4599095A (en) * | 1984-10-22 | 1986-07-08 | Honeywell Inc. | Thin bed sorption/desorption apparatus and method for making the same |
US4892592A (en) * | 1987-03-26 | 1990-01-09 | Solarex Corporation | Thin film semiconductor solar cell array and method of making |
US5772431A (en) * | 1995-05-22 | 1998-06-30 | Yazaki Corporation | Thin-film solar cell manufacturing apparatus and manufacturing method |
DE19634580C2 (de) * | 1996-08-27 | 1998-07-02 | Inst Solar Technologien | Verfahren zur Herstellung einer CIS-Bandsolarzelle und Vorrichtung zur Durchführung des Verfahrens |
-
2003
- 2003-07-22 KR KR10-2003-0050215A patent/KR100539639B1/ko active IP Right Grant
- 2003-12-12 US US10/733,261 patent/US20050016582A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050016582A1 (en) | 2005-01-27 |
KR20050011212A (ko) | 2005-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4728370A (en) | Amorphous photovoltaic elements | |
KR100974220B1 (ko) | 태양전지 | |
US20130037086A1 (en) | Photovoltaic device | |
KR100850641B1 (ko) | 고효율 결정질 실리콘 태양전지 및 그 제조방법 | |
US8354585B2 (en) | Solar cell and method of fabricating the same | |
JP2011061197A (ja) | 太陽電池およびその製造方法 | |
KR20140049065A (ko) | 직렬 연결형 박막 태양광 모듈 및 박막 태양 전지의 직렬 연결 방법 | |
CN102244111B (zh) | 一种薄膜太阳能电池 | |
US20140174530A1 (en) | Solar cell and manufacturing method thereof | |
Kovalyuk et al. | Intrinsic conductive oxide–p-InSe solar cells | |
KR100539639B1 (ko) | 태양전지 및 그의 제조방법 | |
Pandey et al. | Numerical analysis of rGO/silver-nanowire-based single-crystal perovskite solar cell | |
US20090308429A1 (en) | Thin-film solar module | |
KR100972780B1 (ko) | 태양전지 및 그 제조방법 | |
US20130220417A1 (en) | Solar cell | |
JP2002076397A (ja) | 光起電力素子の製造方法 | |
Mizrah et al. | Indium—Tin—Oxide—Silicon heterojunction photovoltaic devices | |
Sharma et al. | Si and GaAs SIS heterostructure solar cells using spray-deposited ITO | |
TWI816357B (zh) | 太陽能電池模組及其製備方法 | |
CN102593230B (zh) | 太阳能电池 | |
US20230178673A1 (en) | Design and Fabrication Method of Hetero-structured Solar Cell Using Non-Crystalline a-Si/poly-Si | |
KR100946683B1 (ko) | 태양전지 및 그 제조방법 | |
Uchida et al. | Amorphous silicon photovoltaic modules | |
Duttagupta et al. | Porous microcrystalline silicon solar cells | |
CN117976741A (zh) | 背接触太阳能电池片、电池组件和光伏系统 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121220 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20131219 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20141222 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20151221 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20161222 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20171222 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190123 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20191125 Year of fee payment: 15 |