JP2009260315A - Ｓｏｉ基板の作製方法及び半導体装置の作製方法 - Google Patents

Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Download PDF

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Publication number
JP2009260315A
JP2009260315A JP2009069955A JP2009069955A JP2009260315A JP 2009260315 A JP2009260315 A JP 2009260315A JP 2009069955 A JP2009069955 A JP 2009069955A JP 2009069955 A JP2009069955 A JP 2009069955A JP 2009260315 A JP2009260315 A JP 2009260315A
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Prior art keywords
single crystal
crystal semiconductor
semiconductor substrate
substrate
oxide film
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Japanese (ja)
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JP2009260315A5 (https=
Inventor
Shunpei Yamazaki
舜平 山崎
Eriko Nishida
恵里子 西田
Takashi Shimazu
貴志 島津
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009069955A priority Critical patent/JP2009260315A/ja
Publication of JP2009260315A publication Critical patent/JP2009260315A/ja
Publication of JP2009260315A5 publication Critical patent/JP2009260315A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
JP2009069955A 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009260315A (ja)

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JP2009069955A JP2009260315A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

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JP2008079650 2008-03-26
JP2009069955A JP2009260315A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

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JP2009260315A true JP2009260315A (ja) 2009-11-05
JP2009260315A5 JP2009260315A5 (https=) 2012-03-29

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US (1) US8021958B2 (https=)
JP (1) JP2009260315A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013030783A (ja) * 2009-12-25 2013-02-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015122530A (ja) * 2009-11-27 2015-07-02 株式会社半導体エネルギー研究所 半導体装置
JP2021141100A (ja) * 2020-03-02 2021-09-16 株式会社東京精密 エッチング処理後シリコンウェハの表面改質の方法

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JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
CN101559627B (zh) * 2009-05-25 2011-12-14 天津大学 粒子束辅助单晶脆性材料超精密加工方法
US7965498B2 (en) * 2009-09-30 2011-06-21 Apple Inc. Cover glass to housing interface system
US8338737B2 (en) 2009-09-30 2012-12-25 Apple Inc. Computer housing
US8970446B2 (en) 2011-07-01 2015-03-03 Apple Inc. Electronic device with magnetic antenna mounting
DE102014006328A1 (de) * 2014-04-30 2015-11-05 Siltectra Gmbh Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper
US10593818B2 (en) * 2016-12-09 2020-03-17 The Boeing Company Multijunction solar cell having patterned emitter and method of making the solar cell

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WO2007142911A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
WO2007142852A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Producing soi structure using ion shower

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KR101436116B1 (ko) * 2007-04-27 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 그 제조 방법, 및 반도체 장치
JP5289805B2 (ja) * 2007-05-10 2013-09-11 株式会社半導体エネルギー研究所 半導体装置製造用基板の作製方法
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EP1993127B1 (en) * 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
US7745268B2 (en) * 2007-06-01 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere
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JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
US7858495B2 (en) * 2008-02-04 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0254532A (ja) * 1988-08-17 1990-02-23 Sony Corp Ｓｏｉ基板の製造方法
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP2000294754A (ja) * 1999-04-07 2000-10-20 Denso Corp 半導体基板及び半導体基板の製造方法並びに半導体基板製造装置
JP2003509838A (ja) * 1999-08-20 2003-03-11 エス オー イ テク シリコン オン インシュレータ テクノロジース マイクロエレクトロニクス用基板の処理方法及び該方法により得られた基板
WO2005067053A1 (ja) * 2004-01-08 2005-07-21 Sumco Corporation Soiウェーハの作製方法
JP2005203596A (ja) * 2004-01-16 2005-07-28 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置および電子機器
WO2007142911A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
WO2007142852A2 (en) * 2006-05-31 2007-12-13 Corning Incorporated Producing soi structure using ion shower

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015122530A (ja) * 2009-11-27 2015-07-02 株式会社半導体エネルギー研究所 半導体装置
US9570628B2 (en) 2009-11-27 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013030783A (ja) * 2009-12-25 2013-02-07 Semiconductor Energy Lab Co Ltd 半導体装置
US9006025B2 (en) 2009-12-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9543445B2 (en) 2009-12-25 2017-01-10 Semiconductor Energy Laborartory Co., Ltd. Semiconductor device with oxide semiconductor layer
KR101811203B1 (ko) * 2009-12-25 2017-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제작하기 위한 방법
JP2021141100A (ja) * 2020-03-02 2021-09-16 株式会社東京精密 エッチング処理後シリコンウェハの表面改質の方法
JP7558666B2 (ja) 2020-03-02 2024-10-01 株式会社東京精密 エッチング処理後シリコンウェハの表面改質の方法

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