JP2009260298A5 - - Google Patents

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Publication number
JP2009260298A5
JP2009260298A5 JP2009062728A JP2009062728A JP2009260298A5 JP 2009260298 A5 JP2009260298 A5 JP 2009260298A5 JP 2009062728 A JP2009062728 A JP 2009062728A JP 2009062728 A JP2009062728 A JP 2009062728A JP 2009260298 A5 JP2009260298 A5 JP 2009260298A5
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor layer
concentration distribution
layer
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Application number
JP2009062728A
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English (en)
Japanese (ja)
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JP2009260298A (ja
JP5576617B2 (ja
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Priority to JP2009062728A priority Critical patent/JP5576617B2/ja
Priority claimed from JP2009062728A external-priority patent/JP5576617B2/ja
Publication of JP2009260298A publication Critical patent/JP2009260298A/ja
Publication of JP2009260298A5 publication Critical patent/JP2009260298A5/ja
Application granted granted Critical
Publication of JP5576617B2 publication Critical patent/JP5576617B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009062728A 2008-03-17 2009-03-16 単結晶半導体層の結晶性評価方法 Expired - Fee Related JP5576617B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009062728A JP5576617B2 (ja) 2008-03-17 2009-03-16 単結晶半導体層の結晶性評価方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008067295 2008-03-17
JP2008067295 2008-03-17
JP2009062728A JP5576617B2 (ja) 2008-03-17 2009-03-16 単結晶半導体層の結晶性評価方法

Publications (3)

Publication Number Publication Date
JP2009260298A JP2009260298A (ja) 2009-11-05
JP2009260298A5 true JP2009260298A5 (enExample) 2012-04-12
JP5576617B2 JP5576617B2 (ja) 2014-08-20

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ID=41387267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009062728A Expired - Fee Related JP5576617B2 (ja) 2008-03-17 2009-03-16 単結晶半導体層の結晶性評価方法

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JP (1) JP5576617B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119534507B (zh) * 2024-11-05 2025-10-03 华中科技大学 钙钛矿单晶品质评价方法、程序产品，介质及电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111955B2 (ja) * 1985-04-22 1995-11-29 工業技術院長 熔融結晶化膜の処理方法
JPH1055959A (ja) * 1996-08-09 1998-02-24 Toshiba Corp 薄膜製造方法およびその製造装置ならびに薄膜トランジスタ
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP4737366B2 (ja) * 2004-02-25 2011-07-27 セイコーエプソン株式会社 半導体装置の製造方法

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