JP2009246348A5 - - Google Patents

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Publication number
JP2009246348A5
JP2009246348A5 JP2009051960A JP2009051960A JP2009246348A5 JP 2009246348 A5 JP2009246348 A5 JP 2009246348A5 JP 2009051960 A JP2009051960 A JP 2009051960A JP 2009051960 A JP2009051960 A JP 2009051960A JP 2009246348 A5 JP2009246348 A5 JP 2009246348A5
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JP
Japan
Prior art keywords
film
resist mask
forming
etching
conductive film
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Granted
Application number
JP2009051960A
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English (en)
Japanese (ja)
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JP2009246348A (ja
JP5371487B2 (ja
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Priority to JP2009051960A priority Critical patent/JP5371487B2/ja
Priority claimed from JP2009051960A external-priority patent/JP5371487B2/ja
Publication of JP2009246348A publication Critical patent/JP2009246348A/ja
Publication of JP2009246348A5 publication Critical patent/JP2009246348A5/ja
Application granted granted Critical
Publication of JP5371487B2 publication Critical patent/JP5371487B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009051960A 2008-03-10 2009-03-05 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法 Expired - Fee Related JP5371487B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009051960A JP5371487B2 (ja) 2008-03-10 2009-03-05 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008058906 2008-03-10
JP2008058906 2008-03-10
JP2009051960A JP5371487B2 (ja) 2008-03-10 2009-03-05 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2009246348A JP2009246348A (ja) 2009-10-22
JP2009246348A5 true JP2009246348A5 (OSRAM) 2012-03-01
JP5371487B2 JP5371487B2 (ja) 2013-12-18

Family

ID=41054032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009051960A Expired - Fee Related JP5371487B2 (ja) 2008-03-10 2009-03-05 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法

Country Status (5)

Country Link
US (1) US7989275B2 (OSRAM)
JP (1) JP5371487B2 (OSRAM)
KR (1) KR101521833B1 (OSRAM)
CN (1) CN101533781B (OSRAM)
TW (1) TWI509700B (OSRAM)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
US7989234B2 (en) 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
US8202769B2 (en) 2009-03-11 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5539765B2 (ja) * 2009-03-26 2014-07-02 株式会社半導体エネルギー研究所 トランジスタの作製方法
CN101964309B (zh) * 2010-09-01 2012-08-01 友达光电股份有限公司 薄膜晶体管的制造方法
JP5667868B2 (ja) * 2010-12-24 2015-02-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103035653A (zh) * 2012-10-10 2013-04-10 深圳市华星光电技术有限公司 薄膜晶体管像素结构及其制作方法
KR102148486B1 (ko) * 2013-12-31 2020-08-26 엘지디스플레이 주식회사 표시장치용 박막 트랜지스터 어레이 기판 및 그 제조방법
CN108780823B (zh) 2016-01-07 2022-04-19 纽约州立大学研究基金会 多井硒器件及其制造方法
JP6973647B2 (ja) * 2018-06-27 2021-12-01 三菱電機株式会社 半導体装置の製造方法
US11016383B2 (en) * 2018-08-31 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pellicle for an EUV lithography mask and a method of manufacturing thereof
KR102795888B1 (ko) 2019-06-07 2025-04-17 삼성디스플레이 주식회사 표시 장치의 제조 방법

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JPS60242674A (ja) * 1984-05-17 1985-12-02 Oki Electric Ind Co Ltd 薄膜トランジスタ及びその製造方法
JPS6490560A (en) * 1987-10-01 1989-04-07 Casio Computer Co Ltd Thin-film transistor
JPH0311744A (ja) 1989-06-09 1991-01-21 Citizen Watch Co Ltd 薄膜トランジスタの製造方法
JPH0519297A (ja) * 1991-07-15 1993-01-29 Nec Corp 液晶表示パネル，液晶表示装置及びそれらの製造方法
JPH06194687A (ja) * 1992-10-30 1994-07-15 Nec Corp 透過型アクティブマトリクス型液晶素子
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JP3270674B2 (ja) * 1995-01-17 2002-04-02 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
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US6493048B1 (en) 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
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TWI239651B (en) * 2004-04-30 2005-09-11 Quanta Display Inc Manufacturing method of a thin film transistor-liquid crystal display
KR101201017B1 (ko) 2005-06-27 2012-11-13 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101225440B1 (ko) 2005-06-30 2013-01-25 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
JP5105811B2 (ja) 2005-10-14 2012-12-26 株式会社半導体エネルギー研究所 表示装置
US8149346B2 (en) 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
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US7749820B2 (en) * 2008-03-07 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof

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