JP2009239294A5 - - Google Patents

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Publication number
JP2009239294A5
JP2009239294A5 JP2009125100A JP2009125100A JP2009239294A5 JP 2009239294 A5 JP2009239294 A5 JP 2009239294A5 JP 2009125100 A JP2009125100 A JP 2009125100A JP 2009125100 A JP2009125100 A JP 2009125100A JP 2009239294 A5 JP2009239294 A5 JP 2009239294A5
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JP
Japan
Prior art keywords
emitting diode
light emitting
light
contact
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2009125100A
Other languages
English (en)
Japanese (ja)
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JP2009239294A (ja
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Publication date
Application filed filed Critical
Publication of JP2009239294A publication Critical patent/JP2009239294A/ja
Publication of JP2009239294A5 publication Critical patent/JP2009239294A5/ja
Ceased legal-status Critical Current

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JP2009125100A 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード Ceased JP2009239294A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000508147A Division JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Publications (2)

Publication Number Publication Date
JP2009239294A JP2009239294A (ja) 2009-10-15
JP2009239294A5 true JP2009239294A5 (https=) 2011-02-24

Family

ID=25443701

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000508147A Expired - Lifetime JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード
JP2009125100A Ceased JP2009239294A (ja) 1997-08-29 2009-05-25 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2000508147A Expired - Lifetime JP4597363B2 (ja) 1997-08-29 1998-08-28 標準パッケージで使用される信頼性が高い強固な第ｉｉｉ族発光ダイオード

Country Status (11)

Country Link
US (1) US6946682B2 (https=)
EP (1) EP1018169B1 (https=)
JP (2) JP4597363B2 (https=)
KR (1) KR100651145B1 (https=)
CN (1) CN1129192C (https=)
AT (1) ATE279789T1 (https=)
AU (1) AU9295098A (https=)
CA (1) CA2299379C (https=)
DE (1) DE69827025T2 (https=)
ES (1) ES2226169T3 (https=)
WO (1) WO1999010936A2 (https=)

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CA2298491C (en) 1997-07-25 2009-10-06 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
KR100651145B1 (ko) * 1997-08-29 2006-11-28 크리 인코포레이티드 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
CA2504098A1 (en) * 2002-12-20 2004-07-15 Cree, Inc. Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
WO2005124879A1 (en) * 2004-06-18 2005-12-29 Showa Denko K.K. Group iii nitride semiconductor light emitting device
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
WO2013184654A1 (en) 2012-06-04 2013-12-12 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
WO2014011964A1 (en) * 2012-07-12 2014-01-16 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US12604571B2 (en) 2021-10-07 2026-04-14 Samsung Electronics Co., Ltd. Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof

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US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
JPH04264781A (ja) 1991-02-20 1992-09-21 Eastman Kodak Japan Kk 発光ダイオードアレイ
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US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
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KR100651145B1 (ko) * 1997-08-29 2006-11-28 크리 인코포레이티드 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드

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