AU9295098A - Robust group iii light emitting diode for high reliability in standard packagingapplications - Google Patents

Robust group iii light emitting diode for high reliability in standard packagingapplications

Info

Publication number
AU9295098A
AU9295098A AU92950/98A AU9295098A AU9295098A AU 9295098 A AU9295098 A AU 9295098A AU 92950/98 A AU92950/98 A AU 92950/98A AU 9295098 A AU9295098 A AU 9295098A AU 9295098 A AU9295098 A AU 9295098A
Authority
AU
Australia
Prior art keywords
diode
group iii
light emitting
emitting diode
standard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU92950/98A
Other languages
English (en)
Inventor
John Adam Edmond
Gerald H Negley
David B. Slater Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Publication of AU9295098A publication Critical patent/AU9295098A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
AU92950/98A 1997-08-29 1998-08-28 Robust group iii light emitting diode for high reliability in standard packagingapplications Abandoned AU9295098A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29
US08920409 1997-08-29
PCT/US1998/017849 WO1999010936A2 (en) 1997-08-29 1998-08-28 Robust group iii nitride light emitting diode for high reliability in standard applications

Publications (1)

Publication Number Publication Date
AU9295098A true AU9295098A (en) 1999-03-16

Family

ID=25443701

Family Applications (1)

Application Number Title Priority Date Filing Date
AU92950/98A Abandoned AU9295098A (en) 1997-08-29 1998-08-28 Robust group iii light emitting diode for high reliability in standard packagingapplications

Country Status (11)

Country Link
US (1) US6946682B2 (https=)
EP (1) EP1018169B1 (https=)
JP (2) JP4597363B2 (https=)
KR (1) KR100651145B1 (https=)
CN (1) CN1129192C (https=)
AT (1) ATE279789T1 (https=)
AU (1) AU9295098A (https=)
CA (1) CA2299379C (https=)
DE (1) DE69827025T2 (https=)
ES (1) ES2226169T3 (https=)
WO (1) WO1999010936A2 (https=)

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EP1014455B1 (en) 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
ES2226169T3 (es) * 1997-08-29 2005-03-16 Cree, Inc. Diodo emisor de luz del grupo iii robusto para una alta fiabilidad en aplicaciones habituales de encapsulacion.
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (en) 1999-03-04 2000-09-08 Nichia Corporation Nitride semiconductor laser element
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
KR101020387B1 (ko) * 2002-12-20 2011-03-08 크리 인코포레이티드 반도체 메사 구조와 도전형 접합을 포함하는 전자 소자 및그 제조방법
WO2005124879A1 (en) * 2004-06-18 2005-12-29 Showa Denko K.K. Group iii nitride semiconductor light emitting device
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
WO2007081719A2 (en) 2006-01-05 2007-07-19 Illumitex, Inc. Separate optical device for directing light from an led
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US8969198B2 (en) 2012-06-04 2015-03-03 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9312448B2 (en) * 2012-07-12 2016-04-12 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US12604571B2 (en) 2021-10-07 2026-04-14 Samsung Electronics Co., Ltd. Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof

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US4860069A (en) * 1983-09-24 1989-08-22 Semiconductor Energy Laboratory Co., Ltd. Non-single-cry stal semiconductor light emitting device
US4866005A (en) * 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JPH0268968A (ja) * 1988-09-02 1990-03-08 Sharp Corp 化合物半導体発光素子
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
JPH04264781A (ja) 1991-02-20 1992-09-21 Eastman Kodak Japan Kk 発光ダイオードアレイ
JPH04365382A (ja) * 1991-06-13 1992-12-17 Toshiba Corp 半導体発光装置及びその駆動方法
JP2560963B2 (ja) * 1993-03-05 1996-12-04 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
US5416342A (en) * 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5404282A (en) * 1993-09-17 1995-04-04 Hewlett-Packard Company Multiple light emitting diode module
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07326823A (ja) * 1994-05-30 1995-12-12 Canon Inc 光半導体素子及びその製造方法
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5592501A (en) * 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US5739554A (en) * 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JP2877063B2 (ja) * 1995-11-06 1999-03-31 松下電器産業株式会社 半導体発光素子
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication
US5813752A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
ES2226169T3 (es) * 1997-08-29 2005-03-16 Cree, Inc. Diodo emisor de luz del grupo iii robusto para una alta fiabilidad en aplicaciones habituales de encapsulacion.

Also Published As

Publication number Publication date
CA2299379A1 (en) 1999-03-04
EP1018169B1 (en) 2004-10-13
EP1018169A2 (en) 2000-07-12
KR20010023492A (ko) 2001-03-26
CN1129192C (zh) 2003-11-26
JP4597363B2 (ja) 2010-12-15
US20040026707A1 (en) 2004-02-12
DE69827025D1 (de) 2004-11-18
CN1269056A (zh) 2000-10-04
ATE279789T1 (de) 2004-10-15
JP2001514451A (ja) 2001-09-11
CA2299379C (en) 2006-05-30
JP2009239294A (ja) 2009-10-15
KR100651145B1 (ko) 2006-11-28
WO1999010936A2 (en) 1999-03-04
DE69827025T2 (de) 2005-09-08
WO1999010936A3 (en) 1999-05-14
US6946682B2 (en) 2005-09-20
ES2226169T3 (es) 2005-03-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase