KR100651145B1 - 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드 - Google Patents

표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드 Download PDF

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KR100651145B1
KR100651145B1 KR1020007002138A KR20007002138A KR100651145B1 KR 100651145 B1 KR100651145 B1 KR 100651145B1 KR 1020007002138 A KR1020007002138 A KR 1020007002138A KR 20007002138 A KR20007002138 A KR 20007002138A KR 100651145 B1 KR100651145 B1 KR 100651145B1
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light emitting
diode
emitting diode
layer
gallium nitride
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KR20010023492A (ko
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슬레이터데이비드비.주니어
니글리제럴드에이치.
에드몬드죤애덤
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크리 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
KR1020007002138A 1997-08-29 1998-08-28 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드 Expired - Lifetime KR100651145B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92040997A 1997-08-29 1997-08-29
US08/920,409 1997-08-29
PCT/US1998/017849 WO1999010936A2 (en) 1997-08-29 1998-08-28 Robust group iii nitride light emitting diode for high reliability in standard applications

Publications (2)

Publication Number Publication Date
KR20010023492A KR20010023492A (ko) 2001-03-26
KR100651145B1 true KR100651145B1 (ko) 2006-11-28

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KR1020007002138A Expired - Lifetime KR100651145B1 (ko) 1997-08-29 1998-08-28 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드

Country Status (11)

Country Link
US (1) US6946682B2 (https=)
EP (1) EP1018169B1 (https=)
JP (2) JP4597363B2 (https=)
KR (1) KR100651145B1 (https=)
CN (1) CN1129192C (https=)
AT (1) ATE279789T1 (https=)
AU (1) AU9295098A (https=)
CA (1) CA2299379C (https=)
DE (1) DE69827025T2 (https=)
ES (1) ES2226169T3 (https=)
WO (1) WO1999010936A2 (https=)

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JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6926435B2 (en) * 2001-08-23 2005-08-09 Wavien, Inc. Led illumination engine using a reflector
US6683327B2 (en) 2001-11-13 2004-01-27 Lumileds Lighting U.S., Llc Nucleation layer for improved light extraction from light emitting devices
US6900067B2 (en) 2002-12-11 2005-05-31 Lumileds Lighting U.S., Llc Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
CA2504098A1 (en) * 2002-12-20 2004-07-15 Cree, Inc. Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers and related devices
WO2005124879A1 (en) * 2004-06-18 2005-12-29 Showa Denko K.K. Group iii nitride semiconductor light emitting device
US7432536B2 (en) * 2004-11-04 2008-10-07 Cree, Inc. LED with self aligned bond pad
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
WO2013184654A1 (en) 2012-06-04 2013-12-12 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
WO2014011964A1 (en) * 2012-07-12 2014-01-16 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9923118B2 (en) * 2013-02-25 2018-03-20 Sensor Electronic Technology, Inc. Semiconductor structure with inhomogeneous regions
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US12604571B2 (en) 2021-10-07 2026-04-14 Samsung Electronics Co., Ltd. Light emitting diodes with lattice matching sidewall passivation layer and method of making thereof

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KR960706696A (ko) * 1993-12-13 1996-12-09 에프. 니얼 헌티 실리콘 카바이드와 갈륨 나이트라이드 사이의 버퍼 구조와 이 구조로 형성되는 반도체 장치
KR100286699B1 (ko) * 1993-01-28 2001-04-16 오가와 에이지 질화갈륨계 3-5족 화합물 반도체 발광디바이스 및 그 제조방법

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KR100651145B1 (ko) * 1997-08-29 2006-11-28 크리 인코포레이티드 표준 응용에서 고신뢰성을 위한 강한 3족 질화물 발광다이오드

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KR960004597B1 (ko) * 1991-06-13 1996-04-09 가부시끼가이샤 도시바 반도체 발광 장치 및 그 구동 방법
KR100286699B1 (ko) * 1993-01-28 2001-04-16 오가와 에이지 질화갈륨계 3-5족 화합물 반도체 발광디바이스 및 그 제조방법
KR960706696A (ko) * 1993-12-13 1996-12-09 에프. 니얼 헌티 실리콘 카바이드와 갈륨 나이트라이드 사이의 버퍼 구조와 이 구조로 형성되는 반도체 장치

Also Published As

Publication number Publication date
JP2001514451A (ja) 2001-09-11
JP2009239294A (ja) 2009-10-15
EP1018169A2 (en) 2000-07-12
CA2299379A1 (en) 1999-03-04
US20040026707A1 (en) 2004-02-12
DE69827025T2 (de) 2005-09-08
WO1999010936A3 (en) 1999-05-14
KR20010023492A (ko) 2001-03-26
WO1999010936A2 (en) 1999-03-04
JP4597363B2 (ja) 2010-12-15
CA2299379C (en) 2006-05-30
CN1269056A (zh) 2000-10-04
AU9295098A (en) 1999-03-16
ES2226169T3 (es) 2005-03-16
ATE279789T1 (de) 2004-10-15
CN1129192C (zh) 2003-11-26
US6946682B2 (en) 2005-09-20
DE69827025D1 (de) 2004-11-18
EP1018169B1 (en) 2004-10-13

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