JP2009197336A - 蒸発源アセンブリ及びそれを用いた蒸着装置 - Google Patents
蒸発源アセンブリ及びそれを用いた蒸着装置 Download PDFInfo
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- JP2009197336A JP2009197336A JP2009137662A JP2009137662A JP2009197336A JP 2009197336 A JP2009197336 A JP 2009197336A JP 2009137662 A JP2009137662 A JP 2009137662A JP 2009137662 A JP2009137662 A JP 2009137662A JP 2009197336 A JP2009197336 A JP 2009197336A
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- 238000001704 evaporation Methods 0.000 title claims abstract description 161
- 230000008020 evaporation Effects 0.000 title claims abstract description 160
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims description 91
- 238000003860 storage Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 90
- 239000010408 film Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】蒸発源アセンブリ30を構成する外部ハウジング50はガイド80aを有していて、蒸発源アセンブリを構成する蒸発源60、70が有するノズル部の貫通ホール222、322を所定の角度で傾けさせることによって、それぞれの蒸発源から吐出される蒸着物質が被蒸着基板の同一の領域に蒸着されるように誘導し、均一な粗さと均一な厚さを有する薄膜を形成できるようにする。
【選択図】図6
Description
20 チャンバ、
30 蒸発源アセンブリ、
40 蒸発源アセンブリ移送手段、
60、200 第1蒸発源、
70、300 第2蒸発源、
80 シールド(shield)、
90、100 角度調節支持台、
220、320 ノズル部、
221、321 貫通ホール。
Claims (4)
- 少なくとも一部が開口されたセルを少なくとも二つ以上備え、前記各セルの開口部の両側に位置して、被蒸着基板に向かうガイドを備えるシールドを含む外部ハウジングと、前記各セルの内部に位置するそれぞれの蒸発源と、を含め、
前記それぞれの蒸発源は前記セルの開口された方向と等しい一部が開口された貯蔵部と、
前記貯蔵部の開口された部分と繋がるボディーと前記ボディーを貫く貫通ホールとを備えるノズル部と、
前記ノズル部と前記貯蔵部とを囲む形態のハウジングと、
前記ハウジングと前記ノズル部との間に介在されている加熱部と、を備え、
前記ノズル部を成す貫通ホールは前記ハウジングの水平方向に対して所定の角度で傾き、
前記各セルの開口部の両側に位置する前記ガイドのうち、同じ側に位置する前記ガイドの先端と前記蒸発源とを結んだ延長線が同一地点に向かうことを特徴とする蒸発源アセンブリ。 - 前記それぞれのシールドのガイドはその延長線が同一地点に向かうように、少なくとも一つのガイドは所定の角度で傾いていることを特徴とする請求項1に記載の蒸発源アセンブリ。
- 前記蒸発源の内少なくとも一つの蒸発源は被蒸着基板の一面に薄膜を形成する蒸着物質を有し、他の少なくとも一つの蒸発源は前記薄膜に含ませるための前記蒸着物質とは異なる添加剤を有することを特徴とする請求項1または2に記載の蒸発源アセンブリ。
- 請求項1から3の蒸発源アセンブリを含むことを特徴とする蒸着装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0018834 | 2005-03-07 | ||
KR1020050018834A KR100623730B1 (ko) | 2005-03-07 | 2005-03-07 | 증발원 어셈블리 및 이를 구비한 증착 장치 |
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JP2005194444A Division JP4732036B2 (ja) | 2005-03-07 | 2005-07-01 | 蒸発源アセンブリ及びそれを用いた蒸着装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009197336A true JP2009197336A (ja) | 2009-09-03 |
JP5155941B2 JP5155941B2 (ja) | 2013-03-06 |
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JP2005194444A Active JP4732036B2 (ja) | 2005-03-07 | 2005-07-01 | 蒸発源アセンブリ及びそれを用いた蒸着装置 |
JP2009137662A Active JP5155941B2 (ja) | 2005-03-07 | 2009-06-08 | 蒸発源アセンブリ及びそれを用いた蒸着装置 |
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JP2005194444A Active JP4732036B2 (ja) | 2005-03-07 | 2005-07-01 | 蒸発源アセンブリ及びそれを用いた蒸着装置 |
Country Status (3)
Country | Link |
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JP (2) | JP4732036B2 (ja) |
KR (1) | KR100623730B1 (ja) |
CN (1) | CN1831185B (ja) |
Cited By (5)
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JP2012510568A (ja) * | 2008-12-03 | 2012-05-10 | ファースト ソーラー インコーポレイテッド | トップダウン式の材料堆積用システム及び方法 |
JP2012214834A (ja) * | 2011-03-31 | 2012-11-08 | Hitachi High-Technologies Corp | 真空蒸着装置および有機el表示装置の製造方法 |
CN105734495A (zh) * | 2014-12-26 | 2016-07-06 | 佳能特机株式会社 | 真空蒸镀装置 |
KR20170111778A (ko) * | 2016-03-29 | 2017-10-12 | 주식회사 선익시스템 | 열적 간섭을 억제시킨 복합증발장치 |
JP2018538430A (ja) * | 2016-05-10 | 2018-12-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積装置を操作する方法、蒸発した源材料を基板に堆積する方法、及び堆積装置 |
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JP4768584B2 (ja) * | 2006-11-16 | 2011-09-07 | 財団法人山形県産業技術振興機構 | 蒸発源およびこれを用いた真空蒸着装置 |
JP5046882B2 (ja) * | 2007-11-21 | 2012-10-10 | 三菱重工業株式会社 | インライン式成膜装置 |
JP4880647B2 (ja) * | 2008-07-01 | 2012-02-22 | 東京エレクトロン株式会社 | 有機elの成膜装置および蒸着装置 |
JP4831841B2 (ja) * | 2009-07-10 | 2011-12-07 | 三菱重工業株式会社 | 真空蒸着装置及び方法 |
JP5312697B2 (ja) * | 2011-01-18 | 2013-10-09 | シャープ株式会社 | 蒸着装置及び蒸着方法 |
KR101216530B1 (ko) * | 2011-04-18 | 2012-12-31 | (주)와이에스썸텍 | 선형 증발원을 이용한 증착 장치 |
JP5557817B2 (ja) * | 2011-09-30 | 2014-07-23 | 株式会社日立ハイテクノロジーズ | 蒸発源および成膜装置 |
KR101906358B1 (ko) * | 2012-02-21 | 2018-10-11 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조방법 |
JP6291696B2 (ja) * | 2014-07-28 | 2018-03-14 | 株式会社Joled | 蒸着装置および蒸発源 |
CN104404451A (zh) * | 2014-12-16 | 2015-03-11 | 合肥鑫晟光电科技有限公司 | 蒸镀源和蒸镀装置 |
KR102629005B1 (ko) * | 2016-03-29 | 2024-01-25 | 주식회사 선익시스템 | 다수 종류의 증착물질의 혼합비율을 보완하여 줄 수 있는 복합증발장치 |
JP2018003120A (ja) * | 2016-07-05 | 2018-01-11 | キヤノントッキ株式会社 | 蒸着装置及び蒸発源 |
CN106521423A (zh) * | 2016-11-28 | 2017-03-22 | 上海天马有机发光显示技术有限公司 | 一种真空蒸镀装置、方法及有机发光显示面板 |
CN107858652A (zh) * | 2017-12-09 | 2018-03-30 | 四川金英科技有限责任公司 | 一种线性蒸镀源装置 |
CN109666898A (zh) * | 2019-01-03 | 2019-04-23 | 福建华佳彩有限公司 | 一种用于点蒸发源的坩埚 |
WO2021052592A1 (en) * | 2019-09-19 | 2021-03-25 | Applied Materials, Inc. | Method of operating an evaporation source, evaporation system, and shield handling apparatus |
CN112831753A (zh) * | 2019-11-25 | 2021-05-25 | 合肥欣奕华智能机器有限公司 | 一种多重蒸发源遮挡机构及薄膜蒸镀设备 |
CN112742631B (zh) * | 2020-12-24 | 2021-12-28 | 厦门天马微电子有限公司 | 喷头组件、喷印装置及喷印方法 |
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- 2005-03-07 KR KR1020050018834A patent/KR100623730B1/ko active IP Right Grant
- 2005-07-01 CN CN2005100980369A patent/CN1831185B/zh active Active
- 2005-07-01 JP JP2005194444A patent/JP4732036B2/ja active Active
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- 2009-06-08 JP JP2009137662A patent/JP5155941B2/ja active Active
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012510568A (ja) * | 2008-12-03 | 2012-05-10 | ファースト ソーラー インコーポレイテッド | トップダウン式の材料堆積用システム及び方法 |
JP2012214834A (ja) * | 2011-03-31 | 2012-11-08 | Hitachi High-Technologies Corp | 真空蒸着装置および有機el表示装置の製造方法 |
CN105734495A (zh) * | 2014-12-26 | 2016-07-06 | 佳能特机株式会社 | 真空蒸镀装置 |
JP2016125091A (ja) * | 2014-12-26 | 2016-07-11 | キヤノントッキ株式会社 | 真空蒸着装置 |
CN105734495B (zh) * | 2014-12-26 | 2019-12-06 | 佳能特机株式会社 | 真空蒸镀装置 |
KR20170111778A (ko) * | 2016-03-29 | 2017-10-12 | 주식회사 선익시스템 | 열적 간섭을 억제시킨 복합증발장치 |
KR102567009B1 (ko) * | 2016-03-29 | 2023-08-14 | (주)선익시스템 | 열적 간섭을 억제시킨 복합증발장치 |
JP2018538430A (ja) * | 2016-05-10 | 2018-12-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積装置を操作する方法、蒸発した源材料を基板に堆積する方法、及び堆積装置 |
US10483465B2 (en) | 2016-05-10 | 2019-11-19 | Applied Materials, Inc. | Methods of operating a deposition apparatus, and deposition apparatus |
Also Published As
Publication number | Publication date |
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CN1831185A (zh) | 2006-09-13 |
KR100623730B1 (ko) | 2006-09-14 |
JP5155941B2 (ja) | 2013-03-06 |
JP2006249572A (ja) | 2006-09-21 |
CN1831185B (zh) | 2010-05-05 |
JP4732036B2 (ja) | 2011-07-27 |
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