CN1831185B - 蒸发源组件及使用该组件的蒸镀装置 - Google Patents

蒸发源组件及使用该组件的蒸镀装置 Download PDF

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Publication number
CN1831185B
CN1831185B CN2005100980369A CN200510098036A CN1831185B CN 1831185 B CN1831185 B CN 1831185B CN 2005100980369 A CN2005100980369 A CN 2005100980369A CN 200510098036 A CN200510098036 A CN 200510098036A CN 1831185 B CN1831185 B CN 1831185B
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Prior art keywords
evaporation
mentioned
evaporation source
substrate
nozzle portion
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Chinese (zh)
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CN1831185A (zh
Inventor
安宰弘
李星昊
赵源锡
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Samsung Display Co Ltd
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Samsung Mobile Display Co Ltd
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Publication of CN1831185A publication Critical patent/CN1831185A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN2005100980369A 2005-03-07 2005-07-01 蒸发源组件及使用该组件的蒸镀装置 Active CN1831185B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR18834/05 2005-03-07
KR1020050018834A KR100623730B1 (ko) 2005-03-07 2005-03-07 증발원 어셈블리 및 이를 구비한 증착 장치

Publications (2)

Publication Number Publication Date
CN1831185A CN1831185A (zh) 2006-09-13
CN1831185B true CN1831185B (zh) 2010-05-05

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CN2005100980369A Active CN1831185B (zh) 2005-03-07 2005-07-01 蒸发源组件及使用该组件的蒸镀装置

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JP (2) JP4732036B2 (ja)
KR (1) KR100623730B1 (ja)
CN (1) CN1831185B (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4768584B2 (ja) * 2006-11-16 2011-09-07 財団法人山形県産業技術振興機構 蒸発源およびこれを用いた真空蒸着装置
JP5046882B2 (ja) * 2007-11-21 2012-10-10 三菱重工業株式会社 インライン式成膜装置
JP4880647B2 (ja) * 2008-07-01 2012-02-22 東京エレクトロン株式会社 有機ｅｌの成膜装置および蒸着装置
US8628617B2 (en) * 2008-12-03 2014-01-14 First Solar, Inc. System and method for top-down material deposition
JP4831841B2 (ja) * 2009-07-10 2011-12-07 三菱重工業株式会社 真空蒸着装置及び方法
JP5312697B2 (ja) * 2011-01-18 2013-10-09 シャープ株式会社 蒸着装置及び蒸着方法
JP2012214834A (ja) * 2011-03-31 2012-11-08 Hitachi High-Technologies Corp 真空蒸着装置および有機ｅｌ表示装置の製造方法
KR101216530B1 (ko) * 2011-04-18 2012-12-31 (주)와이에스썸텍 선형 증발원을 이용한 증착 장치
JP5557817B2 (ja) * 2011-09-30 2014-07-23 株式会社日立ハイテクノロジーズ 蒸発源および成膜装置
KR101906358B1 (ko) * 2012-02-21 2018-10-11 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조방법
JP6291696B2 (ja) * 2014-07-28 2018-03-14 株式会社Ｊｏｌｅｄ 蒸着装置および蒸発源
CN104404451A (zh) * 2014-12-16 2015-03-11 合肥鑫晟光电科技有限公司 蒸镀源和蒸镀装置
JP6529257B2 (ja) * 2014-12-26 2019-06-12 キヤノントッキ株式会社 真空蒸着装置
KR102567009B1 (ko) * 2016-03-29 2023-08-14 (주)선익시스템 열적 간섭을 억제시킨 복합증발장치
KR102629005B1 (ko) * 2016-03-29 2024-01-25 주식회사 선익시스템 다수 종류의 증착물질의 혼합비율을 보완하여 줄 수 있는 복합증발장치
JP6815390B2 (ja) * 2016-05-10 2021-01-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積装置を操作する方法、蒸発した源材料を基板に堆積する方法、及び堆積装置
JP2018003120A (ja) * 2016-07-05 2018-01-11 キヤノントッキ株式会社 蒸着装置及び蒸発源
CN106521423A (zh) * 2016-11-28 2017-03-22 上海天马有机发光显示技术有限公司 一种真空蒸镀装置、方法及有机发光显示面板
CN107858652A (zh) * 2017-12-09 2018-03-30 四川金英科技有限责任公司 一种线性蒸镀源装置
CN109666898A (zh) * 2019-01-03 2019-04-23 福建华佳彩有限公司 一种用于点蒸发源的坩埚
WO2021052592A1 (en) * 2019-09-19 2021-03-25 Applied Materials, Inc. Method of operating an evaporation source, evaporation system, and shield handling apparatus
CN112831753A (zh) * 2019-11-25 2021-05-25 合肥欣奕华智能机器有限公司 一种多重蒸发源遮挡机构及薄膜蒸镀设备
CN112742631B (zh) * 2020-12-24 2021-12-28 厦门天马微电子有限公司 喷头组件、喷印装置及喷印方法
CN115094383B (zh) * 2022-07-01 2023-06-30 江阴纳力新材料科技有限公司 一种基于蒸镀的复合正极集流体制备装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1468972A (zh) * 2003-06-04 2004-01-21 深圳市创欧科技有限公司 用于制作有机电致发光显示器的蒸镀装置
CN2644433Y (zh) * 2003-07-15 2004-09-29 精碟科技股份有限公司 镀膜设备及镀膜设备用的遮板单元
CN1578847A (zh) * 2001-11-27 2005-02-09 日本电气株式会社 真空成膜装置及真空成膜方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
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JPS57158374A (en) 1981-03-24 1982-09-30 Mitsubishi Heavy Ind Ltd Plated steel strip by vapor deposition of pb-zn binary alloy and producing device thereof
KR100532657B1 (ko) * 2002-11-18 2005-12-02 주식회사 야스 다증발원을 이용한 동시증착에서 균일하게 혼합된 박막의증착을 위한 증발 영역조절장치
JP4493926B2 (ja) * 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置

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* Cited by examiner, † Cited by third party
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CN1578847A (zh) * 2001-11-27 2005-02-09 日本电气株式会社 真空成膜装置及真空成膜方法
CN1468972A (zh) * 2003-06-04 2004-01-21 深圳市创欧科技有限公司 用于制作有机电致发光显示器的蒸镀装置
CN2644433Y (zh) * 2003-07-15 2004-09-29 精碟科技股份有限公司 镀膜设备及镀膜设备用的遮板单元

Non-Patent Citations (5)

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JP昭60-116772A 1985.06.24
JP昭62-244122A 1987.10.24
JP昭63-11662A 1988.01.19
JP特开2003-193217A 2003.07.09
JP特开2004-68101A 2004.03.04

Also Published As

Publication number Publication date
JP4732036B2 (ja) 2011-07-27
JP2006249572A (ja) 2006-09-21
KR100623730B1 (ko) 2006-09-14
JP2009197336A (ja) 2009-09-03
JP5155941B2 (ja) 2013-03-06
CN1831185A (zh) 2006-09-13

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Effective date of registration: 20090109

Address after: Gyeonggi Do, South Korea

Applicant after: Samsung Mobile Display Co., Ltd.

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Effective date: 20121024

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Patentee before: Samsung Mobile Display Co., Ltd.