JP2009191340A - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
JP2009191340A
JP2009191340A JP2008035643A JP2008035643A JP2009191340A JP 2009191340 A JP2009191340 A JP 2009191340A JP 2008035643 A JP2008035643 A JP 2008035643A JP 2008035643 A JP2008035643 A JP 2008035643A JP 2009191340 A JP2009191340 A JP 2009191340A
Authority
JP
Japan
Prior art keywords
metal target
film forming
frame member
metal
forming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008035643A
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English (en)
Japanese (ja)
Other versions
JP2009191340A5 (enExample
Inventor
Takeshi Miyashita
武 宮下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2008035643A priority Critical patent/JP2009191340A/ja
Priority to US12/364,545 priority patent/US20090205950A1/en
Publication of JP2009191340A publication Critical patent/JP2009191340A/ja
Publication of JP2009191340A5 publication Critical patent/JP2009191340A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2008035643A 2008-02-18 2008-02-18 成膜装置及び成膜方法 Withdrawn JP2009191340A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008035643A JP2009191340A (ja) 2008-02-18 2008-02-18 成膜装置及び成膜方法
US12/364,545 US20090205950A1 (en) 2008-02-18 2009-02-03 Film deposition apparatus and film deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008035643A JP2009191340A (ja) 2008-02-18 2008-02-18 成膜装置及び成膜方法

Publications (2)

Publication Number Publication Date
JP2009191340A true JP2009191340A (ja) 2009-08-27
JP2009191340A5 JP2009191340A5 (enExample) 2011-03-17

Family

ID=40954106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008035643A Withdrawn JP2009191340A (ja) 2008-02-18 2008-02-18 成膜装置及び成膜方法

Country Status (2)

Country Link
US (1) US20090205950A1 (enExample)
JP (1) JP2009191340A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011148488A1 (ja) * 2010-05-27 2011-12-01 株式会社ナチュラテクノロジー ナチュラトロンスパッタ装置
JP7150364B1 (ja) 2021-09-27 2022-10-11 株式会社アドバンスト・スパッタテック スパッタリング成膜源および成膜装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130035256A (ko) * 2010-06-03 2013-04-08 울박, 인크 스퍼터 성막 장치
WO2011152481A1 (ja) * 2010-06-03 2011-12-08 株式会社アルバック スパッタ成膜装置
CN103469165B (zh) * 2013-10-10 2016-06-08 黄志宏 基于分布式电磁铁的矩形平面阴极电弧靶

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63466A (ja) * 1986-06-18 1988-01-05 Matsushita Electric Ind Co Ltd スパツタリングタ−ゲツト
JPH02236277A (ja) * 1989-03-09 1990-09-19 Fujitsu Ltd スパッタリング方法
JPH02305960A (ja) * 1989-05-18 1990-12-19 Sony Corp 反応性マグネトロンスパッタ装置
JPH0375366A (ja) * 1989-08-17 1991-03-29 Mitsubishi Kasei Corp スパッタリングターゲット
JPH0397846A (ja) * 1989-09-07 1991-04-23 Kao Corp ケイ素化合物薄膜の形成方法
JPH03100173A (ja) * 1989-09-14 1991-04-25 Mitsubishi Kasei Corp Ｄｃマグネトロン型反応性スパッタリング装置
JPH07243039A (ja) * 1994-03-02 1995-09-19 Chugai Ro Co Ltd 直流マグネトロン型反応性スパッタ法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622122A (en) * 1986-02-24 1986-11-11 Oerlikon Buhrle U.S.A. Inc. Planar magnetron cathode target assembly
US5922176A (en) * 1992-06-12 1999-07-13 Donnelly Corporation Spark eliminating sputtering target and method for using and making same
US5637199A (en) * 1992-06-26 1997-06-10 Minnesota Mining And Manufacturing Company Sputtering shields and method of manufacture

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63466A (ja) * 1986-06-18 1988-01-05 Matsushita Electric Ind Co Ltd スパツタリングタ−ゲツト
JPH02236277A (ja) * 1989-03-09 1990-09-19 Fujitsu Ltd スパッタリング方法
JPH02305960A (ja) * 1989-05-18 1990-12-19 Sony Corp 反応性マグネトロンスパッタ装置
JPH0375366A (ja) * 1989-08-17 1991-03-29 Mitsubishi Kasei Corp スパッタリングターゲット
JPH0397846A (ja) * 1989-09-07 1991-04-23 Kao Corp ケイ素化合物薄膜の形成方法
JPH03100173A (ja) * 1989-09-14 1991-04-25 Mitsubishi Kasei Corp Ｄｃマグネトロン型反応性スパッタリング装置
JPH07243039A (ja) * 1994-03-02 1995-09-19 Chugai Ro Co Ltd 直流マグネトロン型反応性スパッタ法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011148488A1 (ja) * 2010-05-27 2011-12-01 株式会社ナチュラテクノロジー ナチュラトロンスパッタ装置
JP7150364B1 (ja) 2021-09-27 2022-10-11 株式会社アドバンスト・スパッタテック スパッタリング成膜源および成膜装置
WO2023047995A1 (ja) * 2021-09-27 2023-03-30 株式会社アドバンスト・スパッタテック スパッタリング成膜源および成膜装置
JP2023047435A (ja) * 2021-09-27 2023-04-06 株式会社アドバンスト・スパッタテック スパッタリング成膜源および成膜装置

Also Published As

Publication number Publication date
US20090205950A1 (en) 2009-08-20

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