JP2009170896A5 - - Google Patents

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Publication number
JP2009170896A5
JP2009170896A5 JP2008319214A JP2008319214A JP2009170896A5 JP 2009170896 A5 JP2009170896 A5 JP 2009170896A5 JP 2008319214 A JP2008319214 A JP 2008319214A JP 2008319214 A JP2008319214 A JP 2008319214A JP 2009170896 A5 JP2009170896 A5 JP 2009170896A5
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JP
Japan
Prior art keywords
film
semiconductor device
gate electrode
semiconductor film
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008319214A
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English (en)
Japanese (ja)
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JP5496500B2 (ja
JP2009170896A (ja
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Publication date
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Priority to JP2008319214A priority Critical patent/JP5496500B2/ja
Priority claimed from JP2008319214A external-priority patent/JP5496500B2/ja
Publication of JP2009170896A publication Critical patent/JP2009170896A/ja
Publication of JP2009170896A5 publication Critical patent/JP2009170896A5/ja
Application granted granted Critical
Publication of JP5496500B2 publication Critical patent/JP5496500B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008319214A 2007-12-18 2008-12-16 半導体装置の作製方法 Expired - Fee Related JP5496500B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008319214A JP5496500B2 (ja) 2007-12-18 2008-12-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007325708 2007-12-18
JP2007325708 2007-12-18
JP2008319214A JP5496500B2 (ja) 2007-12-18 2008-12-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009170896A JP2009170896A (ja) 2009-07-30
JP2009170896A5 true JP2009170896A5 (ko) 2012-02-02
JP5496500B2 JP5496500B2 (ja) 2014-05-21

Family

ID=40971687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008319214A Expired - Fee Related JP5496500B2 (ja) 2007-12-18 2008-12-16 半導体装置の作製方法

Country Status (1)

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JP (1) JP5496500B2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI584251B (zh) * 2009-09-10 2017-05-21 半導體能源研究所股份有限公司 半導體裝置和顯示裝置
JP5683179B2 (ja) * 2009-09-24 2015-03-11 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI575751B (zh) * 2011-06-16 2017-03-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2013051644A1 (ja) * 2011-10-07 2013-04-11 住友電気工業株式会社 絶縁膜およびその製造方法
JP6046351B2 (ja) * 2012-01-19 2016-12-14 日新電機株式会社 絶縁膜およびその製造方法
US8969130B2 (en) * 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
CN104409509A (zh) * 2014-10-20 2015-03-11 深圳市华星光电技术有限公司 薄膜晶体管
WO2019027645A1 (en) * 2017-08-04 2019-02-07 The Government Of The United States Of America, As Represented By The Secretary Of The Navy MONO- AND MULTI-LAYER SILICENE PREPARED BY PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3006190B2 (ja) * 1991-07-26 2000-02-07 株式会社島津製作所 真空成膜方法
JPH10163502A (ja) * 1996-12-03 1998-06-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2001077112A (ja) * 1999-07-07 2001-03-23 Matsushita Electric Ind Co Ltd 積層体，積層体の製造方法及び半導体素子
JP2001217424A (ja) * 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタおよびそれを用いた液晶表示装置
JP2002319678A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 薄膜型半導体装置及びその製造方法
JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
JP2005167051A (ja) * 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法

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