JP2009170896A5 - - Google Patents

Claims (11)

An insulating surface on the substrate;
A gate electrode on the insulating surface;
A gate insulating film made of an insulating film having a crystal structure of zirconium oxide on the gate electrode;
Before having on Kige over gate insulating film, and the island-shaped region of the microcrystalline semiconductor film, and
The island-shaped region of the microcrystalline semiconductor film partially or entirely overlaps with the gate electrode, and the island-shaped region of the microcrystalline semiconductor film includes a channel formation region of a thin film transistor and a source region containing one conductivity type impurity. And a drain region. In claim 1,
The semiconductor device, wherein the insulating film having a crystal structure of zirconium oxide is yttrium-stabilized zirconia. In claim 1 or 2,
The semiconductor device, wherein the insulating film having a crystal structure of zirconium oxide is zirconium oxide. In any one of claims 1 to 3,
A semiconductor device comprising an insulating layer made of one selected from silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide in contact with the gate electrode. In any one of Claims 1 thru | or 4,
The island-shaped region of the microcrystalline semiconductor film includes germanium. In any one of Claims 1 thru | or 5,
A method for manufacturing a semiconductor device, comprising an amorphous semiconductor film in contact with an island-shaped region of the microcrystalline semiconductor film. Forming a gate electrode over a substrate having an insulating surface;
Forming an insulating film having a crystal structure of zirconium oxide on the gate electrode;
A microcrystalline semiconductor film is formed on the insulating film having a crystal structure of the zirconium oxide by a chemical vapor deposition method, and the microcrystalline semiconductor film is selected so as to partially or entirely overlap with the gate electrode. Etching to form an island region of a microcrystalline semiconductor film over the gate insulating film,
A method for manufacturing a semiconductor device, wherein a source region and a drain region containing an impurity of one conductivity type are formed so that a channel formation region of a thin film transistor is included in an island-shaped region of the microcrystalline semiconductor film. In claim 7,
A semiconductor device characterized in that the surface of the insulating film having a crystal structure of the zirconium oxide is subjected to plasma treatment using one selected from H ₂ , O ₂ , Ar, N ₂ , or a combination thereof. Manufacturing method. In claim 8,
The method for manufacturing a semiconductor device, wherein the plasma treatment is reverse sputtering treatment. In any one of Claims 7 to 9,
A method for manufacturing a semiconductor device, wherein an amorphous semiconductor film is formed over the microcrystalline semiconductor film. In any one of Claims 7 to 10,
A method for manufacturing a semiconductor device, comprising forming an insulating layer formed of one selected from silicon oxide, silicon nitride, silicon oxynitride, and silicon nitride oxide in contact with the gate electrode.