JP2009158751A - 素子搭載用基板およびその製造方法、半導体モジュールおよびその製造方法、ならびに携帯機器 - Google Patents

素子搭載用基板およびその製造方法、半導体モジュールおよびその製造方法、ならびに携帯機器 Download PDF

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Publication number
JP2009158751A
JP2009158751A JP2007335819A JP2007335819A JP2009158751A JP 2009158751 A JP2009158751 A JP 2009158751A JP 2007335819 A JP2007335819 A JP 2007335819A JP 2007335819 A JP2007335819 A JP 2007335819A JP 2009158751 A JP2009158751 A JP 2009158751A
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JP
Japan
Prior art keywords
protruding
electrode
insulating resin
resin layer
protruding electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007335819A
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English (en)
Japanese (ja)
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JP2009158751A5 (enExample
Inventor
Koichi Saito
浩一 齋藤
Yoshihisa Okayama
芳央 岡山
Hiroshi Takano
洋 高野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2007335819A priority Critical patent/JP2009158751A/ja
Priority to CN200810191061.5A priority patent/CN101494213A/zh
Priority to US12/345,019 priority patent/US20090168391A1/en
Publication of JP2009158751A publication Critical patent/JP2009158751A/ja
Publication of JP2009158751A5 publication Critical patent/JP2009158751A5/ja
Priority to US12/900,175 priority patent/US8438724B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/116—Manufacturing methods by patterning a pre-deposited material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

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  • Wire Bonding (AREA)
JP2007335819A 2007-12-27 2007-12-27 素子搭載用基板およびその製造方法、半導体モジュールおよびその製造方法、ならびに携帯機器 Pending JP2009158751A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007335819A JP2009158751A (ja) 2007-12-27 2007-12-27 素子搭載用基板およびその製造方法、半導体モジュールおよびその製造方法、ならびに携帯機器
CN200810191061.5A CN101494213A (zh) 2007-12-27 2008-12-26 元件安装用基板、半导体组件及其制造方法及便携式设备
US12/345,019 US20090168391A1 (en) 2007-12-27 2008-12-29 Substrate for mounting device and method for producing the same, semiconductor module and method for producing the same, and portable apparatus provided with the same
US12/900,175 US8438724B2 (en) 2007-12-27 2010-10-07 Method for producing substrate for mounting device and method for producing a semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007335819A JP2009158751A (ja) 2007-12-27 2007-12-27 素子搭載用基板およびその製造方法、半導体モジュールおよびその製造方法、ならびに携帯機器

Publications (2)

Publication Number Publication Date
JP2009158751A true JP2009158751A (ja) 2009-07-16
JP2009158751A5 JP2009158751A5 (enExample) 2010-05-13

Family

ID=40924721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007335819A Pending JP2009158751A (ja) 2007-12-27 2007-12-27 素子搭載用基板およびその製造方法、半導体モジュールおよびその製造方法、ならびに携帯機器

Country Status (2)

Country Link
JP (1) JP2009158751A (enExample)
CN (1) CN101494213A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087229A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 半導体モジュール、半導体モジュールの製造方法および携帯機器

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8592957B2 (en) * 2009-08-18 2013-11-26 Nec Corporation Semiconductor device having shield layer and chip-side power supply terminal capacitively coupled therein

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247483A (ja) * 2003-02-13 2004-09-02 Fujitsu Ltd 回路基板の製造方法
JP2004349361A (ja) * 2003-05-21 2004-12-09 Casio Comput Co Ltd 半導体装置およびその製造方法
JP2005197532A (ja) * 2004-01-08 2005-07-21 Nippon Mektron Ltd 多層回路基板およびその製造方法ならびに回路基材
JP2007059529A (ja) * 2005-08-23 2007-03-08 Nippon Mektron Ltd 回路基板の製造方法
JP2007123798A (ja) * 2005-09-28 2007-05-17 Kyocera Corp 配線基板および電子装置
WO2007063954A1 (ja) * 2005-11-30 2007-06-07 Sanyo Electric Co., Ltd. 回路装置および回路装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004247483A (ja) * 2003-02-13 2004-09-02 Fujitsu Ltd 回路基板の製造方法
JP2004349361A (ja) * 2003-05-21 2004-12-09 Casio Comput Co Ltd 半導体装置およびその製造方法
JP2005197532A (ja) * 2004-01-08 2005-07-21 Nippon Mektron Ltd 多層回路基板およびその製造方法ならびに回路基材
JP2007059529A (ja) * 2005-08-23 2007-03-08 Nippon Mektron Ltd 回路基板の製造方法
JP2007123798A (ja) * 2005-09-28 2007-05-17 Kyocera Corp 配線基板および電子装置
WO2007063954A1 (ja) * 2005-11-30 2007-06-07 Sanyo Electric Co., Ltd. 回路装置および回路装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087229A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 半導体モジュール、半導体モジュールの製造方法および携帯機器

Also Published As

Publication number Publication date
CN101494213A (zh) 2009-07-29

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