JP2009147194A5 - - Google Patents

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Publication number
JP2009147194A5
JP2009147194A5 JP2007324408A JP2007324408A JP2009147194A5 JP 2009147194 A5 JP2009147194 A5 JP 2009147194A5 JP 2007324408 A JP2007324408 A JP 2007324408A JP 2007324408 A JP2007324408 A JP 2007324408A JP 2009147194 A5 JP2009147194 A5 JP 2009147194A5
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JP
Japan
Prior art keywords
fin
gate electrode
type transistor
semiconductor
transistor according
Prior art date
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Application number
JP2007324408A
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English (en)
Japanese (ja)
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JP2009147194A (ja
JP5193583B2 (ja
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Publication date
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Priority to JP2007324408A priority Critical patent/JP5193583B2/ja
Priority claimed from JP2007324408A external-priority patent/JP5193583B2/ja
Priority to US12/335,701 priority patent/US7989856B2/en
Publication of JP2009147194A publication Critical patent/JP2009147194A/ja
Publication of JP2009147194A5 publication Critical patent/JP2009147194A5/ja
Application granted granted Critical
Publication of JP5193583B2 publication Critical patent/JP5193583B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007324408A 2007-12-17 2007-12-17 フィン型トランジスタ Active JP5193583B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007324408A JP5193583B2 (ja) 2007-12-17 2007-12-17 フィン型トランジスタ
US12/335,701 US7989856B2 (en) 2007-12-17 2008-12-16 Fin transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007324408A JP5193583B2 (ja) 2007-12-17 2007-12-17 フィン型トランジスタ

Publications (3)

Publication Number Publication Date
JP2009147194A JP2009147194A (ja) 2009-07-02
JP2009147194A5 true JP2009147194A5 (enExample) 2010-04-30
JP5193583B2 JP5193583B2 (ja) 2013-05-08

Family

ID=40752058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007324408A Active JP5193583B2 (ja) 2007-12-17 2007-12-17 フィン型トランジスタ

Country Status (2)

Country Link
US (1) US7989856B2 (enExample)
JP (1) JP5193583B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519481B2 (en) 2009-10-14 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
US9112052B2 (en) 2009-10-14 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
JP5452211B2 (ja) * 2009-12-21 2014-03-26 ルネサスエレクトロニクス株式会社 半導体装置、および、半導体装置の製造方法
JP2011258776A (ja) 2010-06-09 2011-12-22 Toshiba Corp 不揮発性半導体メモリ
CN102315269B (zh) 2010-07-01 2013-12-25 中国科学院微电子研究所 一种半导体器件及其形成方法
JP5569243B2 (ja) * 2010-08-09 2014-08-13 ソニー株式会社 半導体装置及びその製造方法
JP5713837B2 (ja) 2011-08-10 2015-05-07 株式会社東芝 半導体装置の製造方法
US8643120B2 (en) * 2012-01-06 2014-02-04 International Business Machines Corporation FinFET with fully silicided gate
US8759184B2 (en) * 2012-01-09 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and the methods for forming the same
US20130200455A1 (en) 2012-02-08 2013-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Dislocation smt for finfet device
JP5580355B2 (ja) 2012-03-12 2014-08-27 株式会社東芝 半導体装置
US8872284B2 (en) * 2012-03-20 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with metal gate stressor
US8921218B2 (en) * 2012-05-18 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate finFET device and method of fabricating thereof
US9397217B2 (en) 2012-12-28 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of non-planar semiconductor device
US9034716B2 (en) * 2013-01-31 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US8828818B1 (en) 2013-03-13 2014-09-09 Samsung Electronics Co., Ltd. Methods of fabricating integrated circuit device with fin transistors having different threshold voltages
US8796666B1 (en) * 2013-04-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with strain buffer layer and methods of forming the same
KR102044468B1 (ko) * 2013-05-13 2019-11-15 에스케이하이닉스 주식회사 반도체 소자 및 그 형성 방법
US9246005B2 (en) 2014-02-12 2016-01-26 International Business Machines Corporation Stressed channel bulk fin field effect transistor
US9590105B2 (en) * 2014-04-07 2017-03-07 National Chiao-Tung University Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof
US20160035891A1 (en) * 2014-07-31 2016-02-04 Qualcomm Incorporated Stress in n-channel field effect transistors
KR20170095195A (ko) 2014-12-17 2017-08-22 인텔 코포레이션 높은 이동도 채널 디바이스들을 위한 캐리어 구속
US9537007B2 (en) * 2015-04-07 2017-01-03 Qualcomm Incorporated FinFET with cut gate stressor
US9577036B1 (en) * 2015-11-12 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET isolation structure and method for fabricating the same
US10043888B2 (en) * 2016-12-27 2018-08-07 United Microelectronics Corp. Method for forming a semiconductor structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762448B1 (en) * 2003-04-03 2004-07-13 Advanced Micro Devices, Inc. FinFET device with multiple fin structures
JP4290038B2 (ja) * 2004-03-03 2009-07-01 キヤノン株式会社 半導体装置及びトランジスタ並びに半導体装置の製造方法
US7224033B2 (en) * 2005-02-15 2007-05-29 International Business Machines Corporation Structure and method for manufacturing strained FINFET
JP2006351975A (ja) * 2005-06-20 2006-12-28 Renesas Technology Corp 半導体装置およびその製造方法
US7655511B2 (en) * 2005-11-03 2010-02-02 International Business Machines Corporation Gate electrode stress control for finFET performance enhancement
KR100763330B1 (ko) * 2005-12-14 2007-10-04 삼성전자주식회사 활성 핀들을 정의하는 소자분리 방법, 이를 이용하는반도체소자의 제조방법 및 이에 의해 제조된 반도체소자
JP2007207837A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2007258485A (ja) * 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法
JP4960007B2 (ja) * 2006-04-26 2012-06-27 株式会社東芝 半導体装置及び半導体装置の製造方法

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