JP5193583B2 - フィン型トランジスタ - Google Patents

フィン型トランジスタ Download PDF

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Publication number
JP5193583B2
JP5193583B2 JP2007324408A JP2007324408A JP5193583B2 JP 5193583 B2 JP5193583 B2 JP 5193583B2 JP 2007324408 A JP2007324408 A JP 2007324408A JP 2007324408 A JP2007324408 A JP 2007324408A JP 5193583 B2 JP5193583 B2 JP 5193583B2
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Japan
Prior art keywords
gate electrode
fin
insulating layer
finfet
type transistor
Prior art date
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Application number
JP2007324408A
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English (en)
Japanese (ja)
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JP2009147194A5 (enExample
JP2009147194A (ja
Inventor
正和 後藤
伸俊 青木
貴士 泉田
王俊 岡野
聡 稲葉
一郎 水島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007324408A priority Critical patent/JP5193583B2/ja
Priority to US12/335,701 priority patent/US7989856B2/en
Publication of JP2009147194A publication Critical patent/JP2009147194A/ja
Publication of JP2009147194A5 publication Critical patent/JP2009147194A5/ja
Application granted granted Critical
Publication of JP5193583B2 publication Critical patent/JP5193583B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/794—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising conductive materials, e.g. silicided source, drain or gate electrodes

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2007324408A 2007-12-17 2007-12-17 フィン型トランジスタ Active JP5193583B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007324408A JP5193583B2 (ja) 2007-12-17 2007-12-17 フィン型トランジスタ
US12/335,701 US7989856B2 (en) 2007-12-17 2008-12-16 Fin transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007324408A JP5193583B2 (ja) 2007-12-17 2007-12-17 フィン型トランジスタ

Publications (3)

Publication Number Publication Date
JP2009147194A JP2009147194A (ja) 2009-07-02
JP2009147194A5 JP2009147194A5 (enExample) 2010-04-30
JP5193583B2 true JP5193583B2 (ja) 2013-05-08

Family

ID=40752058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007324408A Active JP5193583B2 (ja) 2007-12-17 2007-12-17 フィン型トランジスタ

Country Status (2)

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US (1) US7989856B2 (enExample)
JP (1) JP5193583B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519481B2 (en) 2009-10-14 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
US9112052B2 (en) 2009-10-14 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Voids in STI regions for forming bulk FinFETs
JP5452211B2 (ja) * 2009-12-21 2014-03-26 ルネサスエレクトロニクス株式会社 半導体装置、および、半導体装置の製造方法
JP2011258776A (ja) 2010-06-09 2011-12-22 Toshiba Corp 不揮発性半導体メモリ
CN102315269B (zh) 2010-07-01 2013-12-25 中国科学院微电子研究所 一种半导体器件及其形成方法
JP5569243B2 (ja) * 2010-08-09 2014-08-13 ソニー株式会社 半導体装置及びその製造方法
JP5713837B2 (ja) 2011-08-10 2015-05-07 株式会社東芝 半導体装置の製造方法
US8643120B2 (en) * 2012-01-06 2014-02-04 International Business Machines Corporation FinFET with fully silicided gate
US8759184B2 (en) * 2012-01-09 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and the methods for forming the same
US20130200455A1 (en) * 2012-02-08 2013-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Dislocation smt for finfet device
JP5580355B2 (ja) 2012-03-12 2014-08-27 株式会社東芝 半導体装置
US8872284B2 (en) * 2012-03-20 2014-10-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with metal gate stressor
US8921218B2 (en) * 2012-05-18 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Metal gate finFET device and method of fabricating thereof
US9397217B2 (en) 2012-12-28 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structure of non-planar semiconductor device
US9034716B2 (en) * 2013-01-31 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US8828818B1 (en) 2013-03-13 2014-09-09 Samsung Electronics Co., Ltd. Methods of fabricating integrated circuit device with fin transistors having different threshold voltages
US8796666B1 (en) * 2013-04-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with strain buffer layer and methods of forming the same
KR102044468B1 (ko) * 2013-05-13 2019-11-15 에스케이하이닉스 주식회사 반도체 소자 및 그 형성 방법
US9246005B2 (en) 2014-02-12 2016-01-26 International Business Machines Corporation Stressed channel bulk fin field effect transistor
US9590105B2 (en) * 2014-04-07 2017-03-07 National Chiao-Tung University Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof
US20160035891A1 (en) * 2014-07-31 2016-02-04 Qualcomm Incorporated Stress in n-channel field effect transistors
US10243078B2 (en) 2014-12-17 2019-03-26 Intel Corporation Carrier confinement for high mobility channel devices
US9537007B2 (en) 2015-04-07 2017-01-03 Qualcomm Incorporated FinFET with cut gate stressor
US9577036B1 (en) * 2015-11-12 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET isolation structure and method for fabricating the same
US10043888B2 (en) * 2016-12-27 2018-08-07 United Microelectronics Corp. Method for forming a semiconductor structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762448B1 (en) * 2003-04-03 2004-07-13 Advanced Micro Devices, Inc. FinFET device with multiple fin structures
JP4290038B2 (ja) * 2004-03-03 2009-07-01 キヤノン株式会社 半導体装置及びトランジスタ並びに半導体装置の製造方法
US7224033B2 (en) * 2005-02-15 2007-05-29 International Business Machines Corporation Structure and method for manufacturing strained FINFET
JP2006351975A (ja) * 2005-06-20 2006-12-28 Renesas Technology Corp 半導体装置およびその製造方法
US7655511B2 (en) * 2005-11-03 2010-02-02 International Business Machines Corporation Gate electrode stress control for finFET performance enhancement
KR100763330B1 (ko) * 2005-12-14 2007-10-04 삼성전자주식회사 활성 핀들을 정의하는 소자분리 방법, 이를 이용하는반도체소자의 제조방법 및 이에 의해 제조된 반도체소자
JP2007207837A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2007258485A (ja) * 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法
JP4960007B2 (ja) * 2006-04-26 2012-06-27 株式会社東芝 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
US7989856B2 (en) 2011-08-02
US20090152623A1 (en) 2009-06-18
JP2009147194A (ja) 2009-07-02

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